
HI-SINCERITY
MICROELECTRONICS CORP.
HBAT54\A\C\S
Description
Silicon Schottky Barrier Double Diodes
Features
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 1/3
These diodes feature very low turn-on voltage and fast switching.
There is a PN junction guard ring against excessive voltage such as
electronics attic discharges protects these devices.
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature.............................................................................................. -65~+125 °C
Junction Temperature.................................................................................................... +125 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 230 mW
• Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage........................................................................................ 30 V
Forward Continuous Current.......................................................................................... 200 mA
Repetitive Peak Forward Current .................................................................................. 300 mA
Surge Forward Current (tp<1s)....................................................................................... 600 mA
Characteristics (Ta=25°C)
Characteristic Symbol Condition Min. Max. Unit
Reverse breakdown Voltage V(BR)R IR=10uA 30 - V
VF(1) IF=0.1mA - 240 mV
VF(2) IF=1mA - 320 mV
Forward Voltage
Reverse Current IR VR=25V - 2.0 uA
Total Capacitance CT VR=1V, f=1MHz - 10 pF
Reverse Recovery Time Trr
VF(3) IF=10mA - 400 mV
VF(4) IF=30mA - 500 mV
VF(5) IF=100mA - 1000 mV
IF=IR=10mA RL=100Ω
measured at IR=1mA
-5nS
HBAT54, HBAT54A, HBAT54C, HBAT 54S HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 2/3
250
200
(mA)
F
150
100
Forward Current-I
50
0
0 200 400 600 800 1000
Forward Curren t & Forward Voltage
Forwar d Voltage-VF (mV)
100
Diode Capacitance-Cd (pF)
Diode Capac itance & Rever se-Biased Voltage
10
1
0.1 1 10 100
Reverse Biased Voltage-VR (V)
HBAT54, HBAT54A, HBAT54C, HBAT 54S HSMC Product Specification

HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 3/3
Diagram:
Marking:
A
L
3
B
S
21
GV
33
L 4
Product Code
Control Code
HBAT54 HBAT54A
3
12
HBAT54C
12
HBAT54S
2211
3
3-Lead SOT-23 Plastic Surface Mounted Package
HSMC Package Code: N
C
D
H
JK
Style: Pin 1.Anode 2.Cathode
3.Common Connection
• HBAT54: Single Diode , also available as double diodes. (Marking Code L4)
• HBAT54A: Common Anode. (Marking Code L42)
• HBAT54C: Common Cathode. (Marking Code L43)
• HBAT54S: Series Connected. (Marking Code L44)
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
*: Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBAT54, HBAT54A, HBAT54C, HBAT 54S HSMC Product Specification