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HI-SINCERITY
MICROELECTRONICS CORP.
HBC807
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC807 is designed for switching and AF amplifier amplification
suitable for driver stages and low power output stages.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e.......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCES Collector to Base Voltage........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -45 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -800 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCEO -45 - - V IC=-10mA
BVCES -50 - - V IC=-100uA
BVEBO -5 - - V IE=-100uA
ICES - - -100 nA VCE=-25V
IEBO - - -100 nA VEB=-4V
*VCE(sat) - - -700 mV IC=-500mA, IB=-50mA
VBE(on) - - -1.2 V VCE=-1V, IC=-300mA
*hFE 100 - 630 VCE=-1V, IC=-100mA
fT - 100 - MHz VCE=-5V, IC=-10mA, f=100MHz
Cob - - 12 pF VCB=-10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
SOT-23
Classification Of hFE
Rank 9FA(16) 9FB(25) 9FC(40)
hFE 100-250 160-400 250-630
HBC807 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 2/3
1000
Curr ent Gain & Coll e c tor Current
VCE=1V
100
hFE
10
0.1 1 10 100 1000
10000
Colle cto r Curren t (mA)
On Voltage & Col l e ctor Cu r r ent
1000
100
Saturation Voltage (mV)
10
1 10 100 1000
1000
Saturation Voltage & Coll ector Curren t
V
@ IC=10IB
CE(sat)
Collector Current (mA)
Cutoff Frequency & Coll ector Cu rrent
VCE=5V
1000
On Voltage (mV)
100
100
10
Capacitance (pF)
V
BE(on)
@ VCE=1V
0.1 1 10 100 1000
Collector Current (mA)
Capacitan ce & R e verse- Biased Voltage
Cob
100
Cutoff Frequency (MHz)
10
1 10 100 1000
10
1
PT=100ms
0.1
Collector Current-IC (mA)
0.01
PT=1s
Colle cto r Curren t (mA)
Safe Oper a t ing Area
PT=1ms
1
0.1 1 10 100
Reverse Biased Voltage (V)
0.001
110100
Forward Voltage Vce (V)
HBC807 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 3/3
A
L
3
B
S
21
GV
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
9 F
Rank Code
Control Code
C
JK
DIM
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Min. Max. Min. Max.
DIM
D
H
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Marking:
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness in cludes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBC807 HSMC Product Specification
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