Page 1
HAL710
Hall-Effect Sensor
with Direction Detection
Edition Feb. 20, 2001
6251-478-1AI
ADVANCE INFORMATION
MICRONAS
MICRONAS
Page 2
HAL710 ADVANCE INFORMATION
Contents
Page Section Title
3 1. Introduction
3 1.1. Features
3 1.2. Applications
4 1.3. Marking Code
4 1.3.1. Special Marking of Prototype Parts
4 1.4. Operating Junction Temperature Range
4 1.5. Hall Sensor Package Codes
4 1.6. Solderability
5 2. Functional Description
7 3. Specifications
7 3.1. Outline Dimensions
7 3.2. Dimensions of Sensitive Areas
7 3.3. Positions of Sensitive Areas
8 3.4. Absolute Maximum Ratings
8 3.5. Recommended Operating Conditions
9 3.6. Electrical Characteristics
10 3.7. Magnetic Characteristics
10 3.7.1. Magnetic Thresholds
10 3.7.2. Matching B
10 3.7.3. Hysteresis Matching
and B
S1
S2
11 4. Application Notes
11 4.1. Ambient Temperature
11 4.2. Extended Operating Conditions
11 4.3. Signal Delay
11 4.4. Test Mode Activation
11 4.5. Start-up Behavior
12 4.6. EMC and ESD
12 5. Data Sheet History
2 Micronas
Page 3
ADVANCE INFORMATION HAL710
Hall-Effect Sensor with Direction Detection
1. Introduction
The HAL 710 is a monolithic integrated Hall-effect sensor manufactured in CMOS technology with two independent Hall plates S1 and S2 spaced 2.35 mm apart.
The device has two open-drain outputs:
The ’Count Output’ operates like a single latched Hall
switch according to the magnetic field present at Hall
plate S1 (see Fig. 3–3).
The ‘Direction Output’ indicates the direction of a linear
or rotating movement of magnetic objects.
In combination with an active target providing a
sequence of alternating magnetic north and south
poles, the sensor forms a system generating the signals required to control position, speed, and direction
of the target movement.
The internal circuitry evaluates the direction of the
movement and updates the ‘Direction Output’ at every
edge of the ‘Count Signal’ (rising and falling). The
Direction Output is high if the target moves from Hall
plate S1 to Hall plate S2. It is low if the target first
passes plate S2 and later plate S1. The state of the
Direction Output only changes at a rising or falling
edge of the Count Output.
1.1. Features
– generation of ‘Count Signals’ and ‘Direction Signals’
– delay of the ‘Count Signals’ with respect to the
‘Direction Signal’ of 1 µs minimum
– switching type latching
– low sensitivity
–typical B
–typical B
: 14.9 mT at room temperature
ON
: −14.9 mT at room temperature
OFF
– temperature coefficient of −2000 ppm/K in all mag-
netic characteristics
– switching offset compensation at typically 150 kHz
– operation from 3.8 V to 24 V supply voltage
– operation with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at V
DD
-pin
– robustness of magnetic characteristics against
mechanical stress
– short-circuit protected open-drain outputs by ther-
mal shut down
– constant switching points over a wide supply voltage
range
– EMC corresponding to DIN 40839
The design ensures a setup time for the Direction Output with respect to the corresponding Count Signal
edge of 1/2 clock periods (1 µs minimum).
The device includes temperature compensation and
active offset compensation. These features provide
excellent stability and matching of the switching points
in the presence of mechanical stress over the whole
temperature and supply voltage range. This is required
by systems determining the direction from the comparison of two transducer signals.
The sensor is designed for industrial and automotive
applications and operates with supply voltages from
3.8 V to 24 V in the ambient temperature range from
−40 °C up to 125 °C.
The HAL 710 is available in the SMD package
SOT-89B.
1.2. Applications
The HAL 710 is the optimal sensor for position-control
applications with direction detection and alternating
magnetic signals such as:
– multipole magnet applications,
– rotating speed and direction measurement,
position tracking (active targets), and
– window lifters.
Micronas 3
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HAL710 ADVANCE INFORMATION
HALXXXPA-T
Temperature Range: K, or E
Package: SF for SOT-89B
Type: 710
Example: HAL 710SF-K
→ Type: 710
→ Package: SOT-89B
→ Temperature Range: T
J
= −40 °C to +140 °C
1.3. Marking Code
All Hall sensors have a marking on the package surface (branded side). This marking includes the name
of the sensor and the temperature range.
Type Temperature Range
K E
HAL710 710K 710E
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not
intended to be used for qualification test or as production parts.
1.4. Operating Junction Temperature Range
1.6. Solderability
All packages: according to IEC68-2-58
During soldering, reflow processing and manual
reworking, a component bod y temperature of 260 °C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from
the date code prin ted on the labels, even in environments as extreme as 40 °C and 90% relative humidity.
V
1
DD
3 Count Output
2 Direction Output
4GND
Fig. 1–1: Pin configuration
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T
= −40 °C to +140 °C
K: T
J
= −40 °C to +100 °C
E: T
J
The relationship between ambient temperature (T
).
J
A
and junction temperature is explained in Section 4.1.
on page 11.
1.5. Hall Sensor Package Codes
)
Hall sensors are available in a wide variety of packaging quantities. For more detailed information, please
refer to the brochure: “Ordering Codes for Hall Sensors”.
4 Micronas
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ADVANCE INFORMATION HAL710
2. Functional Description
The HAL 710 is a monoli thic int egrated circu it with two
independent subblocks consisting eac h of a Hall plate
and the corresponding comparator. Each subblock
independently switches the comparator output in
response to the magnetic field at the location of the
corresponding sens itive area. If a magnetic fiel d with
flux lines perpendicular to the sensitive area is
present, the biased Hall plate generate s a Hall voltage
proporti onal to this field. The Hal l voltage is compa red
with the actual thresho ld level in the comparato r. The
subblocks are designed to have closely matched
switching points.
The temperature-dependent bias – common to both
subblocks – increases the supply voltage of the Hall
plates and adjust s the switching poin ts to the de creasing induction of ma gnets a t highe r temperatu res. If the
magnetic field exceeds the threshold levels, the comparator switches to the appropri ate state. The built-in
hysteresis prevents oscillations of the outputs.
In order to achieve good matching of the switching
points of both subblocks, the magnetic offset caused
by mechanical stress is compensated for by use of
“switching offset compensation techniques”. Therefore,
an internal oscillator provides a two-phase clock to
both subblocks. For each subblock the Hall voltage is
sampled at the end of the first phase. At the end of the
second phase, both sampled and actual Hall voltages
are averaged and compared with the actual switching
point.
Clock
B
S1
BS1
on
B
S2
B
S2on
Count
Output
V
OH
V
OL
Direction
Output
V
OH
V
OL
I
I
dd
dd
1/f
osc
Fig. 2–1: Timing diagram
t
t
t
t
t
t
f
The output of comp arator 1 (co nnected to S1) directly
controls the ‘Cou nt Output’. The outputs of both comparators enter the ‘Dir ection Detection Block’ controlling the state of the ‘Direction Output’. The ‘Direction
Output’ is ’high’ if the edge at the output of
comparator 1 precedes that at comparator 2. In the
opposite case, ‘Directi on Output’ is ’low’. The previous
state of the ‘Direction Output’ is maintained be tween
edges of the ‘Count Output’ and i n case the edge s at
comparator 1 and comparator 2 occur in the same
clock period.
Shunt protection devices clamp voltage peaks at the
output pins and V
resistors. Reverse current is limited at the V
-pin together with external series
DD
DD
-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the V
-pin for
DD
reverse voltages ranging from 0 V to −15 V.
Micronas 5
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HAL710 ADVANCE INFORMATION
V
4
GND
1
DD
Reverse
Voltage and
Overvoltage
Protection
Clock
Temperature
Dependent
Bias
Hall Plate 1
S1
Hall Plate 2
S2
Hysteresis
Control
Switch
Switch
Fig. 2–2: HAL 710 block diagram
Comparator
Comparator
Test-Mode
Control
Direction
Detection
Short Circuit
and
Overvoltage
Protection
Output
Output
3
Count Output
2
Direction Output
6 Micronas
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ADVANCE INFORMATION HAL710
4
3. Specifications
3.1. Outline Dimensions
4.55
±0.2
min.
0.25
1.15
SPGS0022-5-B4/1E
0.15
0.3
1.7
4
x1x
2
123
0.40.4
0.4
1.5
3.0
branded side
y
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
sensitive area S
sensitive area S
2.55
0.06
∅0.2
1
2
∅0.2
top view
±0.04
3.2. Dimensions of Sensitive Areas
Dimensions: 0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
SOT-89B
x
1+x2
x
1=x2
(2.35±0.001) mm
1.175 mm nominal
y 0.975 mm nominal
Note: For all package diagrams, a mechanical tolerance of ±0.05 mm applies to all dimen sions where no
tolerance is explicitly given.
Micronas 7
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HAL710 ADVANCE INFORMATION
3.4. Absolute Maximum Ratings
Symbol Parameter Pin No. Min. Max. Unit
28
100
1)
1)
1)
V
V
mA
3)
mA
V
-V
−I
I
DDZ
DD
P
DD
Supply Voltage 1 −15 28
Supply Voltage 1 −24
2)
Reverse Supply Current 1 − 50
Supply Current through Protection
1 −100
3)
Device
200
1)
1)
3)
3)
V
mA
mA
mA
V
O
I
O
I
Omax
I
OZ
Output Voltage 2, 3 −0.3 28
Continuous Output On Current 2, 3 − 20
Peak Output On Current 2, 3 − 150
Output Current through Protection
3 −200
3)
Device
170
150
5)
4)
°C
°C
°C
T
S
T
J
Storage Temperature Range −65 150
Junction Temperature Range −40
−40
1)
as long, as T
2)
with a 220-Ω series resistance at pin 1 corresponding to test circuit 1
3)
t < 2 ms
4)
t < 1000 h
5)
Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the
is not exceeded
Jmax
date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity.
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause per ma nen t damage to the device. This
is a stress rating onl y. Functional operation of the device at these or any oth er condi tions beyond those indic ated i n
the “Rec ommended Operating Conditions/Character istics” of this specificati on is not i mplied. Ex posure to abs olute
maximum ratings conditions for extended periods may affect device reliability .
3.5. Re commended Operating Conditions
Symbol Parameter Pin No. Min. Typ. Max. Unit
V
DD
I
O
V
O
Supply Voltage 1 3.8 − 24 V
Continuous Output Current 3 0 − 10 mA
Output Voltage
30− 24 V
(output switch off)
8 Micronas
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ADVANCE INFORMATION HAL710
5.0
2.0
2.0
1.0
3.6. Electrical Characteristics
= −40 °C to +140 °C, VDD = 3.8 V to 24 V, as not otherwise specified in Conditions.
at T
J
Typical Characteristics for T
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
= 25 °C and VDD = 5 V.
J
I
I
V
V
V
V
DD
DD
DDZ
OZ
OL
OL
Supply Current 1 2 5.5 9 mA TJ = 25 °C
Supply Current
over Temperature Range
Overvoltage Protection
at Supply
Overvoltage Protection
at Output
Output Voltage 2 ,3 130 280 mV IOL = 10 mA, TJ = 25 °C
Output Voltage over
Temperature Range
I
OH
I
OH
Output Leakage Current 2,3 0.06 0.1 µA Output switched off, TJ = 25 °C,
Output Leakage Current over
Temperature Range
f
osc
f
osc
t
(O) Enable Time of Output after
en
Internal sampling frequency − 130 150 − kHz TJ = 25 °C
Internal sampling frequency
over Temperature Range
Setting of V
DD
1710mA
1 28.5 32 V IDD = 25 mA, TJ = 25 °C, t = 20 ms
2,3 2832V IOH = 25 mA, TJ = 25 °C, t = 20 ms
2,3 130 400 mV IOL = 10 mA,
V
= 3.8 V to 24 V
OH
2,3 − 10 µA Output switched off, TJ ≤ 140 °C,
V
= 3.8 V to 24 V
OH
− 100 150 − kHz
50 100 µsVDD = 12 V,
B>B
+ 2 mT or B<B
on
− 2mT
off
t
r
t
f
R
thSB
SOT-89B
Output Rise Time 2,3 1.2 µsVDD = 12 V, RL= 20 kΩ, CL= 20 pF
Output FallTime 2,3 0.2 1.6 µsVDD = 12 V, RL= 20 kΩ, CL= 20 pF
Thermal Resistance Junction to
Substrate Backside
Fig. 3–2: Recommended pad size for SOT-89B
Dimensions in mm
−−150 200 K/W Fiberglass Substrate
30 mm x 10mm x 1.5mm,
pad size see Fig. 3–2
Micronas 9
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HAL710 ADVANCE INFORMATION
B
OFF
B
ON
0
V
OL
V
O
Output Voltage
B
B
HYS
3.7. Magnetic Characteristics
Fig. 3–3: Definition of magnetic switching points for
the HAL710
Positive flux density values refer to magnetic south
pole at the branded side of the package.
3.7.1. Magnetic Thresholds
(quasistationary: dB/dt<0.5 mT/ms)
at T
= −40 °C to + 140 °C, VDD = 3.8 V to 24 V, as not
J
otherwise specified
3.7.2. Matching B
and BS2
S1
(quasistationary: dB/dt<0.5mT/ms)
= −40 °C to +140 °C, VDD = 3.8 V to 24 V, as not
at T
J
otherwise specified
Typical Characteristics for T
Parameter
T
j
−40 °C −7.5 0 7.5 −7.5 0 7.5 mT
25 °C −7.5 0 7.5 −7.5 0 7.5 mT
100 °C −7.5 0 7.5 −7.5 0 7.5 mT
140 °C −7.5 0 7.5 −7.5 0 7.5 mT
B
− B
S1on
S2on
Min. Typ Max. Min. Typ Max.
= 25 °C and VDD = 5 V
J
B
− B
S1off
S2off
3.7.3. Hysteresis Matching
(quasistationary: dB/dt<0.5mT/ms)
= −40 °C to +140 °C, VDD = 3.8 V to 24 V, as not
at T
J
otherwise specified
Unit
Typical Characteristics for T
Parameter
T
j
−40 °C 12.5 16.3 20 −20 −16.3 −12.5 mT
25 °C 10.7 14.9 19.1 −19.1 −14.9 −10.7 mT
100 °C tbd tbd tbd tbd tbd tbd mT
140 °C 6.0 1 0.9 16.0 −16.0 −10.9 −6.0 mT
On point
B
S1on, BS2on
Min. Typ. Max. Min. Typ. Max.
= 25 °C and VDD = 5 V
J
Off point
B
, B
S1off,
S2off
Unit
Typical Characteristics for T
Parameter (B
T
j
−40 °C 0.85 1.0 1.2 −
25 °C 0.85 1.0 1.2 −
100 °C 0.85 1.0 1.2 −
140 °C 0.85 1.0 1.2 −
S1on
Min. Typ. Max.
= 25 °C and VDD = 5 V
J
− B
S1off
) / (B
S2on
− B
) Unit
S2off
10 Micronas
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ADVANCE INFORMATION HAL710
4. Application Notes
4.1. Ambient Temperature
Due to the intern al power dissipatio n, the temperature
on the silicon chip (junction temperature T
) is higher
J
than the temperature outside the package (ambient
temperature T
= TA + ∆T
T
J
).
A
At static conditions, the following equation is valid:
∆T = I
* VDD * R
DD
th
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I
and Rth, and the max. value for VDD from the appli-
DD
cation.
For all sensors, the junction temperature range T
specified. The maximum ambient temperature T
is
J
Amax
can be calculated as:
T
Amax
= T
Jmax
− ∆T
4.4. Test Mode Activation
In order to obtain the nor mal operation as described
above, two external pull-up resistors with app ropriate
values are required to connect each output to an external supply, such that the potential at the open-drain
output rises to at least 3 V in less than 10 µs after having turned off the corresponding pull-down transistor or
after having applied V
DD
.
If the ‘Direction Output’ is pulled low externally (the
potential does not rise after the internal pull-down transistor has been turned off), the device enters Manufacturer Test Mode.
Direction Detection is not functional in Manufacturer
Test Mode. The device retu rns to ‘Normal Opera tion’
as soon as the ‘Count Output’ goes high.
Please note, that the pre sence of a Ma nufacturer Test
Mode requires app ropriate measures to prevent accidental activation (e.g. in response to EMC events).
4.5. Start-up Behavior
4.2. Extended Operating Conditions
All sensors fulfil the ele ctric al and magneti c characteristics when operated within the Recommen ded Operating Conditions (see page 8)
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is not
tested. For special test conditions, please contact Micronas.
4.3. Signal Delay
The extra circuitry r equired for the direction detection
increases the latency of the ‘Count and Direction Signal’ compared to a simple switch (e.g. HAL 525). This
extra delay corresponds to 0.5 and 1 clo ck period for
the ‘Direction Signal’ and ‘Count Signa l’ respectively.
Due to the active offset compensation, the sensors
have an initialization time (enable time t
applying the supply voltage. The parameter t
en(O)
) after
en(O)
is
specified in the Electrical Characteristics (see page 9)
During the initia lization time, the output sta tes are not
defined and the outputs can toggle. After t
en(O)
both
outputs will be either high or low for a stable magnetic
field (no toggling) and the ‘Count Output’ will be low if
the applied magneti c field B exceeds B
Output’ will be high if B drops below B
. The ‘Count
ON
. The ‘Direc-
OFF
tion Output’ will have the correct state after the se co nd
edge (rising or falling) in the same direction.
The device contains a Power-On Reset circuit (POR)
generating a reset when V
rises. This signal is used
DD
to initialize both outputs in the ‘Off-state’ (i.e. Output
High) and to dis able Test Mode. The generation of this
Reset Signal is guaranteed when V
at the chip rises
DD
to minimum 3.8 V in less than 4 µs monotonically. If
this condition is violated, the internal reset signal might
be missing. Under these circumstances the chip will
still operate according to the spec ification, but the risk
of toggling outputs during t
netic fields between B
OFF
of the Hall sensor after applying V
increases and for mag-
en(O)
and BON, the output states
will be either low
DD
or high. In order t o ac hieve a well defined ou tput state,
the applied mag netic field then must exceed B
respectively drop below B
OFFmin
.
ONmax
,
Micronas 11
Page 12
HAL710 ADVANCE INFORMATION
4.6. EMC and ESD
For applications that cause disturbances on the supply
line or radiated disturbances, a series resistor and a
capacitor are recommended (see Fig. 4–1). Th e series
resistor and the capac itor should b e placed as cl osely
as possible to the Hall sensor.
Please contact Micronas for detailed investigation
reports with EMC and ESD results.
R
V
220 Ω
V
1
DD
V
V
EMC
P
4.7 nF
4GND
3 Count Output
2 Direction Output
Fig. 4–1: Test circuit for EMC investigations
5. Data Sheet History
1. Advance Information: “HAL710 Hall-Effect Sensor
with Direction Detection”, Feb. 20, 2001,
6251-478-1AI. First release of the advance information.
R
2.4 kΩ
L
20 pF
R
2.4 kΩ
L
20 pF
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
Order No. 6251-478-1AI
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infr ingements or other right s of third parties whic h may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication and
to make changes to its conte nt, at any t ime, withou t obligatio n to noti fy
any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH .
12 Micronas
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