Datasheet HAT1023R Datasheet (HIT)

Silicon P Channel Power MOS FET

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

HAT1023R

High Speed Power Switching

ADE-208-436 G (Z)

8th. Edition

June 1997

SOP–8

4

G

56 7 8
D

D

DD

SSS
1

23

5

6

7

8

2

1

1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain

4

3

HAT1023R

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body–drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

–20 V
±10 V
–7 A
–56 A
–7 A

2.5 W

2

HAT1023R

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GSS

DSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 9 14 — S ID = –4A, VDS = –10V
Input capacitance Ciss — 2250 — pF VDS = –10V
Output capacitance Coss — 1120 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body–drain diode reverse

t

rr

recovery time
Note: 3. Pulse test

–20 — — V ID = –10mA, VGS = 0

±10——V I

= ±100µA, VDS = 0

G

——±10 µAVGS = ±8V, VDS = 0
— — –10 µAVDS = –20 V, VGS = 0
–0.5 — –1.5 V VDS = –10V, I D = –1mA
— 0.027 0.04 Ω ID = –4A, VGS = –4V
— 0.04 0.06 Ω ID = –4A, VGS = –2.5V

— 40 — ns VGS = –4V, ID = –4A
— 200 — ns VDD ≅ –10V
— 280 — ns
— 220 — ns
— –0.9 –1.4 V IF = –7A, VGS = 0

Note3

— 75 — ns IF = –7A, VGS = 0

diF/ dt =20A/µs

Note3

Note3

Note3

3

HAT1023R

Main Characteristics

Power vs. Temperature Derating

4.0
Test Condition :

When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

–10 V

–5 V

–20

–4 V

–16

D

–3.5 V

–3 V

–12

–2.5 V

Pulse Test

–100

10 µs 100 µs

–30

Maximum Safe Operation Area

D

–10

DC Operation (PW < 10 s)

–3
–1

Operation in
this area is

–0.3

limited by R

Drain Current I (A)

–0.1

–0.03
–0.01

Ta = 25 °C
1 shot pulse

–0.3 –1 –3 –10 –30 –100

–0.1

DS(on)

Drain to Source Voltage V (V)

Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)

Typical Transfer Characteristics

–20

Tc = –25 °C

–16

25 °C

D

–12

1 ms

PW = 10 ms

Note 4

75 °C

DS

–8

Drain Current I (A)

–4

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

4

–2 V

V = –1.5 V

GS

DS

–8

Drain Current I (A)

–4

0

–1

–2 –3 –4 –5

Gate to Source Voltage V (V)

V = –10 V

DS

Pulse Test

GS

HAT1023R

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–0.5

Pulse Test

–0.4

DS(on)

V (V)

–0.3

–0.2

I = –5 A

D

–0.1

Drain to Source Saturation Voltage

0

–2 –4

Gate to Source Voltage V (V)

–6

–8 –10

GS

Static Drain to Source on State Resistance

vs. Temperature

0.10

Ω

Pulse Test

0.08
I = –5, –2, –1 A

DS(on)

R ( )

D

0.06

V = –2.5 V

GS

0.04

–5, –2 , –1 A

0.02

–4 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

0.5

Ω

Pulse Test

vs. Drain Current

0.2

DS(on)

0.1

R ( )

0.05

0.02

–1 A–2 A

0.01

Drain to Source On State Resistance

0.005

V = –2.5 V

GS

–4 V

–0.2 –0.5 –1 –2 –5 –10 –20

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

Tc = –25 °C

10

75 °C

5

25 °C

2

1

Forward Transfer Admittance |y | (S)

0.5
–0.2 –0.5 –1 –2 –5 –10

Drain Current I (A)

V = –10 V

DS

Pulse Test

D

–20

5

HAT1023R

Body–Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

di / dt = 20 A / µs
V = 0, Ta = 25 °C

GS

–0.2 –0.5 –1 –2 –5 –10 –20

Reverse Drain Current I (A)

DR

Typical Capacitance vs.
Drain to Source Voltage

10000

3000

1000

300

100

Capacitance C (pF)

30

V = 0

GS

f = 1 MHz

10

0

–4

Drain to Source Voltage V (V)

–8

–12 –16 –20

Ciss

Coss

Crss

DS

Dynamic Input Characteristics

0

V = –5 V

DD

–10 V

–10

DS

–20

V

DS

–20 V

V

GS

–30

V = –20 V

DD

–10 V

–40

Drain to Source Voltage V (V)

I = –7 A

D

0

16

–5 V

32 48 64 80

Gate Charge Qg (nc)

0

1000

Switching Characteristics

500

–2

GS

–4

200

t

f

100

–6

–8

Gate to Source Voltage V (V)

–10–50

50

Switching Time t (ns)

20

V = –4 V, V = –10 V
PW = 3 µs, duty < 1 %

10

–0.2 –0.5 –1 –2 –5 –10 –20

Drain Current I (A)

GS

t

d(off)

t

d(on)

t

r

DD

D

6

DR

HAT1023R

Reverse Drain Current vs.

Source to Drain Voltage

–20

Pulse Test

–16

s (t)

γ

0.1

0.01

10

–12

V = –5 V

GS

–8

0, 5 V

–4

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

SD

Normalized Transient Thermal Impedance vs. Pulse Width

D = 1

1

0.5

0.2

0.1

0.05

0.02

0.01

θ γ θ

ch – f(t) = s (t) • ch – f

θ

ch – f = 83.3 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)

0.001

Normalized Transient Thermal Impedance

1shot pulse

0.0001
10 µ

100 µ 1 m 10 m 100 m 1 10

P

DM

Pulse Width PW (S)

PW

D =

PW

T

100 1000 10000

T

7

HAT1023R

Switching Time Test Circuit Switching Time Waveform

Vin Monitor

Vin
–4 V

50Ω

D.U.T.

Vout
Monitor

R

L

V

DD

= –10 V

Vin

Vout

td(on)

10%

10%

90%

tr

td(off)

90%

90%

10%

t

f

8

Package Dimensions

5.0 Max

HAT1023R

Unit: mm

8

1

1.27

0.51 Max

5

4

4.0 Max

1.75 Max

0.25 Max

0.15

0.25

M

6.2 Max

0.25 Max
0 – 8°

1.27 Max

Hitachi Code

EIAJ

JEDEC

FP–8DA

—

MS-012AA

9

HAT1023R

Cautions

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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

10

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