Datasheet HAT1043M Datasheet (HIT)

HAT1043M

Silicon P Channel Power MOS FET

Power Switching

Features

• Low on-resistance

• Low drive current

• High density mounting

• 2.5 V gate drive device can be driven from 3 V source

Outline

ADE-208-754D (Z)

5th Edition

February 1999

TSOP–6

3

G

12 5 6 DSD

DD

4

5

6

1

4 Source 3 Gate 1, 2, 5, 6 Drain

3

2

HAT1043M

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Pch

Note 2

(pulse)

(continuous)

Note 1

Note 2

Note 3

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW ≤ 5 s, Ta = 25°C

3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V Gate to source leak current I Zero gate voltege drain current I Gate to source cutoff voltage V Static drain to source on state R

(BR)DSS

GSS

DSS

GS(off)

DS(on)

resistance — 85 110 mΩ ID = –3 A, VGS = –2.5 V Forward transfer admittance |yfs|47—SI Input capacitance Ciss — 750 — pF VDS = –10 V Output capacitance Coss — 310 — pF VGS = 0 Reverse transfer capacitance Crss — 220 — pF f = 1 MHz Total Gate charge Qg — 11 — nc VDD = –10 V Gate to Source charge Qgs — 2 — nc VGS = –4.5 V Gate to Drain charge Qgd — 3.5 — nc ID= –4.4 A Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time Note: 1. Pulse test

–20 — — V ID = –10 mA, VGS = 0 ——±0.1 µAVGS = ±12 V, VDS = 0 ——–1µAVDS = –20 V, VGS = 0 –0.4 — –1.4 V ID = –1 mA, VDS = –10 V —5565mΩ ID = –3 A, VGS = –4.5 V

— 15 — ns VGS = –4.5 V, ID = –3 A — 100 — ns RL = 3.3 Ω —85—ns — 100 — ns — –0.95 –1.23 V IF = –4.4 A, VGS = 0 — 50 — ns IF = –4.4 A, VGS = 0

–20 V ±12 V –4.4 A –17.6 A –4.4 A

2.0 W

1.05 W

= –3 A, VDS = –10 V

D

diF/ dt = –20 A/ µs

Note 1

2

Main Characteristics

HAT1043M

Power vs. Temperature Derating

2.0

1.5

1.0

0.5

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C) Test Condition When using the alumina ceramic board (50x50x0.7mm),(PW ≤ 5s)

Typical Output Characteristics

-10

-10 V

-4 V

-8

D

-3 V

-2.5 V

-6

Pulse Test

-2 V

-100

Maximum Safe Operation Area

-30

-10

D

-3

PW = 10 ms (1 shot)

DC Operation (PW ≤ 5s)

10 µs

1 ms

100 µs

-1

-0.3

Operation in

-0.1

-0.03

-0.01

this area is limited by R

Ta = 25°C 1 shot pulse

DS(on)

Drain Current I (A)

-0.1 -0.3 -1 Drain to Source Voltage V (V)

-3

Note1

-10

-30

DS

Note 1 When using the alumina ceramic board ( 50x50x0.7mm)

Typical Transfer Characteristics

-10 V = -10 V

DS

Pulse Test

-8

D

-6

-100

-4

Drain Current I (A)

-2

0

-2 -4 -6 -8 -10

Drain to Source Voltage V (V)

V = -1.5 V

GS

DS

-4

Drain Current I (A)

-2

Tc = –25°C

75°C

25°C

0

-1 -2 -3 -4 -5

Gate to Source Voltage V (V)

GS

3

HAT1043M

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

-0.5 Pulse Test

-0.4

DS(on)

V (V)

-0.3

I = -5 A

D

-0.2

-12

-2 A

-1 A

-16 -20

GS

-0.1

Drain to Source Saturation Voltage

0

-4 -8

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

250

Ω

Pulse Test

200

DS(on)

R (m )

150

100

50

-2.5 V

I = -5 A

D

V = -4.5 V

GS

-5 A

-1, -2 A

0

Static Drain to Source on State Resistance

–50 0 50 100 150 200

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

1000

Ω

Pulse Test

500

DS(on)

200

R (m )

100

V = -2.5 V

GS

50

-4.5 V

20

Drain to Source On State Resistance

10

-0.1

-0.2 Drain Current I (A)

-2 -10

-1

D

Forward Transfer Admittance vs.

Drain Current

50

V = -10 V

20 10

DS

Pulse Test

Tc = –25 °C

fs

5

25 °C

2 1

75 °C

0.5

0.2

Forward Transfer Admittance |y | (S)

0.1

-0.1 -0.3 -1 -3 -10 -30 -50 Drain Current I (A)

D

-5-0.5

-20

4

HAT1043M

Body–Drain Diode Reverse

Recovery Time

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

di / dt = 20 A / µs V = 0, Ta = 25 °C

GS

-0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I (A)

Dynamic Input Characteristics

0

V = - 5 V

DD

DS

-10

-20

V

DS

-10 V

-20 V

DR

3000

1000

300

100

Capacitance C (pF)

0

1000

500

-2

GS

200

-4

100

Typical Capacitance vs. Drain to Source Voltage

V = 0

GS

f = 1 MHz

Ciss

Coss

Crss

30

10

0 -4 -8 -12 -16 -20

Drain to Source Voltage V (V)

DS

Switching Characteristics

t

r

t

f

V = - 5 V

-30

DD

-10 V

-20 V

-40 I = -4.4 A

D

Collector to Emitter Voltage V (V)

-50

0

4 8 12 16 20

Gate Charge Qg (nc)

V

GS

-6

-8

Gate to Emitter Voltage V (V)

-10

50

t

d(on)

20

Switching Time t (ns)

10

V = -4.5 V, V = -10 V

GS

PW = 5 µs, duty < 1 %

-0.1 -0.2 -2

-0.5

Drain Current I (A)

t

d(off)

DD

-10

-1

-5

D

-20

5

HAT1043M

F

-10

-8

-6

-4

-2

Reverse Drain Current vs.

Source to Drain Voltage

-5 V

V = 0, 5 V

GS

Reverse Drain Current I (A)

0

-0.4 -0.8 -1.2 -1.6 -2.0

Source to Drain Voltage V (V)

Pulse Test

SDF

Switching Time Test Circuit Switching Time Waveform

R

L

V

DD

= 10 V

Vout Monitor

Vin

Vout

td(on)

10%

90%

tr

td(off)

Vin Monitor

Vin 10 V

D.U.T.

50Ω

90%

10%

t

f

6

HAT1043M

10

D = 1

s (t)

γ

1

0.5

0.2

0.1

0.05

0.02

0.01

0.001

Normalized Transient Thermal Impedance

0.0001

1shot pulse

10 µ

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 1 m 10 m 100 m 1 10

Pulse Width PW (S)

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 119 °C/W, Ta = 25 °C

When using the alumina ceramic board (50x50x0.7 mm)

P

DM

PW T

100 1000 10000

D =

PW

T

7

HAT1043M

Package Dimensions

0.3±0.1

0.6

0.15

+ 0.10 – 0.05

Unit: mm

1.0

2.95

1.0

±0.15

1.6

0.6

0.2

2.8±0.2

±0.1

0.9

0 ~ 0.1

Hitachi Code

EIAJ

JEDEC

TSOP-6

-

8

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

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