Datasheet HAT2037T Datasheet (HIT)

Silicon N Channel Power MOS FET

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

HAT2037T

High Speed Power Switching

ADE-208-530 D (Z)

5th. Edition

February 1999

TSSOP–8

4
G

1
D

S
2

8

5

DD

S

S6S

3

7

5

6

7

8

4

3

2

1

1, 5, 8 Drain
2, 3, 6, 7 Source
4 Gate

HAT2037T

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 9 14 — S ID = 3A, VDS = 10V
Input capacitance Ciss — 780 — pF VDS = 10V
Output capacitance Coss — 470 — pF VGS = 0
Reverse transfer capacitance Crss — 190 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

28——V I
±12——V I
——±10 µAVGS = ±10V, VDS = 0
——1 µAVDS = 28 V, VGS = 0

0.4 — 1.4 V VDS = 10V, I D = 1mA
— 0.021 0.028 Ω ID = 3A, VGS = 4V
— 0.027 0.038 Ω ID = 3A, VGS = 2.5V

— 20 — ns VGS = 4V, ID = 3A
— 130 — ns VDD ≈ 10V
— 155 — ns
— 160 — ns
— 0.81 1.06 V IF =5.5A, VGS = 0
— 55 — ns IF = 5.5A, VGS = 0

28 V
±12 V

5.5 A
44 A

5.5 A

1.3 W

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

diF/ dt =20A/µs

Note3

Note3

Note3

Note3

2

Main Characteristics

HAT2037T

Power vs. Temperature Derating

2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

1.5

1.0

0.5

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

50

10V

5 V

40

D

4 V

30

3 V

2.5 V

100

Maximum Safe Operation Area

30
10

D

3

DC Operation (PW < 10 s)

1

Operation in

0.3
this area is

0.1

0.03

0.01

limited by R

DS(on)

Ta = 25 °C
1 shot Pulse

0.1

0.3 1 3 10 30 100

Drain Current I (A)

Drain to Source Voltage V (V)
Note 4 :

When using the glass epoxy board
(FR4 40x40x1.6 mm)

Typical Transfer Characteristics

50

40

–25°C

25°C

D

30

10 µs

100 µs

1 ms

PW = 10 ms

Note 4

DS

Tc = 75°C

20

Drain Current I (A)

10

0

246810

Drain to Source Voltage V (V)

V = 1.5 V

GS

Pulse Test

DS

20

Drain Current I (A)

10

0

1234

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

5

3

HAT2037T

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.25

0.20

DS(on)

Pulse Test

0.15

I = 5 A

0.10

0.05

D

2 A
1 A

Drain to Source Voltage V (V)

0

2 4 6 8 10 0.2 0.5 1 2 5 10 20

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

50

W

40

DS(on)

R (m )

30

20

vs. Temperature

V = 2.5 V

GS

I = 5 A

D

2 A 1 A

5, 2, 1 A

4 V

10

Pulse Test

0

–40 0 40 80 120 160

Static Drain to Source on State Resistance

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

0.2

Pulse Test

W

0.1

0.05

DS(on)

R ( )

0.02

0.01

0.005

Drain to Source On State Resistance

0.002

Drain Current I (A)

V = 4 V

GS

D

Forward Transfer Admittance vs.

50

20
10

5

Drain Current

Tc = –25 °C

75 °C

25 °C

2

1

0.5

Forward Transfer Admittance |yfs| (S)

V = 10 V

DS

Pulse Test

0.2 0.5 1 2 5 10 20
Drain Current I (A)

D

2.5 V

4

HAT2037T

Body–Drain Diode Reverse

500

Recovery Time

200

100

50

20

10

Reverse Recovery Time trr (ns)

5

di/dt = 20 A/µs
V = 0, Ta = 25°C

GS

0.2 0.5 1 2 5 100.1

Reverse Drain Current I (A)

Dynamic Input Characteristics

50

I = 5.5 A

D

40

DS

30

V

DS

V = 5 V

DD

10 V
25 V

20

10

V = 25 V

DD

Drain to Source Voltage V (V)

0

4 8 12 16 20

Gate Charge Qg (nc)

DR

V

10 V

5 V

GS

Typical Capacitance vs.

10000

Drain to Source Voltage

3000

1000

300

100

Capacitance C (pF)

30

10

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

10

8

GS

1000

V = 4 V, V = 10 V

GS

PW = 3 µs, duty < 1 %

500

200

t

6

100

4

2

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

0

10

0.2 0.5 1 2 5 100.1
Drain Current I (A)

DD

d(off)

t

f

t

Ciss

Coss

Crss

t

r

d(on)

V = 0

GS

f = 1 MHz

DS

D

5

HAT2037T

Reverse Drain Current vs.

Souece to Drain Voltage

50

Pulse Test

40

DR

30

s (t)

γ

0.01

10

0.1

20

5 V

V = 0 V

GS

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

Normalized Transient Thermal Impedance vs. Pulse Width

D = 1

1

0.5

0.2

0.1

0.05

0.02

0.01

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 139 °C/W, Ta = 25 °C

When using the glass epoxy board
(FR4 40x40x1.6 mm)

0.001

Normalized Transient Thermal Impedance

1shot pulse

0.0001
10 µ

100 µ 1 m 10 m 100 m 1 10

6

P

DM

Pulse Width PW (S)

PW

D =

T

PW
T

100 1000 10000

Switching Time Test Circuit Switching Time Waveform

R

L

V

DD

= 10 V

Vout
Monitor

Vin

Vout

10%

10%

Vin Monitor

Vin
4 V

D.U.T.

50W

HAT2037T

90%

10%

td(on)

90%

tr

90%

td(off)

t

f

7

HAT2037T

Package Dimensions

3.00 ± 0.1

Unit: mm

0.65

0.22

8

1

5

4

4.40 ± 0.1

6.40 ± 0.20

1.10 Max

0 – 8 °

+0.03

+0.08
–0.07

0.10

0.13

M

–0.04

0.07

0.17 ± 0.05

0.50 ± 0.10

Hitachi code

EIAJ

JEDEC

TTP–8D

—
—

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HAT2037T

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

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