Datasheet HAT1036R Datasheet (HIT)

Silicon P Channel Power MOS FET

Features

• Low on-resistance

R

= 11 mΩ typ

DS(on)

• Capable of -4 V gate drive

• Low drive current

• High density mounting

Outline

HAT1036R

Power Switching

ADE-208-662D (Z)

5th. Edition

February 1999

SOP–8

4

G

56 7 8 D

D

DD

SSS 1

23

5

6

7

8

2

1

1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

4

3

HAT1036R

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note2

Note1

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V Gate to source leak current I Zero gate voltege drain current I Gate to source cutoff voltage V Static drain to source on state R resistance R

(BR)DSS

GSS

DSS

GS(off)

DS(on)

Forward transfer admittance |yfs|1220—S ID = -6 A, VDS = -10 V Input capacitance Ciss — 4200 — pF VDS = -10 V Output capacitance Coss — 870 — pF VGS = 0 Reverse transfer capacitance Crss — 360 — pF f = 1 MHz Total gate charge Qg — 70 — nc VDD = -10 V Gate to source charge Qgs — 12 — nc VGS = -10 V Gate to drain charge Qgd — 14 — nc ID = -12 A Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time Note: 1. Pulse test

-30 — — V ID = -10 mA, VGS = 0 ——±0.1 µAVGS = ±20 V, VDS = 0 ——-1µAVDS = -30 V, VGS = 0

-1.0 — -2.5 V VDS = -10 V, I D = -1 mA —1114mΩ ID = -6 A, VGS = -10 V —2134mΩ ID = -6 A, VGS = -4 V

— 120 — ns VGS = -4 V, ID = -6 A — 350 — ns VDD ≅ -10 V — 100 — ns — 120 — ns — -0.85 -1.11 V IF = -12 A, VGS = 0 — 55 — ns IF = -12 A, VGS = 0

-30 V ±20 V

-12 A

-96 A

-12 A

2.5 W

diF/ dt = 20 A/ µs

Note1

2

Main Characteristics

HAT1036R

Power vs. Temperature Derating

4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

-50

-40

-10V

-5 V

-4 V Pulse Test

-500

Maximum Safe Operation Area

-100

D

-10

-1

DC Operation (PW < 10 s)

Operation in this area is

Drain Current I (A)

limited by R

-0.1

DS(on)

Ta = 25 °C 1 shot Pulse

-0.01

-0.1

-0.3 -1 -3 -10 -30 -100

Drain to Source Voltage V (V) Note 4 :

When using the glass epoxy board (FR4 40x40x1.6 mm)

Typical Transfer Characteristics

-50 V = -10 V

DS

Pulse Test

-40

10 µs

100 µs

1 ms

PW = 10 ms

Note 4

DS

D

-30

-20

Drain Current I (A)

-10

0

-2 -4 -6 -8 -10

V = -3 V

GS

Drain to Source Voltage V (V)

-3.5 V

DS

D

-30

-20

Drain Current I (A)

-10

0

Tc = 75°C

-1 -2 -3 -4

Gate to Source Voltage V (V)

25°C

–25°C

-5

GS

3

HAT1036R

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

-0.5

-0.4

DS(on)

Pulse Test

-0.3

-0.2

I = -10 A

-0.1

D

Drain to Source Voltage V (V)

0

-4 -8 -12 -16 -20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

50

Ω

Pulse Test

40

I = -2 A, -5 A, -10 A

DS(on)

R (m )

30

V = -4 V

GS

D

20

-5 A

-2 A

GS

Static Drain to Source on State Resistance

vs. Drain Current

100

Pulse Test

Ω

50

V = -4 V

20

DS(on)

R (m )

10

GS

-10 V

5

2

Drain to Source On State Resistance

1

-0.1

-0.2

-1 -10 -100

-0.5 -2 -5 -20 Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

100

30

Tc = –25 °C

10

75 °C

3

25 °C

1

-50

10

-10 V

0

–40 0 40 80 120 160

Static Drain to Source on State Resistance

Case Temperature Tc (°C)

4

-2 A, -5 A, -10 A

0.3

0.1

Forward Transfer Admittance |yfs| (S)

-0.1

-0.3

-1 -10 -100

Drain Current I (A)

V = -10 V

DS

Pulse Test

-3 -30

D

HAT1036R

Body–Drain Diode Reverse

Recovery Time

100

50

20

di/dt = 20 A/µs

Reverse Recovery Time trr (ns)

10

-0.2 -0.5 -1 -2 -5 -10 -20

-0.1

V = 0, Ta = 25°C

GS

Reverse Drain Current I (A)

DR

Typical Capacitance vs. Drain to Source Voltage

10000

Ciss

3000

1000

300

100

Capacitance C (pF)

Coss

Crss

30 10

0 -10 -20 -30 -40 -50

Drain to Source Voltage V (V)

V = 0

GS

f = 1 MHz

DS

Dynamic Input Characteristics

0

V = –5 V

DD

–10 V

DS

–10

–25 V

–20

V

DS

–30

V = –25 V

DD

–40

Drain to Source Voltage V (V)

–50

0

–10 V

–5 V

I = –12 A

D

40 80 120 160 200

V

GS

Gate Charge Qg (nc)

0

1000

Switching Characteristics

500

–4

GS

200

–8

100

t

d(on)

–12

–16

–20

50

Switching Time t (ns)

20

V = -4 V, V = -10 V

Gate to Source Voltage V (V)

GS

RG = 50 , duty < 1 %

10

Ω

-0.2 -0.5 -1 -2 -5 -10 -20-0.1 Drain Current I (A)

DS

t

r

t

f

t

d(off)

D

5

HAT1036R

DR

50

40

30

20

10

Reverse Drain Current vs.

Souece to Drain Voltage

-10 V

-5 V

V = 0

GS

Reverse Drain Current I (A)

0

-0.4 -0.8 -1.2 -1.6 -2.0

Source to Drain Voltage V (V)

Normalized Transient Thermal Impedance vs. Pulse Width

10

s (t)

γ

D = 1

1

0.5

0.2

0.1

0.05

0.01

0.02

0.01

0.001

Normalized Transient Thermal Impedance

1shot pulse

0.0001 10 µ

100 µ 1 m 10 m 100 m 1 10

Pulse Test

SD

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 83.3 °C/W, Ta = 25 °C

When using the glass epoxy board (FR4 40x40x1.6 mm)

P

DM

Pulse Width PW (S)

PW

D =

T

PW

T

100 1000 1000

6

Switching Time Test Circuit Switching Time Waveforms

HAT1036R

Vin Monitor

Vin –4 V

50Ω

D.U.T.

Vout Monitor

R

L

V

DD

= –10 V

Vin

Vout

td(on)

10%

90%

tr

td(off)

90%

10%

t

f

7

HAT1036R

Package Dimensions

5.0 Max

Unit: mm

8

1

1.27

0.51 Max

5

4

4.0 Max

1.75 Max

0.25 Max

0.15

0.25

M

6.2 Max

0.25 Max 0 – 8°

1.27 Max

Hitachi code

JEDEC

EIAJ

FP–8DA

—

MS-012AA

8

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223

Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533

Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX