Datasheet HAT2040R Datasheet (HIT)

Silicon N Channel Power MOS FET

Features

• Capable of 4 V gate drive

• Low drive current

• High density mounting

• Low on-resistance

R

=6.2m typ

DS(on)

Outline

HAT2040R

Power Switching

ADE-208-565D (Z)

5th. Edition

February 1999

SOP–8

4

G

56 7 8 D

D

DD

SSS 1

23

5

6

7

8

2

1

1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

4

3

HAT2040R

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

30 V ±20 V 15 A 120 A 15 A

2.5 W

2

HAT2040R

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

30——V I

voltage Gate to source leak current I Zero gate voltege drain

GSS

I

DSS

——±0.1 µAVGS = ±20V, VDS = 0 ——1 µAVDS = 30 V, VGS = 0

current Gate to source cutoff voltage V Static drain to source on state R resistance R

GS(off)

DS(on)

1.0 — 2.5 V VDS = 10V, I D = 1mA — 6.2 8.0 mΩ ID = 8A, VGS = 10V

— 9.0 13.0 mΩ ID = 8A, VGS = 4V Forward transfer admittance |yfs|1830—SI Input capacitance Ciss — 4400 — pF VDS = 10V Output capacitance Coss — 950 — pF VGS = 0 Reverse transfer capacitance Crss — 400 — pF f = 1MHz Total gate charge Qg — 90 — nc VDD = 10V Gate to source charge Qgs — 15 — nc VGS = 10V Gate to drain charge Qgd — 18 — nc ID = 15A Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward

V

d(on)

r

d(off)

f

DF

— 110 — ns VGS = 4V, ID = 8A

— 440 — ns VDD ≅ 10V

— 160 — ns

— 170 — ns

— 0.9 1.17 V IF = 15A, VGS = 0 voltage

Body–drain diode reverse

t

rr

— 55 — ns IF = 15A, VGS = 0 recovery time

Note: 3. Pulse test

= 10mA, VGS = 0

D

= 8A, VDS = 10V

D

diF/ dt =20A/µs

Note3

3

HAT2040R

Main Characteristics

Power vs. Temperature Derating

4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

50

10V

4 V

40

3.5 V

Pulse Test

500

Maximum Safe Operation Area

100

D

10

1

Operation in

DC Operation (PW < 10 s)

this area is

Drain Current I (A)

limited by R

0.1

DS(on)

Ta = 25 °C 1 shot Pulse

0.01

0.1

0.3 1 3 10 30 100

Drain to Source Voltage V (V)

Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm)

Typical Transfer Characteristics

50

V = 10 V

DS

Pulse Test

40

10 µs

100 µs

1 ms

PW = 10 ms

Note 4

DS

D

30

20

Drain Current I (A)

10

V = 2.5 V

GS

0

246810

Drain to Source Voltage V (V)

3 V

DS

D

30

20

Drain Current I (A)

10

0

Tc = 75°C

1234

Gate to Source Voltage V (V)

25°C

–25°C

5

GS

4

HAT2040R

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.20 Pulse Test

0.16

DS(on)

0.12

0.08

I = 10 A

D

0.04

Drain to Source Voltage V (V)

0

4 8 12 16 20

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

vs. Temperature

20

Ω

Pulse Test

16

I = 2 A, 5 A, 10 A

D

DS(on)

R (m )

12

V = 4 V

GS

8

2 A, 5 A, 10 A

5 A 2 A

Static Drain to Source on State Resistance

vs. Drain Current

100

Pulse Test

Ω

50

20

DS(on)

R (m )

10

5

V = 4 V

GS

10 V

2

Drain to Source On State Resistance

1

0.1

0.2

1 10 100

0.5 2 5 20 50 Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

100

30

Tc = –25 °C

10

75 °C

3

25 °C

1

4

10 V

0

–40 0 40 80 120 160

Static Drain to Source on State Resistance

Case Temperature Tc (°C)

0.3

0.1

Forward Transfer Admittance |yfs| (S)

0.1

0.3

1 10 100

Drain Current I (A)

V = 10 V

DS

Pulse Test

330

D

5

HAT2040R

Body–Drain Diode Reverse

Recovery Time

100

50

20

di/dt = 20 A/µs

Reverse Recovery Time trr (ns)

10

0.1

0.2 0.5 1 2 5 10 20

V = 0, Ta = 25°C

GS

Reverse Drain Current I (A)

DR

Typical Capacitance vs. Drain to Source Voltage

10000

Ciss

3000

1000

Coss

300

Crss

100

Capacitance C (pF)

30 10

V = 0

GS

f = 1 MHz

01020304050

Drain to Source Voltage V (V)

DS

Dynamic Input Characteristics

50

I = 15 A

D

DS

40

V = 5 V

DD

10 V 25 V

30

V

DS

V

GS

20

10

Drain to Source Voltage V (V)

0

V = 25 V

DD

10 V

5 V

40 80 120 160 200

Gate Charge Qg (nc)

20

1000

Switching Characteristics

500

16

GS

200

12

100

8

4

Gate to Source Voltage V (V)

0

50

Switching Time t (ns)

20

V = 4 V, V = 10 V

GS

RG = 50 , duty < 1 %

10

Ω

0.2 0.5 1 2 5 10 200.1 Drain Current I (A)

DS

t

d(off)

t

d(on)

t

r

t

f

D

6

50

HAT2040R

Reverse Drain Current vs.

Souece to Drain Voltage

10

s (t)

γ

0.1

0.01

40

DR

30

10 V

5 V

V = 0

GS

20

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SD

Normalized Transient Thermal Impedance vs. Pulse Width

D = 1

1

0.5

0.2

0.1

0.05

0.02

0.01

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 83.3 °C/W, Ta = 25 °C

When using the glass epoxy board (FR4 40x40x1.6 mm)

0.001

Normalized Transient Thermal Impedance

1shot pulse

0.0001 10 µ

100 µ 1 m 10 m 100 m 1 10

P

DM

Pulse Width PW (S)

PW

D =

T

PW

T

100 1000 1000

7

HAT2040R

Switching Time Test Circuit Switching Time Waveform

Vin Monitor

Vin 4 V

50Ω

D.U.T.

R

L

V

DS

= 10 V

Vout Monitor

Vin

Vout

10%

90%

10%

td(on)

90%

tr

90%

td(off)

t

f

8

Package Dimensions

5.0 Max

HAT2040R

Unit: mm

8

1

1.27

0.51 Max

5

4

4.0 Max

1.75 Max

0.25 Max

0.15

0.25

M

6.2 Max

0.25 Max 0 – 8°

1.27 Max

Hitachi code

JEDEC

EIAJ

FP–8DA

—

MS-012AA

9

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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