Datasheet HAT1038RJ, HAT1038R-D Datasheet (HIT)

HAT1038R/HAT1038RJ

Silicon P Channel Power MOS FET

High Speed Power Switching

ADE-208-663C (Z)

4th. Edition

February 1999

Features

• For Automotive Application ( at Type Code “J “)

• Low on-resistance

• Capable of 4 V gate drive

• High density mounting

Outline

SOP–8

1

2

3

4

5

6

7

8

G

DSD

G

DSD

MOS1

MOS2

1

2

78

4

5

6

3

1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain

HAT1038R/HAT1038RJ

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

– 60 V

Gate to source voltage V

GSS

± 20 V

Drain current I

D

– 3.5 A

Drain peak current I

D(pulse)

Note1

– 28 A

Body-drain diode reverse drain current I

DR

– 3.5 A

Avalanche current HAT1038R I

AP

Note4

——

HAT1038RJ – 3.5 A

Avalanche energy HAT1038R E

AR

Note4

——

HAT1038RJ 1.05 mJ

Channel dissipation Pch

Note2

2W

Channel dissipation Pch

Note3

3W Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s

4. Value at Tch = 25°C, Rg ≥ 50 Ω

HAT1038R/HAT1038RJ

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

– 60 — — V ID = – 10 mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

± 20 — — V IG = ± 100 µA, VDS = 0

Gate to source leak current I

GSS

——± 10 µAVGS = ± 16 V, VDS = 0

Zero gate voltage HAT1038R I

DSS

— — – 1 µAVDS = – 60 V, VGS = 0

drain current HAT1038RJ I

DSS

— — – 0.1 µA

Zero gate voltage HAT1038R I

DSS

———µAVDS = – 48 V, VGS = 0

drain current HAT1038RJ I

DSS

— — –10 µA Ta=125°C

Gate to source cutoff voltage V

GS(off)

– 1.2 — – 2.2 V VDS = – 10 V, I D = – 1 mA

Static drain to source on state R

DS(on)

— 0.12 0.15 Ω ID = – 2 A, VGS = – 10 V

Note5

resistance R

DS(on)

— 0.16 0.23 Ω ID = – 2 A, VGS = – 4 V

Note5

Forward transfer admittance |yfs| 3 4.5 — S ID = – 2 A, VDS = – 10 V

Note5

Input capacitance Ciss — 600 — pF VDS = –10 V Output capacitance Coss — 290 — pF VGS = 0 Reverse transfer capacitance Crss — 75 — pF f = 1MHz Turn-on delay time t

d(on)

— 11 — ns VGS = –10 V, ID = – 2 A

Rise time t

r

— 30 — ns VDD ≅ – 30 V

Turn-off delay time t

d(off)

— 100 — ns

Fall time t

f

—55—ns

Body–drain diode forward voltage V

DF

— – 0.98 – 1.28 V IF = – 3. 5 A, VGS = 0

Note5

Body–drain diode reverse recovery time

t

rr

— 70 — ns IF = – 3. 5 A, VGS = 0

diF/ dt = 50A/µs

Note: 5. Pulse test

HAT1038R/HAT1038RJ

4

Main Characteristics

4.0

3.0

2.0

1.0

0

50 100 150 200

–10

–3

–1 –0.3 –0.1

–0.03 –0.01

–0.1 –0.3 –1 –3 –10

–10

–8

–6

–4

–2

0

–2 –4 –6 –8 –10

–5 V

–4 V

0 –1–2–3–4–5

–30 –100

–100

–30

–10 V

–3.5 V

–3 V

–10

–8

–6

–4

–2

–25 °C

25 °C

Tc = 75 °C

V = –2.5 V

GS

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

2 Drive Operation

1 Drive Operation

Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s

Ta = 25 °C 1 shot pulse

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Operation in this area is limited by R

DS(on)

Note 6

DC Operation (PW < 10 s)

100 µs

10 µs

1 ms

PW = 10 ms

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Pulse Test

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

V = 10 V Pulse Test

DS

Note 6 : When using the glass epoxy board (FR4 40x40x1.6 mm)

HAT1038R/HAT1038RJ

5

–0.5

–0.4

–0.3

–0.2

–0.1

0

–4 –8 –12 –16 –20

0.5

0.4

0.3

0.2

0.1

–40 0 40 80 120 160

0

–10 V

I = –2 A

D

GS

V = –4 V

–0.1 –1 –10

0.2

10

20

5

1

0.5

–0.2 –0.5 –2 –5

1

0.5

0.05

0.02

0.01

–0.1 –0.3 –1 –3 –10 –30 –100

–0.5, –1 A

I = –2 A

D

–1 A –0.5 A

0.2

0.1

–10 V

V = –4 V

GS

–0.5 A

–1 A

–2 A

2

75 °C

25 °C

Ta = –25 °C

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Pulse Test

Drain Current I (A)

D

Drain to Source On State Resistance

R ( )

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Pulse Test

Ω

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

V = 10 V Pulse Test

DS

HAT1038R/HAT1038RJ

6

500

200

100

20

50

10

5

–0.1 –0.2 –1 –5 –10

0 –10 –20 –30 –40 –50

2000

1000

500

200 100

50

0

–20

–40

–60

–80

0

–4

–8

–12

–16

–20–100

81624

32

40

1000

100

300

30

3

10

1

–0.1 –0.2 –0.5 –1 –2 –5

–10

–0.5 –2

di / dt = 50 A / µs V = 0, Ta = 25 °C

GS

20 10

V = 0 f = 1 MHz

GS

Ciss

Coss

Crss

DS

V

GS

V

V = –50 V

–25 V –10 V

DD

D

I = –3.5 A

V = –10 V

–25 V –50 V

DD

t

f

r

t

d(off)

t

d(on)

t

DD

V = –10 V, V = –30 V Pw = 5 µs, duty < 1 %

GS

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs. Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

HAT1038R/HAT1038RJ

7

–10

–8

–6

–4

–2

0

–0.4 –0.8 –1.2 –1.6 –2.0

V = 0, 5 V

GS

–10 V

–5 V

2.5

2.0

1.5

1.0

0.5

25 50 75 100 125 150

0

I = –3.5 A V = –25 V L = 100 µH duty < 0.1 % Rg > 50

AP

DD

Ω

D. U. T

Rg

I Monitor

AP

V Monitor

DS

V

DD

50Ω

Vin

-15 V 0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1

V

V – V

AR

AP

DSS

DSS DD

2

Vin Monitor

D.U.T.

Vin

-10 V

R

L

V = –30 V

DD

tr

td(on)

Vin

90%

10%

Vout

td(off)

Vout Monitor

50Ω

90%

10%

t

f

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

Channel Temperature Tch (°C)

Repetive Avalanche Energy E (mJ)

AR

Maximun Avalanche Energy vs.

Channel Temperature Derating

Avalanche Waveform

Switching Time Waveform

Avalanche Test Circuit

Switching Time Test Circuit

HAT1038R/HAT1038RJ

8

10 µ

100 µ 1 m 10 m 100 m 1 10

100 1000 10000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

10 µ

100 µ 1 m 10 m 100 m 1 10

100 1000 10000

10

1

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

γ

DM

P

PW

T

D =

PW

T

ch – f(t) = s (t) • ch – f ch – f = 125 °C/W, Ta = 25 °C

θ γ θ θ

When using the glass epoxy board (FR4 40x40x1.6 mm)

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

γ

DM

P

PW

T

D =

PW

T

ch – f(t) = s (t) • ch – f ch – f = 166 °C/W, Ta = 25 °C

θ γ θ θ

When using the glass epoxy board (FR4 40x40x1.6 mm)

HAT1038R/HAT1038RJ

9

Package Dimensions

Unit: mm

1.75 Max

4.0 Max

M

8

5

1

4

5.0 Max

6.2 Max

1.27

0.15 Hitachi code

EIAJ

JEDEC

FP–8DA

—

MS-012AA

0.25 Max

1.27 Max

0.51 Max

0.25

0 – 8°

Cautions

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

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