Datasheet HAT2033RJ, HAT2033R Datasheet (HIT)

HAT2033R/HAT2033RJ

Silicon N Channel Power MOS FET

High Speed Power Switching

Features

• For Automotive Application ( at Type Code “J “)

• Low on-resistance

• Capable of 4 V gate drive

• High density mounting

Outline

ADE-208-664B (Z)

3rd. Edition

February 1999

SOP–8

4

G

56 7 8
D

D

DD

SSS
1

23

5

6

7

8

2

1

1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain

4

3

HAT2033R/HAT2033RJ

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current HAT2033R I

DSS

GSS

D

D(pulse)

DR

Note4

AP

Note1

HAT2033RJ 7 A

Avalanche energy HAT2033R E

Note4

AR

HAT2033RJ 4.2 mJ

Channel dissipation Pch

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. Value at Tch=25°C, Rg≥50Ω

60 V
± 20 V
7A
56 A
7A
——

——

2.5 W

2

HAT2033R/HAT2033RJ

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltage HAT2033R I
drain current HAT2033RJ I
Zero gate voltage HAT2033R I
drain current HAT2033RJ I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

DSS

DSS

DSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 6.5 10 — S ID = 4 A, VDS = 10 V
Input capacitance Ciss — 740 — pF VDS = 10 V
Output capacitance Coss — 370 — pF VGS = 0
Reverse transfer capacitance Crss — 130 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 4. Pulse test

60——V ID = 10 mA, VGS = 0
± 20 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 16 V, VDS = 0
——1 µAVDS = 60 V, VGS = 0
— — 0.1 µA
———µAVDS =4 8V , VGS = 0
——10µA Ta = 125°C

1.2 — 2.2 V VDS = 10 V, I D = 1 mA
— 0.03 0.038 Ω ID = 4 A, VGS = 10 V
— 0.04 0.053 Ω ID = 4 A, VGS = 4 V

—13—nsVGS =10 V, ID = 4 A
—55—nsVDD ≅ 30 V
— 140 — ns
—95—ns
— 0.82 1.07 V IF = 7 A, VGS = 0

Note4

— 45 — ns IF = 7 A , VGS = 0

diF/ dt = 50 A/µs

Note4

Note4

Note4

3

HAT2033R/HAT2033RJ

Main Characteristics

Power vs. Temperature Derating

4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

50

10 V

6 V

40

Pulse Test

4.5 V

Maximum Safe Operation Area

100

10 µs

30
10

D

DC Operation (PW < 10 s)

3
1

Operation in

0.3

Drain Current I (A)

this area is
limited by R

0.1
Ta = 25°C

0.03

1 shot Pulse
1 Drive Operation

0.01

0.1

DS(on)

0.3 1 3 10 30 100

Drain to Source Voltage V (V)
Note 6 :

When using the glass epoxy board
(FR4 40x40x1.6 mm)

Typical Transfer Characteristics

20

V = 10 V

DS

Pulse Test

16

100 µs

1 ms

PW = 10 ms (1shot)

Note6

DS

D

30

20

Drain Current I (A)

10

0

Drain to Source Voltage V (V)

4

4.0 V

3.5 V

3.0 V

V = 2.5 V

GS

246810

DS

D

12

8

Drain Current I (A)

4

0

Tc = 75°C

12345

Gate to Source Voltage V (V)

25°C

–25°C

GS

HAT2033R/HAT2033RJ

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5
Pulse Test

0.4

DS(on)

V (V)

0.3

0.2

0.1

I = 5 A

D

2 A

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

12

16 20

GS

Static Drain to Source on State Resistance

vs. Temperature

Ω

0.10
Pulse Test

0.08

DS(on)

R ( )

0.06

0.04

0.02

V = 4 V

GS

10 V

1, 2 A

1, 2, 5 A

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

1 A

5 A

Static Drain to Source on State Resistance

vs. Drain Current

0.5

Pulse Test

Ω

0.2

DS(on)

R ( )

0.1

V = 4 V

0.05

0.02

Drain to Source On State Resistance

0.01

0.1 1 100.2 5
Drain Current I (A)

GS

10 V

20.5

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

Tc = –25 °C

10

5

75 °C

2

1

Forward Transfer Admittance |y | (S)

0.5

V = 10 V
Pulse Test

0.1 0.3 1 3 10 30 100
Drain Current I (A)

D

5020

25 °C

DS

5

HAT2033R/HAT2033RJ

Body–Drain Diode Reverse

1000

Recovery Time

di / dt = 50 A / µs

500

V = 0, Ta = 25 °C

GS

200
100

50

20

Reverse Recovery Time trr (ns)

10

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

100

I = 7 A

D

80

DS

V = 50 V

60

DD

25 V

V

10 V

DS

V

40

20

Drain to Source Voltage V (V)

0

V = 50 V

DD

25 V
10 V

8 16243240

Gate Charge Qg (nc)

GS

Typical Capacitance vs.
Drain to Source Voltage

5000

2000

1000

500
200

100

Capacitance C (pF)

50

V = 0

20

GS

f = 1 MHz

10

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

16

GS

1000

300

100

12

30

t

f

t

r

8

10

4

0

Switching Time t (ns)

3

Gate to Source Voltage V (V)

1

0.1 0.3 1 3 10 30 100
Drain Current I (A)

Ciss

Coss

Crss

DS

t

d(off)

t

d(on)

V = 10 V, V = 3 0 V

GS

DD

PW = 5 µs, duty < 1 %

D

6

HAT2033R/HAT2033RJ

Reverse Drain Current vs.

Souece to Drain Voltage

20

16

DR

10 V

12

8

5 V

V = 0, –5 V

4

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit

V

DS

Monitor

Rg

Vin
15 V

50Ω

GS

D. U. T

Pulse Test

SD

L

I

AP

Monitor

Maximun Avalanche Energy vs.

Channel Temperature Derating

5

I = 7 A

AP

AR

4

V = 25 V

DD

L = 100 µH
duty < 0.1 %

3

Rg > 50

Ω

2

1

Repetive Avalanche Energy E (mJ)

0

25 50 75 100 125 150

Channel Temperature Tch (°C)

Avalanche Waveform

V

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

7

HAT2033R/HAT2033RJ

10

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

γ

D = 1

1

0.5

0.2

0.1

0.1

0.05

0.01

0.02

0.01

0.001

Normalized Transient Thermal Impedance

1shot pulse

0.0001
10 µ

100 µ 1 m 10 m 100 m 1 10

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 83.3 °C/W, Ta = 25 °C

When using the glass epoxy board
(FR4 40x40x1.6 mm)

P

DM

Pulse Width PW (S)

PW

D =

T

PW
T

100 1000 10000

Switching Time Test Circuit Switching Time Waveform

Vin Monitor

Vout
Monitor

D.U.T.

R

Vin
10 V

50Ω

L

V

DD

= 30 V

Vin
Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

8

Package Dimensions

5.0 Max

HAT2033R/HAT2033RJ

Unit: mm

8

1

1.27

0.51 Max

5

4

4.0 Max

1.75 Max

0.25 Max

0.15

0.25

M

6.2 Max

0.25 Max
0 – 8°

1.27 Max

Hitachi code

EIAJ

JEDEC

FP–8DA

—

MS-012AA

9

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