Datasheet HAT2024R-D Datasheet (HIT)

HAT2024R

Silicon N Channel Power MOS FET

High Speed Power Switching

ADE-208-494 C (Z)

4th. Edition

July 1997

Features

• Low on-resistance

• Capable of 4 V gate drive

• Low drive current

• High density mounting

Outline

SOP–8

1

2

3

4

5

6

7

8

G

DSD

G

DSD

MOS1

MOS2

1

2

78

4

5

6

3

1, 3 S 2, 4 G 5, 6, 7, 8 Dra

HAT2024R

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

30 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

5.5 A

Drain peak current I

D(pulse)

*

1

44 A

Body to drain diode reverse drain current

I

DR

5.5 A

Channel dissipation Pch*

2

2W

Channel dissipation Pch *

3

3W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

HAT2024R

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage

V

(BR)DSS

30——V I

D

= 10mA, VGS = 0

Gate to source breakdown voltage

V

(BR)GSS

±20——V I

G

= ±100µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAV

GS

= ±16V, VDS = 0

Zero gate voltege drain current

I

DSS

——10µAV

DS

= 30 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

1.0 — 2.0 V VDS = 10V, I D = 1mA

Static drain to source on state R

DS(on)

— 0.05 0.065 Ω ID = 3A, VGS = 10V*

1

resistance R

DS(on)

— 0.078 0.11 Ω ID = 3A, VGS = 4V*

1

Forward transfer admittance |yfs| 3.5 5.5 — S ID = 3A, VDS = 10V*

1

Input capacitance Ciss — 310 — pF VDS = 10V Output capacitance Coss — 220 — pF VGS = 0 Reverse transfer capacitance Crss — 100 — pF f = 1MHz Turn-on delay time t

d(on)

— 17 — ns VGS = 4V, ID = 3A

Rise time t

r

— 190 — ns VDD ≅ 10V

Turn-off delay time t

d(off)

—25—ns

Fall time t

f

—60—ns

Body to drain diode forward voltage

V

DF

— 0.9 1.4 V IF = 5.5A, VGS = 0*

1

Body to drain diode reverse recovery time

t

rr

— 50 — ns IF = 5.5A, VGS = 0

diF/ dt =20A/µs

Note: 1. Pulse test

HAT2024R

4

Main Characteristics

4.0

3.0

2.0

1.0

0

50 100 150 200

100

30 10

3 1

0.3

0.1

0.03

0.01

0.1

0.3 1 3 10 30 100

20

16

12

8

4

0

246810

10V

20

16

12

8

4

0

2468

10

10 µs

100 µs

1 ms

PW = 10 ms

8 V

6 V

4.5 V

4 V

3.5 V

3 V

V = 2.5 V

GS

5 V

Tc = 75°C

25°C

–25°C

V = 10 V Pulse Test

DS

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm)

2 Drive Operation

1 Drive Operation

Operation in this area is limited by R

DS(on)

Pulse Test

Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s

Note5

DC Operation (PW < 10 s)

Ta = 25°C 1 shot Pulse 1 Drive Operation

HAT2024R

5

0.5

0.4

0.3

0.2

0.1

0

0.5

0.2

0.05

0.1

0.02

1

0.01

0.2 0.5 1 2 5 10 20

0.20

0.16

0.12

0.08

0.04

–40 0 40 80 120 160

0

0.2 0.5

1

2 5 10 20

5

2

0.5

1

0.2

10

0.1

20

25 °C

Tc = –25 °C

75 °C

DS

V = 10 V Pulse Test

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R ( )

W

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

W

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

Drain Current I (A)

D

Pulse Test

I = 5 A

D

1 A

2 A

I = 5 A

D

1 A, 2 A, 5 A

V = 4 V

GS

10 V

2 A

1 A

246810

HAT2024R

6

0.2 0.5 1 2 5 100.1

500

200

100

20

50

10

5

01020304050

1000

200

100

20 10

50

40

30

20

10

0

20

16

12

8

4

246810

0

di/dt = 20 A/µs V = 0, Ta = 25°C

GS

500

50

Ciss

Coss

Crss

V = 0 f = 1 MHz

GS

V

GS

V

DS

I = 5.5 A

D

V = 5 V

10 V 20 V

DD

V = 20 V

10 V

5 V

DD

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs. Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

20

16

12

8

4

0

0.4 0.8 1.2 1.6 2.0

0, –5 V

V = 5 V

GS

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Souece to Drain Voltage

Pulse Test

HAT2024R

7

Vin Monitor

D.U.T.

Vin 4 V

R

L

V = 10 V

DD

tr

td(on)

Vin

90%

10%

Vout

td(off)

Vout Monitor

50W

90%

10%

t

f

Switching Time Test Circuit Switching Time Waveform

10

0.2 0.5 1 2 5 100.1

500

200

100

20

50

5

V = 4 V, V = 10 V PW = 3 µs, duty < 1 %

GS

DD

t

f

r

t

d(off)

t

d(on)

t

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

HAT2024R

8

10 µ

100 µ 1 m 10 m 100 m 1 10

100 1000 10000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

g

DM

P

PW

T

D =

PW

T

ch – f(t) = s (t) • ch – f ch – f = 125 °C/W, Ta = 25 °C

q g q q

When using the glass epoxy board (FR4 40x40x1.6 mm)

10 µ

100 µ 1 m 10 m 100 m 1 10

100 1000 10000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

g

DM

P

PW

T

D =

PW

T

ch – f(t) = s (t) • ch – f ch – f = 166 °C/W, Ta = 25 °C

q g q q

When using the glass epoxy board (FR4 40x40x1.6 mm)

HAT2024R

9

Package Dimensions

Unit: mm

1.75 Max

4.0 Max

M

8

5

1

4

5.0 Max

6.2 Max

1.27

0.15 Hitachi code

EIAJ

JEDEC

FP–8DA

—

MS-012AA

0.25 Max

1.27 Max

0.51 Max

0.25

0 – 8°

HAT2024R

10

Cautions

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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