Datasheet HAT1026R Datasheet (HIT)

Silicon P Channel Power MOS FET

Features

• Low on-resistance

• Capable of 4 V gate drive

• Low drive current

• High density mounting

Outline

HAT1026R

High Speed Power Switching

ADE-208-457 H (Z)

9th. Edition

February 1999

SOP–8

4

G

56 7 8
D

D

DD

SSS
1

23

5

6

7

8

2

1

1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain

4

3

HAT1026R

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body–drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 8 12 — S ID = – 4 A, VDS = – 10 V
Input capacitance Ciss — 1700 — pF VDS = – 10V
Output capacitance Coss — 1000 — pF VGS = 0
Reverse transfer capacitance Crss — 190 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

– 30 — — V ID = – 10 mA, VGS = 0
± 20 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 16 V, VDS = 0
——– 10µAVDS = – 30 V, VGS = 0
– 1.0 — – 2.5 V VDS = –10V, I D = –1mA
— 0.028 0.037 Ω ID = – 4 A, VGS = – 10 V
— 0.04 0.065 Ω ID = – 4 A, VGS = – 4 V

— 60 — ns VGS = – 4 V, ID = – 4 A
— 330 — ns VDD ≅ – 10 V
—80—ns
— 120 — ns
— – 0.9 – 1.4 V IF = – 7 A, VGS = 0
— 70 — ns IF = – 7 A, VGS = 0

– 30 V
± 20 V
– 7 A
– 56 A
– 7 A

2.5 W

Note3

diF/ dt = 20A/µs

Note3

Note3

Note3

2

Main Characteristics

HAT1026R

Power vs. Temperature Derating

4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

–50

–10V

–8 V

–6 V
–5 V

–40

D

–30

–4.5 V

Pulse Test

–4 V

–100

–30
–10

D

–0.3

Drain Current I (A)

–0.1

–0.03
–0.01

Maximum Safe Operation Area

–3
–1

DC Operation (PW < 10 s)

Operation in
this area is
limited by R

Ta = 25 °C
1 shot Pulse

–0.01–0.03

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V (V)
Note 4 :

When using the glass epoxy board
(FR4 40x40x1.6 mm)

Typical Transfer Characteristics

–50

–40

D

–30

DS(on)

Tc = –25°C

100 µs

10 µs

1 ms

PW = 10 ms

Note 4

DS

25°C
75°C

–20

Drain Current I (A)

–10

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

–3.5 V

–3 V

V = –2.5 V

GS

DS

–20

Drain Current I (A)

–10

0

–2 –4 –6 –8

Gate to Source Voltage V (V)

V = –10 V

DS

Pulse Test

GS

–10

3

HAT1026R

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–0.5

–0.4

DS(on)

Pulse Test

–0.3

–0.2

–0.1

Drain to Source Voltage V (V)

0

–2 –4 –6 –8 –10

Gate to Source Voltage V (V)

I = –5 A

D

–2 A
–1 A

GS

Static Drain to Source on State Resistance

vs. Temperature

0.10

Ω

Pulse Test

0.08

DS(on)

R ( )

0.06
V = –4 V

GS

I = –1, –2, –5 A

D

0.04

–1, –2, –5 A

0.02

–10 V

0

–40 0 40 80 120 160

Static Drain to Source on State Resistance

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

0.5

Pulse Test

Ω

0.2

DS(on)

0.1

R ( )

V = –4 V

0.05

0.02

0.01

Drain to Source On State Resistance

0.005

GS

–10 V

–0.2 –0.5 –1 –2 –5 –10 –20

Drain Current I (A)

D

Forward Transfer Admittance vs.

50

Drain Current

20

Tc = –25 °C

10

25 °C

5

2

1

0.5

Forward Transfer Admittance |yfs| (S)

–0.2 –0.5

75 °C

V = –10 V

DS

Pulse Test

–1

–2 –5 –10 –20

Drain Current I (A)

D

4

HAT1026R

Body–Drain Diode Reverse

500

Recovery Time

200

100

50

20

10

Reverse Recovery Time trr (ns)

5

di/dt = 20 A/µs
V = 0, Ta = 25°C

GS

–0.2 –0.5 –1 –2 –5 –10–0.1

Reverse Drain Current I (A)

DR

Typical Capacitance vs.
Drain to Source Voltage

10000

3000

1000

Ciss

Coss

300

100

Capacitance C (pF)

Crss

30
10

0 –10 –20 –30 –40 –50

Drain to Source Voltage V (V)

V = 0

GS

f = 1 MHz

DS

Dynamic Input Characteristics

0

–10

DS

–20

V

GS

–30

–40

–50

I = –7 A

D

Drain to Source Voltage V (V)

0

V = –5 V

DD

–10 V
–25 V

V

DS

V = –25 V

DD

–10 V

–5 V

16 32 48 64 80

Gate Charge Qg (nc)

0

–4

1000

500

GS

200

–8

Switching Characteristics

100

–12

–16

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

–20

10

t

d(off)

V = –4 V, V = –10 V
PW = 3 µs, duty < 1 %

–0.2 –0.5 –1 –2 –5 –10–0.1

Drain Current I (A)

GS

t

d(on)

DD

D

t

r

t

f

5

HAT1026R

DR

–50

–40

–30

–20

–10

Reverse Drain Current vs.

Souece to Drain Voltage

V = –5 V

GS

0, 5 V

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

Normalized Transient Thermal Impedance vs. Pulse Width

10

D = 1

s (t)

γ

1

0.5

0.2

0.1

0.1

0.05

0.01

0.02

0.01

0.001

Normalized Transient Thermal Impedance

1shot pulse

0.0001
10 µ

100 µ 1 m 10 m 100 m 1 10

Pulse Test

SD

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 83.3 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)

P

DM

Pulse Width PW (S)

PW

D =

T

PW

T

100 1000 10000

6

Switching Time Test Circuit Switching Time Waveform

HAT1026R

Vin Monitor

Vin
–4 V

50Ω

D.U.T.

Vout
Monitor

R

L

V

DD

= –10 V

Vin

Vout

td(on)

10%

10%

90%

tr

td(off)

90%

90%

10%

t

f

7

HAT1026R

Package Dimensions

5.0 Max

Unit: mm

8

1

1.27

0.51 Max

5

4

4.0 Max

1.75 Max

0.25 Max

0.15

0.25

M

6.2 Max

0.25 Max
0 – 8°

1.27 Max

Hitachi Code

JEDEC

EIAJ

FP–8DA

—

MS-012AA

8

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