Datasheet HAT1033T Datasheet (HIT)

Silicon P Channel Power MOS FET

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

HAT1033T

High Speed Power Switching

ADE-208-532H (Z)

9th. Edition

February 1999

TSSOP–8

4
G

1
D

S
2

8

5

DD

S

S6S

3

5

6

7

8

4

3

2

1

1, 5, 8 Drain
2, 3, 6, 7 Source

7

4 Gate

HAT1033T

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body–drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdow voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 5 8.0 — S ID = – 2 A, VDS = – 10 V
Input capacitance Ciss — 970 — pF VDS = – 10 V
Output capacitance Coss — 510 — pF VGS = 0
Reverse transfer capacitance Crss — 150 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

– 20 — — V ID = – 10 mA, VGS = 0
± 10 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 8 V, VDS = 0
——– 1µAVDS = – 20 V, VGS = 0
– 0.4 — – 1.4 V VDS = – 10 V, I D = – 1 mA
— 0.046 0.063 Ω ID = – 2 A, VGS = – 4 V
— 0.061 0.090 Ω ID = – 2 A, VGS = – 2.5 V

— 16 — ns VGS = – 4 V, ID = – 2 A
— 100 — ns VDD ≅ – 10 V
— 245 — ns
—75—ns
— – 0.81 – 1.06 V IF = – 3.5 A, VGS = 0
— 65 — ns IF = – 3. 5A, VGS = 0

– 20 V
± 10 V
– 3.5 A
– 28 A
– 3.5 A

1.3 W

Note3

diF/ dt = 20 A/µs

Note3

Note3

Note3

2

Main Characteristics

HAT1033T

Power vs. Temperature Derating

2.0
Test Condition :

When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

1.5

1.0

0.5

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

–10 V

–20

–4 V

–6 V

–16

D

–12

–8

–2.5 V

Pulse Test

–2 V

–100

Maximum Safe Operation Area

10 µs

DC Operation(PW<10s)

PW =
10 ms

D

–30
–10

–3
–1

–0.3

Operation in
this area is

Drain Current I (A)

–0.1

–0.03
–0.01

limited by R
Ta = 25 °C

1 shot pulse

–0.3 –1 –3 –10 –30 –100

–0.1

DS(on)

Drain to Source Voltage V (V)

Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)

Typical Transfer Characteristics

–20

Tc = –25 °C

–16

D

–12

25 °C

–8

100 µs

1 ms

Note 4

DS

75 °C

Drain Current I (A)

–4

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

V = –1.5 V

GS

DS

Drain Current I (A)

–4

0

–1

–2 –3 –4 –5

Gate to Source Voltage V (V)

V = –10 V

DS

Pulse Test

GS

3

HAT1033T

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–0.25

–0.2

DS(on)

V (V)

–0.15

–0.1

–0.05

Drain to Source Saturation Voltage

0

–2 –4

–6

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.20

Ω

0.16

DS(on)

R ( )

0.12

0.08

V = –2.5 V

GS

–0.5 A, –1 A

I = –2 A

D

Pulse Test

I = –2 A

D

–1 A
–0.5 A

–8 –10

GS

Pulse Test

Static Drain to Source on State Resistance

1

Ω

Pulse Test

vs. Drain Current

0.5

DS(on)

0.2

R ( )

0.1
V = –2.5 V

GS

0.05
–4 V

0.02

Drain to Source On State Resistance

0.01

–0.2 –0.5 –1 –2 –5 –10

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

Tc = –25 °C

10

5

25 °C

2

–20

75 °C

0.04

–0.5 A, –1 A, –2 A

–4 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

1

Forward Transfer Admittance |y | (S)

0.5
–0.2 –0.5 –1 –2 –5

Drain Current I (A)

V = –10 V

DS

Pulse Test

–10

D

–20

HAT1033T

Body–Drain Diode Reverse

500

Recovery Time

200

100

50

20

10

Reverse Recovery Time trr (ns)

5

di / dt = 20 A / µs
V = 0, Ta = 25 °C

GS

–0.2 –0.5 –1 –2 –5

Reverse Drain Current I (A)

Dynamic Input Characteristics

0

V = –5 V

DD

–10 V

–10

DS

–20 V

DR

Typical Capacitance vs.

10000

Drain to Source Voltage

3000

1000

Ciss

Coss

300

Crss

100

Capacitance C (pF)

30

10

–10–0.1

0 –4 –8 –12 -16 –20

Drain to Source Voltage V (V)

0

–2

GS

500

200

Switching Characteristics

t

d(off)

V = 0

GS

f = 1 MHz

DS

–20

V

DS

V = –20 V

DD

–10 V

–30

–5 V

–40

Drain to Source Voltage V (V)

I = –3.5 A

D

0

4 8 12 16 20

Gate Charge Qg (nc)

V

GS

–4

100

50

t

t

r

f

–6

t

20

–8

Switching Time t (ns)

10

Gate to Source Voltage V (V)

–10–50

5

–0.2 –0.5 –1 –2 –5

–0.1

Drain Current I (A)

V = –4 V, V = –10 V

GS

PW = 5 µs, duty < 1 %

d(on)

DD

–10

D

5

HAT1033T

Reverse Drain Current vs.

Source to Drain Voltage

–20

Pulse Test

s (t)

γ

0.01

10

0.1

–16

DR

V = –5 V

GS

–12

–8

0, 5 V

–4

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

SD

Normalized Transient Thermal Impedance vs. Pulse Width

D = 1

1

0.5

0.2

0.1

0.05

0.02

0.01

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 139 °C/W, Ta = 25 °C

When using the glass epoxy board
(FR4 40x40x1.6 mm)

0.001

Normalized Transient Thermal Impedance

1shot pulse

0.0001
10 µ

100 µ 1 m 10 m 100 m 1 10

6

P

DM

Pulse Width PW (S)

PW

D =

T

PW

T

100 1000 10000

Switching Time Test Circuit Switching Time Waveform

HAT1033T

Vin Monitor

Vin
–4 V

50Ω

D.U.T.

R

L

V

DD

= –10 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

td(off)

90%

90%

10%

t

f

7

HAT1033T

Package Dimensions

3.00 ± 0.1

Unit: mm

0.65

0.22

8

1

5

4

4.40 ± 0.1

6.40 ± 0.20

1.10 Max

0 – 8 °

+0.03

+0.08
–0.07

0.10

0.13

–0.04

0.07

M

0.17 ± 0.05

0.50 ± 0.10

Hitachi code

EIAJ

JEDEC

TTP–8D

—
—

8

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