
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6446-B
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 1/4
HBC237
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC237 is primarily intended for in driver stage of audio
amplifiers.
Features
High Breakdown Voltage: 45V at IC=2mA
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 400 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCES Collector to Emitter Voltage...................................................................................... 50 V
VCEO Collector to Emitter Voltage ..................................................................................... 45 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ...................................................................................................... 100 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCES 50 - - V IC=100uA, VEB=0
BVCEO 45 - - V IC=2mA, IB=0
BVEBO 6 - - V IE=100uA, IC=0
ICES - - 15 nA VCB=50V, IE=0
IEBO - - 100 nA VEB=4V, IC=0
VBE(on) 550 - 700 mV IC=2mA, VCE=5V
*VCE(sat)1 - - 200 mV IC=10mA, IB=0.5mA
*VCE(sat)2 - - 600 mV IC=100mA, IB=5mA
*VBE(sat)1 - - 1.05 V IC=100mA, IB=5mA
*VBE(sat)2 - - 830 mV IC=10mA, IB=0.5mA
*hFE1 50 - - VCE=5V, IC=10uA
*hFE2 120 - 800 VCE=5V, IC=2mA
*hFE3 60 - - VCE=5V, IC=100mA
fT 150 - - MHz VCE=5V, IC=10mA, f=100MHz
Cob - - 4.5 PF VCB=10V, IE=0, f=1MHz
(Ta=25°C,
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
)
Classification of hFE2
Rank A B C
Range 120-220 180-460 300-800
HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6446-B
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 2/4
1000
100
hFE
10
1 10 100 1000
Current Gain & Collector Current
VCE=5V
Collector Current (mA)
On Voltage & Collector Current
10
100
Saturation Voltage (mV)
0.1
0.01
1000
100
10
1
Saturation Voltage & Collector Current
BE(sat)
V
1 10 100 1000 10000
Collector Current (mA)
@ IC=10I
B
VCE(sat)
@ IC=10I
Cut off Fr equen cy & Col lector Current
VCE=5V
B
1
On Voltage (mV)
0.1
1 10 100 1000
BE(on)
V
@ VCE=5V
Collector Current (mA)
Capacit ance & Reverse- Bia sed Voltage
10
Capacitance (Pf)
Cob
10
Cutoff Frequency (MHz)
1
1 10 100
10
1
0.1
Collector Current (mA)
Collector Current (mA)
Sa fe Opera ti ng Area
PT=1ms
PT=100ms
PT=1s
1
1 10 100
Reverse Biased Vol tage (V)
0.01
1 10 100
Forwar d Voltage ( V)
HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6446-B
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 3/4
450
400
350
300
250
200
150
Power Dissipation-PD(mW)
100
50
0
0 50 100 150 200
Ambient Tem p er at ure-Ta(oC)
PD-Ta
HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6446-B
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 4/4
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Collector 2.Base 3.Emitter
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H -
C 0.5000 - 12.70 - I D 0.0142 0.0220 0.36 0.56
E-*0.0500 -
1.27
*
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
1
α
2
α
3
α
-
-
-
0.1000 -
*
0.0500 -
*
5
°
*
2
°
*
2
°
*
-
-
-
*:Typical
2.54
*
1.27
*
5
°
*
2
°
*
2
°
*
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification