Datasheet HAT2028RJ, HAT2028R-D Datasheet (HIT)

HAT2028R/HAT2028RJ

Silicon N Channel Power MOS FET

High Speed Power Switching

ADE-208-524C (Z)

4th. Edition

February 1999

Features

• For Automotive Application ( at Type Code “J “)

• Low on-resistance

• Capable of 4 V gate drive

• High density mounting

Outline

SOP–8

1

2

3

4

5

6

7

8

G

DSD

G

DSD

MOS1

MOS2

1

2

78

4

5

6

3

1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain

HAT2028R/HAT2028RJ

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

60 V

Gate to source voltage V

GSS

± 20 V

Drain current I

D

4A

Drain peak current I

D(pulse)

Note1

32 A

Body-drain diode reverse drain current I

DR

4A

Avalanche current HAT2028R I

AP

Note4

——

HAT2028RJ 4 A

Avalanche energy HAT2028R E

AR

Note4

——

HAT2028RJ 1.37 mJ

Channel dissipation Pch

Note2

2W

Channel dissipation Pch

Note3

3W Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

4. Value at Tch=25°C, Rg≥50Ω

HAT2028R/HAT2028RJ

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdownvoltage V

(BR)DSS

60——V ID = 10 mA, VGS = 0

Gate to source breakdownvoltage V

(BR)GSS

± 20 — — V IG = ± 100 µA, VDS = 0

Gate to source leak current I

GSS

——± 10 µAVGS = ± 16 V, VDS = 0

Zero gate voltage HAT2028R I

DSS

——1 µAVDS = 60 V, VGS = 0

drain current HAT2028RJ I

DSS

— — 0.1 µA

Zero gate voltage HAT2028R I

DSS

———µAVDS = 48 V, VGS = 0

drain current HAT2028RJ I

DSS

——10µA Ta = 125°C

Gate to source cutoff voltage V

GS(off)

1.3 — 2.3 V VDS = 10 V, I D = 1 mA

Static drain to source on state resistance R

DS(on)

— 0.08 0.1 Ω ID = 2 A, VGS = 10 V

Note5

R

DS(on)

— 0.12 0.16 Ω ID = 2 A, VGS = 4 V

Note5

Forward transfer admittance |yfs| 3.3 5 — S ID = 2 A, VDS = 10 V

Note5

Input capacitance Ciss — 280 — pF VDS = 10 V Output capacitance Coss — 150 — pF VGS = 0 Reverse transfer capacitance Crss — 55 — pF f = 1MHz Turn-on delay time t

d(on)

— 15 — ns VGS = 4 V, ID = 2 A

Rise time t

r

— 100 — ns VDD ≅ 30 V

Turn-off delay time t

d(off)

—35—ns

Fall time t

f

—45—ns

Body–drain diode forwardvoltage V

DF

— 0.88 1.15 V IF = 4 A, VGS = 0

Note5

Body–drain diode reverse recovery time t

rr

— 40 — ns IF = 4 A, VGS = 0

diF/ dt = 50 A/µs

Note: 5. Pulse test

HAT2028R/HAT2028RJ

4

Main Characteristics

4.0

3.0

2.0

1.0

0

50 100 150 200

100

30 10

3 1

0.3

0.1

0.03

0.01

0.1

0.3 1 3 10 30 100

20

16

12

8

4

0

246810

10V

20

16

12

8

4

0

2468

10

10 µs

100 µs

1 ms

PW = 10 ms

8 V

Tc = 75°C

25°C

–25°C

V = 10 V Pulse Test

DS

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Note 6 : When using the glass epoxy board (FR4 40x40x1.6 mm)

2 Drive Operation

1 Drive Operation

Operation in this area is limited by R

DS(on)

Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s

Note6

DC Operation (PW < 10 s)

6 V

4.5 V

4 V

3.5 V

3 V

V = 2.5 V

GS

5 V

Pulse Test

Ta = 25°C 1 shot Pulse 1 Drive Operation

HAT2028R/HAT2028RJ

5

0.5

0.4

0.3

0.2

0.1

0

0.5

0.2

0.05

0.1

0.02

1

0.01

0.2 0.5 1 2 5 10

0.25

0.20

0.15

0.10

0.05

–40 0 40 80 120 160

0

0.2 0.5

1

2 5 10 20

5

2

0.5

1

0.2

10

20

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R ( )

Ω

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

Drain Current I (A)

D

Pulse Test

I = 2 A

D

1 A

0.5 A

I = 0.5, 1, 2 A

D

V = 4 V

GS

10 V

246810

0.1

Pulse Test

V = 4 V

GS

10 V

0.5, 1, 2 A

25 °C

Tc = –25 °C

75 °C

DS

V = 10 V Pulse Test

HAT2028R/HAT2028RJ

6

0.2 0.5 1 2 5 100.1

500

200

100

20

50

10

5

01020304050

1000

200

100

20 10

100

80

60

40

20

0

20

16

12

8

4

246810

0

di/dt = 50 A/µs V = 0, Ta = 25°C

GS

500

50

Ciss

Coss

Crss

V = 0 f = 1 MHz

GS

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs. Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

V

GS

V

DS

I = 4 A

D

V = 50 V

25 V 10 V

DD

V = 10 V

25 V 50 V

DD

3

0.2 0.5 1 2 5 100.1

1000

300

100

10

30

1

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

t

f

r

t

d(off)

t

d(on)

t

V = 4 V, V = 30 V PW = 3 µs, duty < 1 %

GS

DD

HAT2028R/HAT2028RJ

7

Vin Monitor

D.U.T.

Vin 4 V

R

L

V = 30 V

DD

tr

td(on)

Vin

90%

10%

Vout

td(off)

Vout Monitor

50Ω

90%

10%

t

f

Switching Time Test Circuit Switching Time Waveform

20

16

12

8

4

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Souece to Drain Voltage

Pulse Test

0, –5 V

V = 5 V

GS

2.5

2.0

1.5

1.0

0.5

25 50 75 100 125 150

0

I = 4 A V = 25 V L = 100 µH duty < 0.1 % Rg > 50

AP

DD

Ω

Channel Temperature Tch (°C)

Repetive Avalanche Energy E (mJ)

AR

Maximun Avalanche Energy vs.

Channel Temperature Derating

D. U. T

Rg

I Monitor

AP

V Monitor

DS

V

DD

50Ω

Vin 15 V

0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1

V

V – V

AR

AP

DSS

DSS DD

2

Avalanche Test Circuit Avalanche Waveform

HAT2028R/HAT2028RJ

8

10 µ

100 µ 1 m 10 m 100 m 1 10

100 1000 10000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

γ

DM

P

PW

T

D =

PW

T

ch – f(t) = s (t) • ch – f ch – f = 125 °C/W, Ta = 25 °C

θ γ θ θ

When using the glass epoxy board (FR4 40x40x1.6 mm)

10 µ

100 µ 1 m 10 m 100 m 1 10

100 1000 10000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

γ

DM

P

PW

T

D =

PW

T

ch – f(t) = s (t) • ch – f ch – f = 166 °C/W, Ta = 25 °C

θ γ θ θ

When using the glass epoxy board (FR4 40x40x1.6 mm)

HAT2028R/HAT2028RJ

9

Package Dimensions

Unit: mm

1.75 Max

4.0 Max

M

8

5

1

4

5.0 Max

6.2 Max

1.27

0.15 Hitachi code

EIAJ

JEDEC

FP–8DA

—

MS-012AA

0.25 Max

1.27 Max

0.51 Max

0.25

0 – 8°

Cautions

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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