Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6418-C
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 1/4
HBC547
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC547 is designed for use in driver stage of audio amplifier.
Features
High Breakdown Voltage: 45V
•
High DC Current Gain: 110-800 at IC=2mA
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 50 V
VCEO Collector to Emitter Voltage ..................................................................................... 45 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ....................................................................................................... 100mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 50 - - V IC=100uA, IE=0
BVCEO 45 - - V IC= 1mA, IB= 0
BVEBO 6 - - V IE=10uA, IC=0
ICBO - - 15 nA VCB=30V, IE=0
VBE(on)1 0.58 - 0.7 V IC=2mA, VC E=5V
VBE(on)2 - - 0.77 V IC=10mA, VCE=5V
*VBE(sat)1 - 0.7 - V IC=10mA, IB=0.5mA
*VBE(sat)2 - 0.9 - V IC=100mA, IB=5mA
*VCE(sat)1 - - 0.25 V IC=10mA, IB=0.5mA
*VCE(sat)2 - - 0.6 V IC=100mA, IB=5mA
*hFE 110 - 800 VCE=5V, IC=2mA
fT - 300 - MHZ VCE=5V, IC=10mA, f=100MHz
Cob - - 4.5 Pf VCE=10V, IE=0, f=1MHZ
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE
Rank A B C
Range 110-220 200-450 420-800
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6418-C
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 2/4
1000
hFE @ VCE=5V
100
hFE
10
0.1 1 10 100 1000
Collector Current (mA)
On Voltage & Collector Current
10000
Current Gain & Collector Current
10000
Satur ation Vol tage & Collector Current
1000
BE(sat)
V
100
Saturation Voltage (mV)
10
0.1 1 10 100 1000
10
Capacitance & Reverse- Biased Voltage
Collector Current (mA)
@ IC=20I
B
CE(sat)
V
@ IC=20I
B
1000
BE(on)
V
On Voltage (mV)
100
0 1 10 100 1000
1000
100
Cutoff Frequency (MHz)
Cutoff Frequency & Collector Current
Collector Current (mA)
@ VCE=5V
VCE=5V
Cob
Capacitance (pF)
1
0.1 1 10 100
Reverse- Biased Vol t a ge ( V)
Safe Operating Area
10000
PT=1ms
PT=100ms
PT=1s
(mA)
C
Collector Current-I
1000
100
10
10
1 10 100
Collector Curren t ( m A )
1
1 10 100
Forwar d Voltage- VCE (V)
HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6418-C
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 3/4
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
0
0 20 40 60 80 100 120 140 160
Ambient Tem per ature-T a(oC)
PD-Ta
HSMC Product Specification
Page 4
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6418-C
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 4/4
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Collector 2.Base 3.Emitter
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches M illimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
1
α
2
α
3
α
-
-
-
*5
*2
*2
°
°
°
-
-
-
*:Typical
*5
°
*2
°
*2
°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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