Datasheet HAT2022R Datasheet (HIT)

Silicon N Channel Power MOS FET

Features

• Low on-resistance

• Capable of 4 V gate drive

• Low drive current

• High density mounting

Outline

HAT2022R

High Speed Power Switching

ADE-208-440 J (Z)

11th Edition

February 1999

SOP–8

4

G

56 7 8 D

D

DD

SSS 1

23

5

6

7

8

2

1

1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

4

3

HAT2022R

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V Gate to source breakdown voltage V Gate to source leak current I Zero gate voltege drain current I Gate to source cutoff voltage V Static drain to source on state R resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

Forward transfer admittance |yfs|1218—S ID = 6 A, VDS = 10 V Input capacitance Ciss — 1450 — pF VDS = 10 V Output capacitance Coss — 950 — pF VGS = 0 Reverse transfer capacitance Crss — 380 — pF f = 1MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time Note: 3. Pulse test

30——V I ± 20 — — V IG = ± 100 µA, VDS = 0 ——± 10 µAVGS = ± 16 V, VDS = 0 ——10µAVDS = 30 V, VGS = 0

1.0 — 2.0 V VDS = 10 V, I D = 1 mA — 0.012 0.015 Ω ID = 6 A, VGS = 10 V — 0.017 0.025 Ω ID = 6 A, VGS = 4 V

— 60 — ns VGS = 4 V, ID = 6 A — 450 — ns VDD ≅ 10 V —80—ns — 160 — ns — 0.8 1.3 V IF = 11 A, VGS = 0 — 70 — ns IF = 11 A, VGS = 0

30 V ± 20 V 11 A 88 A 11 A

2.5 W

= 10 mA, VGS = 0

D

diF/ dt = 20 A/µs

Note3

2

Main Characteristics

HAT2022R

Power vs. Temperature Derating

4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

50

10V

6 V

40

5 V

D

4.5 V

30

4 V

Pulse Test

3.5 V

100

Maximum Safe Operation Area

30 10

D

DC Operation (PW < 10 s)

3 1

Operation in

0.3

this area is

0.1

0.03

0.01

0.1

limited by R

Ta = 25 °C 1 shot Pulse

0.3 1 3 10 30 100

Drain Current I (A)

DS(on)

Drain to Source Voltage V (V)

Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm)

Typical Transfer Characteristics

20

V = 10 V

DS

Pulse Test

16

D

12

1 ms

PW = 10 ms

Note 4

10 µs

100 µs

DS

20

Drain Current I (A)

10

V = 2.5 V

GS

0

246810

Drain to Source Voltage V (V)

3 V

DS

8

Drain Current I (A)

4

0

Tc = 75°C

1234

Gate to Source Voltage V (V)

25°C

–25°C

5

GS

3

HAT2022R

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5

0.4

DS(on)

Pulse Test

0.3

0.2 I = 10 A

D

0.1

Drain to Source Voltage V (V)

0

246810

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.05

Ω

Pulse Test

0.04

GS

5 A 2 A

Static Drain to Source on State Resistance

vs. Drain Current

0.2

Pulse Test

Ω

0.1

0.05

DS(on)

R ( )

V = 4 V

0.02

0.01

0.005

Drain to Source On State Resistance

0.002

GS

10 V

0.5 1 2 5 10 20 50 Drain Current I (A)

D

Forward Transfer Admittance vs.

50

20

Drain Current

Tc = –25 °C

DS(on)

R ( )

0.03

0.02

0.01

V = 4 V

GS

I = 2 A, 5 A, 10 A

D

10 V

2 A, 5 A, 10 A

0

–40 0 40 80 120 160

Static Drain to Source on State Resistance

Case Temperature Tc (°C)

4

10

25 °C

5

75 °C

2

1

0.5

Forward Transfer Admittance |yfs| (S)

0.2 0.5

1

Drain Current I (A)

V = 10 V

DS

Pulse Test

2 5 10 20

D

HAT2022R

Body–Drain Diode Reverse

Recovery Time

500

200

100

50

20

10

Reverse Recovery Time trr (ns)

5

di/dt = 20 A/µs V = 0, Ta = 25°C

GS

0.2 0.5 1 2 5 10 20 Reverse Drain Current I (A)

DR

Typical Capacitance vs. Drain to Source Voltage

10000

3000

Ciss

1000

300

100

Capacitance C (pF)

30 10

Coss Crss

V = 0

GS

f = 1 MHz

01020304050

Drain to Source Voltage V (V)

DS

50

Dynamic Input Characteristics

I = 11 A

D

DS

40

V = 5 V

DD

10 V 25 V

30

V

DS

V

GS

20

10

Drain to Source Voltage V (V)

0

V = 25 V

DD

10 V

5 V

20 40 60 80 100

Gate Charge Qg (nc)

20

1000

Switching Characteristics

500

16

GS

200

12

100

8

4

Gate to Source Voltage V (V)

0

50

Switching Time t (ns)

20

V = 4 V, V = 10 V

GS

PW = 3 µs, duty < 1 %

10

0.2 0.5 1 2 5 10 20 Drain Current I (A)

DD

t

r

t

f

t

d(off)

t

d(on)

D

5

HAT2022R

Reverse Drain Current vs.

Souece to Drain Voltage

50

Pulse Test

40

DR

30

s (t)

γ

0.1

0.01

10

20

5 V

V = 0, –5 V

GS

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

Normalized Transient Thermal Impedance vs. Pulse Width

D = 1

1

0.5

0.2

0.1

0.05

0.02

0.01

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 83.3 °C/W, Ta = 25 °C

When using the glass epoxy board (FR4 40x40x1.6 mm)

0.001

Normalized Transient Thermal Impedance

1shot pulse

0.0001 10 µ

100 µ 1 m 10 m 100 m 1 10

6

P

DM

Pulse Width PW (S)

PW

D =

T

PW

T

100 1000 10000

Switching Time Test Circuit Switching Time Waveform

R

L

V

DD

= 10 V

Vout Monitor

Vin

Vout

10%

Vin Monitor

Vin 4 V

D.U.T.

50Ω

HAT2022R

90%

10%

td(on)

90%

tr

90%

td(off)

t

f

7

HAT2022R

Package Dimensions

5.0 Max

Unit: mm

8

1

1.27

0.51 Max

5

4

4.0 Max

1.75 Max

0.25 Max

0.15

0.25

M

6.2 Max

0.25 Max 0 – 8°

1.27 Max

Hitachi code

JEDEC

EIAJ

FP–8DA

—

MS-012AA

8

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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