Datasheet HAT2025R Datasheet (HIT)

Silicon N Channel Power MOS FET

Features

• High speed switching

• Low on-resistance

• Capable of 4 V gate drive

• Low drive current

• High density mounting

Outline

HAT2025R

High Speed Power Switching

ADE-208-518C (Z)

4th. Edition

February 1999

SOP–8

4

G

56 7 8 D

D

DD

SSS 1

23

5

6

7

8

2

1

1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

4

3

HAT2025R

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V Gate to source breakdown voltage V Gate to source leak current I Zero gate voltege drain current I Gate to source cutoff voltage V Static drain to source on state R resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

Forward transfer admittance |yfs| 7 11 — S ID = 4 A, VDS = 10 V Input capacitance Ciss — 660 — pF VDS = 10 V Output capacitance Coss — 510 — pF VGS = 0 Reverse transfer capacitance Crss — 130 — pF f = 1MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time Note: 3. Pulse test

30——V I ± 20 — — V IG = ± 100 µA, VDS = 0 ——± 10 µAVGS = ± 16 V, VDS = 0 ——10µAVDS = 30 V, VGS = 0

1.3 — 2.4 V VDS = 10 V, I D = 1 mA — 0.019 0.026 Ω ID = 4 A, VGS = 10 V — 0.030 0.050 Ω ID = 4 A, VGS = 4.5 V

— 30 — ns VGS = 4 V, ID = 4 A — 265 — ns VDD ≅ 10 V —35—ns —58—ns — 0.8 1.3 V IF = 8 A, VGS = 0 — 55 — ns IF = 8 A, VGS = 0

30 V ± 20 V 8A 64 A 8A

2.5 W

= 10 mA, VGS = 0

D

Note3

diF/ dt = 20 A/µs

Note3

2

Main Characteristics

HAT2025R

Power vs. Temperature Derating

4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

10V

20

5 V

4.5 V

16

D

4 V

12

3.5 V

Pulse Test

100

Maximum Safe Operation Area

10 µs

30 10

D

DC Operation (PW < 10 s)

3 1

Operation in

0.3 this area is

0.1

0.03

0.01

0.1

limited by R

DS(on)

Ta = 25 °C 1 shot Pulse

0.3 1 3 10 30 100

Drain Current I (A)

Drain to Source Voltage V (V) Note 4 :

When using the glass epoxy board (FR4 40x40x1.6 mm)

Typical Transfer Characteristics

50

40

D

30

–25°C

100 µs

1 ms

PW = 10 ms

Note 4

25°C

Tc = 75°C

DS

8

Drain Current I (A)

4

0

246810

Drain to Source Voltage V (V)

3 V

V = 2.5 V

GS

DS

20

Drain Current I (A)

10

0

2468

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

10

3

HAT2025R

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.20

0.16

DS(on)

0.12

Pulse Test

I = 5 A

D

0.08

0.04

2 A 1 A

Drain to Source Voltage V (V)

0

2 4 6 8 10 0.2 0.5 1 2 5 10 20

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

vs. Temperature

100

Ω

Pulse Test

80

DS(on)

R (m )

60

40

20

V = 4 V

GS

4.5 V

I = 5 A

D

5 A

5, 2, 1 A

2, 1 A

10 V

0

–40 0 40 80 120 160

Static Drain to Source on State Resistance

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

500

Pulse Test

Ω

200

100

DS(on)

R (m )

50

20

4.5 V

V = 10 V

GS

10

Drain to Source On State Resistance

5

Drain Current I (A)

D

Forward Transfer Admittance vs.

50

Drain Current

20

Tc = –25 °C

10

5

75 °C

2

1

0.5

Forward Transfer Admittance |yfs| (S)

0.2 0.5

25 °C

V = 10 V

DS

Pulse Test

1

2 5 10 20

Drain Current I (A)

D

4 V

4

HAT2025R

Body–Drain Diode Reverse

500

Recovery Time

200

100

50

20

10

Reverse Recovery Time trr (ns)

5

di/dt = 20 A/µs V = 0, Ta = 25°C

GS

0.2 0.5 1 2 5 100.1

Reverse Drain Current I (A)

Dynamic Input Characteristics

50

I = 8 A

D

40

DS

V = 5 V

DD

30

V

DS

10 V 25 V

20

10

V = 25 V

DD

Drain to Source Voltage V (V)

0

4 8 12 16 20

Gate Charge Qg (nc)

DR

V

10 V

5 V

GS

Typical Capacitance vs.

10000

Drain to Source Voltage

3000

1000

300

100

Capacitance C (pF)

30 10

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

16

12

GS

1000

V = 4 V, V = 10 V

GS

PW = 3 µs, duty < 1 %

500

200 100

8

4

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

0

10

0.2 0.5 1 2 5 100.1 Drain Current I (A)

DD

Ciss

Coss

Crss

t

r

t

f

t

d(on)

V = 0

GS

f = 1 MHz

DS

t

d(off)

D

5

HAT2025R

Reverse Drain Current vs.

Souece to Drain Voltage

20

Pulse Test

16

DR

12

s (t)

γ

0.01

10

0.1

8

5 V

V = 0 V

GS

4

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

Normalized Transient Thermal Impedance vs. Pulse Width

D = 1

1

0.5

0.2

0.1

0.05

0.02

0.01

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 83.3 °C/W, Ta = 25 °C

When using the glass epoxy board (FR4 40x40x1.6 mm)

0.001

Normalized Transient Thermal Impedance

1shot pulse

0.0001 10 µ

100 µ 1 m 10 m 100 m 1 10

6

P

Pulse Width PW (S)

DM

PW

D =

T

PW

T

100 1000 10000

Switching Time Test Circuit Switching Time Waveform

R

L

V

DD

= 10 V

Vout Monitor

Vin

Vout

10%

Vin Monitor

Vin 4 V

D.U.T.

50Ω

HAT2025R

90%

10%

td(on)

90%

tr

90%

td(off)

t

f

7

HAT2025R

Package Dimensions

5.0 Max

Unit: mm

8

1

1.27

0.51 Max

5

4

4.0 Max

1.75 Max

0.25 Max

0.15

0.25

M

6.2 Max

0.25 Max 0 – 8°

1.27 Max

Hitachi code

JEDEC

EIAJ

FP–8DA

—

MS-012AA

8

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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