Datasheet HAT2049T Datasheet (HIT)

Silicon N Channel Power MOS FET

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

HAT2049T

High Speed Power Switching

ADE-208-723 (Z)

1st. Edition

February 1999

TSSOP–8

4 G

1 D

S 2

8

5

DD

S

S6S

3

5

6

7

8

4

3

2

1

1, 5, 8 Drain 2, 3, 6, 7 Source

7

4 Gate

HAT2049T

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V Gate to source breakdown voltage V Gate to source leak current I Zero gate voltege drain current I Gate to source cutoff voltage V Static drain to source on state R resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

Forward transfer admittance |yfs|1320—S ID = 4 A, VDS = 10 V Input capacitance Ciss — 1430 — pF VDS = 10 V Output capacitance Coss — 410 — pF VGS = 0 Reverse transfer capacitance Crss — 265 — pF f = 1MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time Note: 3. Pulse test

30——V I ± 12 — — V IG = ± 100 µA, VDS = 0 ——± 0.1 µAVGS = ± 12 V, VDS = 0 ——1 µAVDS = 30 V, VGS = 0

0.4 — 1.4 V VDS = 10 V, I D = 1 mA — 0.013 0.017 Ω ID = 4 A, VGS = 4 V — 0.017 0.025 Ω ID = 4 A, VGS = 2.5 V

— 23 — ns VGS = 4 V, ID = 4 A — 165 — ns VDD ≅ 10 V — 215 — ns — 185 — ns — 0.83 1.08 V IF = 8 A , VGS = 0 — 30 — ns IF = 8 A, VGS = 0

30 V ± 12 V 8A 64 A 8A

1.3 W

= 10 mA, VGS = 0

D

Note3

diF/ dt = 20 A/µs

Note3

2

Main Characteristics

HAT2049T

Power vs. Temperature Derating

2.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s

1.5

1.0

0.5

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

20

2 V

16

10 V

4 V

D

12

Pulse Test

100

Maximum Safe Operation Area

30 10

D

3

DC Operation (PW < 10 s)

1

Operation in

0.3 this area is

0.1

0.03

0.01

limited by R

DS(on)

Ta = 25 °C 1 shot Pulse

0.1

0.3 1 3 10 30 100

Drain Current I (A)

Drain to Source Voltage V (V) Note 4 :

When using the glass epoxy board (FR4 40x40x1.6 mm)

Typical Transfer Characteristics

20

16

D

12

10 µs

100 µs

1 ms

PW = 10 ms

Note 4

Tc = –25 °C

25 °C

75 °C

DS

8

Drain Current I (A)

4

0

12345

V = 1.5 V

Drain to Source Voltage V (V)

GS

DS

8

Drain Current I (A)

4

0

1234

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

5

3

HAT2049T

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.25

0.2

DS(on)

Pulse Test

0.15

0.1 I = 5 A

D

0.05 2 A

Drain to Source Voltage V (V)

1 A

0

246810

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

vs. Temperature

0.10

Ω

Pulse Test

0.08

DS(on)

R ( )

0.06

0.04 V = 2.5 V

GS

ID=1 A, 2 A, 5 A

0.02

1 A, 2 A, 5 A

0

–40 0 40 80 120 160

Static Drain to Source on State Resistance

4 V

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

0.2 Pulse Test

Ω

0.1

0.05

DS(on)

R ( )

V = 2.5 V

0.02

GS

0.01

0.005

Drain to Source On State Resistance

0.002

0.2

0.5

2

1

Drain Current I (A)

D

Forward Transfer Admittance vs.

50

Drain Current

Tc = –25 °C

20

10

5

25 °C

75 °C

2

1

Forward Transfer Admittance |yfs| (S)

0.5

0.2

0.5 1 2 Drain Current I (A)

V = 10 V Pulse Test

D

4 V

51020

DS

510

20

4

HAT2049T

Body–Drain Diode Reverse

500

Recovery Time

200

100

50

20

10

Reverse Recovery Time trr (ns)

di/dt = 20 A/µs V = 0, Ta = 25°C

GS

5

0.1

0.2 0.5 1 2 5 10

Reverse Drain Current I (A)

Dynamic Input Characteristics

DS

50

40

I = 8 A

D

V = 5 V

DD

10 V 20 V

30

V

DS

20

10

Drain to Source Voltage V (V)

0

4 8 12 16 20

GS

V = 20 V

DD

10 V

5 V

Gate Charge Qg (nc)

DR

Typical Capacitance vs.

10000

Drain to Source Voltage

3000

1000

300

100

Capacitance C (pF)

30

10

10 20 30 40 50

0

Drain to Source Voltage V (V)

10

8

GS

500

200

100

Switching Characteristics

t

f

6

50

4

20

2

Switching Time t (ns)

10

Gate to Source Voltage V (V)

0

5

0.2 0.5 1 2 5 10

0.1 Drain Current I (A)

V = 0

GS

f = 1 MHz

Ciss

Coss

Crss

DS

t

d(off)

t

r

t

d(on)

V = 4 V, V = 10 V

GS

DD

PW = 3 µs, duty < 1 %

D

5

HAT2049T

Reverse Drain Current vs.

Source to Drain Voltage

20

16

DR

5 V

12

8

V = 0, –5 V

GS

4

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SD

Switching Time Test Circuit Switching Time Waveform

Vin Monitor

Vout Monitor

D.U.T.

R

Vin 4 V

50Ω

L

V

DD

= 10 V

Vin

Vout

10%

90%

10%

td(on)

90%

tr

90%

td(off)

t

f

6

HAT2049T

10

s (t)

γ

0.01

0.001

Normalized Transient Thermal Impedance

0.0001

0.1

1

10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 1 m 10 m 100 m 1 10

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 139 °C/W, Ta = 25 °C

When using the glass epoxy board (FR4 40x40x1.6 mm)

P

DM

Pulse Width PW (S)

PW

D =

T

PW T

100 1000 10000

7

HAT2049T

Package Dimensions

3.00 ± 0.1

Unit: mm

0.65

0.22

8

1

5

4

4.40 ± 0.1

6.40 ± 0.20

1.10 Max

0 – 8 °

+0.03

+0.08 –0.07

0.10

0.13

–0.04

0.07

M

0.17 ± 0.05

0.50 ± 0.10

Hitachi code

EIAJ

JEDEC

TTP–8D

— —

8

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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