Datasheet HAT2016R-D Datasheet (HIT)

HAT2016R

Silicon N Channel Power MOS FET

High Speed Power Switching

ADE-208-438 H (Z)

9th. Edition

June 1997

Features

• Low on-resistance

• Capable of 4 V gate drive

• Low drive current

• High density mounting

Outline

SOP–8

1

2

3

4

5

6

7

8

G

DSD

G

DSD

MOS1

MOS2

1

2

78

4

5

6

3

1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain

HAT2016R

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

30 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

6.5 A

Drain peak current I

D(pulse)

Note1

52 A

Body-drain diode reverse drain current I

DR

6.5 A

Channel dissipation Pch

Note2

2W

Channel dissipation Pch

Note3

3W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

HAT2016R

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage

V

(BR)DSS

30——V I

D

= 10mA, VGS = 0

Gate to source breakdown voltage

V

(BR)GSS

±20——V I

G

= ±100µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAV

GS

= ±16V, VDS = 0

Zero gate voltege drain current I

DSS

——10µAV

DS

= 30 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

1.0 — 2.0 V VDS = 10V, I D = 1mA

Static drain to source on state R

DS(on)

— 0.03 0.045 Ω ID = 4A, VGS = 10V

Note4

resistance R

DS(on)

— 0.05 0.08 Ω ID = 4A, VGS = 4V

Note4

Forward transfer admittance |yfs| 58—SI

D

= 4A, VDS = 10V

Note4

Input capacitance Ciss — 560 — pF VDS = 10V Output capacitance Coss — 380 — pF VGS = 0 Reverse transfer capacitance Crss — 170 — pF f = 1MHz Turn-on delay time t

d(on)

— 30 — ns VGS = 4V, ID = 4A

Rise time t

r

— 270 — ns VDD ≅ 10V

Turn-off delay time t

d(off)

—40—ns

Fall time t

f

—65—ns

Body–drain diode forward voltage

V

DF

— 0.9 1.4 V IF = 6.5A, VGS = 0

Note4

Body–drain diode reverse recovery time

t

rr

— 45 — ns IF = 6.5A, VGS = 0

diF/ dt =20A/µs

Note: 4. Pulse test

HAT2016R

4

Main Characteristics

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm)

4.0

3.0

2.0

1.0

0

50 100 150 200

100

30 10

3 1

0.3

0.1

0.03

0.01

0.1

0.3 1 3 10 30 100

10 µs

100 µs

1 ms

PW = 10 ms

20

16

12

8

4

0

246810

10 V

6 V

3 V

4.5 V

3.5 V

V = 2.5 V

GS

4 V

5 V

20

16

12

8

4

0

1234

5

Tc = –25 °C

75 °C

25 °C

2 Drive Operation

1 Drive Operation

Operation in this area is limited by R

DS(on)

Pulse Test

V = 10 V Pulse Test

DS

Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s

Note 5

DC Operation (PW < 10 s)

Ta = 25 °C 1 shot Pulse 1 Drive Operation

HAT2016R

5

Gate to Source Voltage V (V)

GS

Drain to Source Voltage V (V)

DS(on)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R ( )

Ω

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance |yfs| (S)

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

0.5

0.4

0.3

0.2

0.1

0

246810

2 A 1 A

I = 5 A

D

0.2

0.5

1

2

51020

0.5

0.2

0.1

0.02

0.05

0.01

0.005

10 V

V = 4 V

GS

0.10

0.08

0.06

0.04

0.02

–40 0 40 80 120 160

0

I = 1 A, 2 A, 5 A

D

1 A, 2 A, 5 A

10 V

V = 4 V

GS

0.2

0.5 1 2

510

20

10

2

5

1

0.2

0.5

25 °C

Tc = –25 °C

75 °C

Pulse Test

DS

V = 10 V Pulse Test

HAT2016R

6

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs. Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

0.2 0.5 1 2 5 10 20

500

200

100

20

50

10

5

di/dt = 20 A/µs V = 0, Ta = 25°C

GS

0 10 20 30 40 50

10000

3000

1000

300

100

30

10

Ciss

Coss Crss

V = 0 f = 1 MHz

GS

50

40

30

20

10

0

20

16

12

8

4

816243240

0

V

GS

V

DS

V = 5 V

10 V 25 V

DD

V = 25 V

10 V

5 V

DD

I = 6.5 A

D

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Souece to Drain Voltage

20

16

12

8

4

0

0.4 0.8 1.2 1.6 2.0

V = 0, –5 V

GS

5 V

Pulse Test

HAT2016R

7

Vin Monitor

D.U.T.

Vin 4 V

R

L

V = 10 V

DD

tr

td(on)

Vin

90%

10%

Vout

td(off)

Vout Monitor

50Ω

90%

10%

t

f

Switching Time Test Circuit Switching Time Waveform

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

1000

200

500

100

20

50

10

0.2 0.5 1 2 5 100.1

V = 4 V, V = 10 V PW = 3 µs, duty < 1 %

GS

DD

t

f

r

t

d(on)

t

d(off)

t

HAT2016R

8

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

γ

10 µ

100 µ 1 m 10 m 100 m 1 10

100 1000 1000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

DM

P

PW

T

D =

PW

T

ch – f(t) = s (t) • ch – f ch – f = 125 °C/W, Ta = 25 °C

θ γ θ θ

When using the glass epoxy board (FR4 40x40x1.6 mm)

10 µ

100 µ 1 m 10 m 100 m 1 10

100 1000 1000

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

γ

10 µ

100 µ 1 m 10 m 100 m 1 10

100 1000 1000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

DM

P

PW T

D =

PW

T

ch – f(t) = s (t) • ch – f ch – f = 166 °C/W, Ta = 25 °C

θ γ θ θ

When using the glass epoxy board (FR4 40x40x1.6 mm)

HAT2016R

9

Package Dimensions

Unit: mm

1.75 Max

4.0 Max

M

8

5

1

4

5.0 Max

6.2 Max

1.27

0.15 Hitachi code

EIAJ

JEDEC

FP–8DA

—

MS-012AA

0.25 Max

1.27 Max

0.51 Max

0.25

0 – 8°

HAT2016R

10

Cautions

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