Page 1
HAL700
Dual Hall-Effect Sensor
with Independent Outputs
Edition Feb. 20, 2001
6251-477-1AI
ADVANCE INFORMATION
MICRONAS
MICRONAS
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HAL700 ADVANCE INFORMATION
Contents
Page Section Title
3 1. Introduction
3 1.1. Features
3 1.2. Applications
4 1.3. Marking Code
4 1.3.1. Special Marking of Prototype Parts
4 1.4. Operating Junction Temperature Range
4 1.5. Hall Sensor Package Codes
4 1.6. Solderability
5 2. Functional Description
6 3. Specifications
6 3.1. Outline Dimensions
6 3.2. Dimensions of Sensitive Areas
6 3.3. Positions of Sensitive Areas
7 3.4. Absolute Maximum Ratings
7 3.5. Recommended Operating Conditions
8 3.6. Electrical Characteristics
9 3.7. Magnetic Characteristics
9 3.7.1. Magnetic Threshold
9 3.7.2. Matching of B
9 3.7.3. Hysteresis Matching
and B
S1
S2
10 4. Application Notes
10 4.1. Ambient Temperature
10 4.2. Extended Operating Conditions
10 4.2.1. Supply voltage below 3.8 V
10 4.3. Start-up Behavior
10 4.4. EMC and ESD
12 5. Data Sheet History
2 Micronas
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ADVANCE INFORMATION HAL700
Dual Hall-Effect Sensor with Independent Outputs
1. Introduction
The HAL 700 is a monolithic CMOS Hall-effect sensor
consisting of two independent latched switches (see
Fig. 3–3) with closely matched magnetic characteristics controlling two independent open-drain outputs.
The Hall plates of the two switches are spaced
2.35 mm apart.
In combination with an active target providing a
sequence of alternating magnetic north and south
poles, the sensor forms a system generating the signals required to control position, speed, and direction
of the target movement.
The device includes temperature compensation and
active offset compensation to provide excellent stability
and matching of the switching points in the presence of
mechanical stress over the whole temperature- and
supply voltage range. This is required by systems
which determine the direction by comparing two transducer signals.
The sensor is designed for industrial and automotive
applications and operates with supply voltages from
3.8 V to 24 V in the ambient temperature range from
−40 °C up to 125 °C.
1.1. Features
– two independent Hall-switches
– distance of Hall plates: 2.35 mm
– low sensitivity
–typical B
–typical B
: 14.9 mT at room temperature
ON
: −14.9 mT at room temperature
OFF
– temperature coefficient of −2000 ppm/K in all mag-
netic characteristics
– switching offset compensation at typically 150 kHz
– operation from 3.8 V to 24 V supply voltage
– operation with static and dynamic magnetic fields up
to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at V
DD
-pin
– robustness of magnetic characteristics against
mechanical stress
– short-circuit protected open-drain outputs by ther-
mal shutdown
– constant switching points over a wide supply voltage
range
– EMC corresponding to DIN 40839
The HAL 700 is available in the SMD package
SOT-89B.
1.2. Applications
The HAL 700 is the ideal sensor for position-control
applications with direction detection and alternating
magnetic signals such as:
– multipole magnet applications,
– rotating speed and direction measurement,
position tracking (active targets), and
– window lifters.
Micronas 3
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HAL700 ADVANCE INFORMATION
HALXXXPA-T
Temperature Range: K, or E
Package: SF for SOT-89B
Type: 700
Example: HAL 700SF-K
→ Type: 700
→ Package: SOT-89B
→ Temperature Range: T
J
= −40 °C to +140 °C
1.3. Marking Code
All Hall sensors have a marking on the package surface (branded side). This marking includes the name
of the sensor and the temperature range.
Type Temperature Range
K E
HAL 700 700K 700E
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not
intended to be used for qualification test or as production parts.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T
).
J
1.6. Solderability
All packages: according to IEC68-2-58
During soldering, reflow processing, and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, star ting from
the date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity.
V
1
DD
3 S1-Output
2 S2-Output
4GND
Fig. 1–1: Pin configuration
= −40 °C to +140 °C
K: T
J
= −40 °C to +100 °C
E: T
J
The relationship between ambient temperature (T
and junction temperature is explained in Section 4.1.
on page 10.
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packaging quantities. For more detailed information, please
refer to the brochure: “Ordering Codes for Hall Sensors”.
)
A
4 Micronas
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ADVANCE INFORMATION HAL700
2. Functional Description
The HAL 700 is a monolithic int egrated circu it with two
independent subblocks consisting eac h of a Hall plate
and the corresponding comparator. Each subblock
independently switches the comparator output in
response to the magnetic field at the location of the
corresponding sens itive area. If a magnetic fiel d with
flux lines perpendicular to the sensitive area is
present, the biased Hall plate generate s a Hall voltage
proporti onal to this field. The Hal l voltage is compa red
with the actual thresho ld level in the comparato r. The
subblocks are designed to have closely matched
switching points. The output of comparator 1 atta ched
to S1 controls the ope n drain output at Pin 3. Pin 2 is
set according to t he state of comparator 2 conne cted
to S2.
The temperature-dependent bias – common to both
subblocks – increases the supply voltage of the Hall
plates and adjust s the switching poin ts to the de creasing induction of ma gnets a t highe r temperatu res. If the
magnetic field exceeds the threshold levels, the comparator switches to the appropri ate state. The built-in
hysteresis prevents oscillations of the outputs.
In order to achieve good matching of the switching
points of both subblocks, the magnetic offset caused
by mechanical stress is compensated for by use of
“switching offset compensation techniques”. Therefore,
an internal oscillator provides a two-phase clock to
both subblocks. For each subblock, the Hall voltage is
sampled at the end of the first phase. At the end of the
second phase, both sampled and actual Hall voltages
are averaged and compared with the actual switching
point.
Shunt protection devices clamp voltage peaks at the
Output-pins and V
resistors. Reverse current is limited at the V
-pin together with exter nal series
DD
DD
-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at th e V
-pin for
DD
reverse voltages ranging from 0 V to −15 V.
Clock
t
B
S1
B
S1on
t
B
S2
B
S2on
t
Pin 2
V
OH
V
Pin 3
V
V
I
DD
OL
OH
OL
1/f
osc
t
f
t
t
t
t
f
Fig. 2–1: Timing diagram
Short Circuit
and
Overvoltage
Protection
Output
Output
3
S1-Output
2
S2-Output
V
4
GND
1
DD
Reverse
Voltage and
Overvoltage
Protection
Clock
Temperature
Dependent
Bias
Hall Plate 1
S1
Hall Plate 2
S2
Hysteresis
Control
Switch
Switch
Comparator
Comparator
Fig. 2–2: HAL 700 block diagram
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HAL700 ADVANCE INFORMATION
sensitive area S
1
min.
0.25
x1x
2
2.55
0.40.4
0.4
1.5
3.0
0.06
±0.04
4
±0.2
0.15
branded side
SPGS0022-5-B4/1E
top view
y
123
4
0.3
1.15
∅0.2
sensitive area S
2
∅0.2
4.55
1.7
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
3.2. Dimensions of Sensitive Areas
Dimensions: 0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
SOT-89B
x
1+x2
x
1=x2
(2.35±0.001) mm
1.175 mm nominal
y 0.975 mm nominal
Note: For all package diagrams, a mechanical tolerance of ±0.05 mm a pplies to all dimensi ons where no
tolerance is explicitly given.
6 Micronas
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ADVANCE INFORMATION HAL700
3.4. Absolute Maximum Ratings
Symbol Parameter Pin No. Min. Max. Unit
28
100
1)
1)
1)
V
V
mA
3)
mA
V
-V
−I
I
DDZ
DD
P
DD
Supply Voltage 1 −15 28
Supply Voltage 1 −24
2)
Reverse Supply Current 1 − 50
Supply Current through Protection
1 −100
3)
Device
200
1)
1)
3)
3)
V
mA
mA
mA
V
O
I
O
I
Omax
I
OZ
Output Voltage 2, 3 −0.3 28
Continuous Output On Current 2, 3 − 20
Peak Output On Current 2, 3 − 150
Output Current through Protection
3 −200
3)
Device
170
150
5)
4)
°C
°C
°C
T
S
T
J
Storage Temp erature Range −65 150
Junction Temperature Range −40
−40
1)
as long, as T
2)
with a 220-Ω series resistance at pin 1 corresponding to test circuit 1
3)
t < 2 ms
4)
t < 1000 h
5)
Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the
is not exceeded
Jmax
date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity.
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause per m ane nt damage to the device. This
is a stress rating onl y. Functional operation of the device at these or any ot her c onditions beyond those indi cated in
the “Rec ommended O perating Conditio ns/Characteris tics” of this s pecification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol Parameter Pin No. Min. Typ. Max. Unit
V
DD
I
O
V
O
Supply Voltage 1 3.8 − 24 V
Continuous Output Current 3 0 − 10 mA
Output Voltage
30− 24 V
(output switch off)
Micronas 7
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HAL700 ADVANCE INFORMATION
5.0
2.0
2.0
1.0
3.6. Electrical Characteristics
= −40 °C to +140 °C, VDD = 3.8 V to 24 V, as not otherwise specified in Conditions.
at T
J
Typical Characteristics for T
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
= 25 °C and VDD = 5 V.
J
I
I
V
V
V
V
DD
DD
DDZ
OZ
OL
OL
Supply Current 1 2 5.5 9 mA TJ = 25 °C
Supply Current
over Temperature Range
Overvoltage Protection
at Supply
Overvoltage Protection
at Output
Output Voltage 2, 3 130 280 mV IOL = 10 mA, TJ = 25 °C
Output Voltage over
Temperature Range
I
OH
I
OH
Output Leakage Current 2, 3 0.06 0.1 µA Output switched off, TJ = 25 °C,
Output Leakage Current over
Temperature Range
f
osc
f
osc
t
(O) Enable Time of Output after
en
Internal sampling frequency − 130 150 − kHz TJ = 25 °C
Internal sampling frequency
over Temperature Range
Setting of V
DD
1710mA
1 28.5 32 V IDD = 25 mA, TJ = 25 °C, t = 20 ms
2, 3 2832V IOH = 25 mA, TJ = 25 °C, t = 20 ms
2, 3 130 400 mV IOL = 10 mA,
V
= 3.8 V to 24 V
OH
2, 3 − 10 µA Output switched off, TJ ≤ 140 °C,
V
= 3.8 V to 24 V
OH
− 100 150 − kHz
50 100 µsVDD = 12 V,
B>B
+ 2 mT or B<B
on
− 2mT
off
t
r
t
f
R
thSB
SOT-89B
Fig. 3–2: Recommended pad sizes for SOT-89B
Output Rise Time 2, 3 1.2 µsVDD = 12 V, RL= 20 kΩ, CL= 20 pF
Output FallTime 2, 3 0.2 1.6 µsVDD = 12 V, RL= 20 kΩ, CL= 20 pF
Thermal Resistance Junction to
−−150 200 K/W Fiberglass Substrate
Substrate Backside
Dimensions in mm
30 mm x 10mm x 1.5mm,
pad size see Fig. 3–2
8 Micronas
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ADVANCE INFORMATION HAL700
O
3.7. Magnetic Characteristics
utput Voltage
V
O
B
HYS
V
OL
B
OFF
0
B
ON
B
Fig. 3–3: Definition of magnetic switching points for
the HAL 700
Positive flux density values refer to the magnetic s ou th
pole at the branded side of the package.
3.7.1. Magnetic Threshold
(quasistationary: dB/dt<0.5 mT/ms)
at T
= −40 °C to +140 °C, VDD = 3.8 V to 24 V,
J
as not otherwise specified
Typical Characteristics for T
Parameter
T
j
−40 °C 12.5 16.3 20 −20 −16.3 −12.5 mT
25 °C 10.7 14.9 19.1 −19.1 −14.9 −10.7 mT
100 °C tbd tbd tbd tbd tbd tbd mT
140 °C 6.0 10.9 16.0 −16.0 −10.9 −6.0 mT
On point
B
S1on, BS2on
Min. Typ. Max. Min. Typ. Max.
= 25 °C and VDD = 5 V
J
Off point
B
, B
S1off,
S2off
Unit
3.7.2. Matching of B
and BS2
S1
(quasistationary: dB/dt<0.5mT/ms)
= −40 °C to +140 °C, VDD = 3.8 V to 24 V,
at T
J
as not otherwise specified
Typical Characteristics for T
Parameter
T
j
−40 °C −7.5 0 7.5 −7.5 0 7.5 mT
25 °C −7.5 0 7.5 −7.5 0 7.5 mT
100 °C −7.5 0 7.5 −7.5 0 7.5 mT
140 °C −7.5 0 7.5 −7.5 0 7.5 mT
B
− B
S1on
S2on
Min. Typ Max. Min. Typ Max.
= 25 °C and VDD = 5 V
J
B
− B
S1off
S2off
3.7.3. Hysteresis Matching
(quasistationary: dB/dt<0.5 mT/ms)
= −40 °C to +140 °C, VDD = 3.8 V to 24V,
at T
J
as not otherwise specified
Typical Characteristics for T
Parameter (B
T
j
−40 °C 0.85 1.0 1.2 −
25 °C 0.85 1.0 1.2 −
100 °C 0.85 1.0 1.2 −
140 °C 0.85 1.0 1.2 −
S1on
Min. Typ. Max.
= 25 °C and VDD = 5 V
J
− B
S1off
) / (B
S2on
− B
) Unit
S2off
Unit
Micronas 9
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HAL700 ADVANCE INFORMATION
4. Application Notes
4.1. Ambient Temperature
Due to the intern al power dissipation , the temperature
on the silicon c hip (junction temperature T
) is higher
J
than the temperature outside the package (ambient
temperature T
= TA + ∆T
T
J
).
A
At static conditions, the following equation is valid:
∆T = I
* VDD * R
DD
th
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I
and Rth, and the max. value for VDD from the appli-
DD
cation.
For all sensors, the junction temperature range T
specified. The maximum ambient temperature T
is
J
Amax
can be calculated as:
T
Amax
= T
Jmax
− ∆T
4.2. Extended Operating Conditions
4.3. Start -u p Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time t
applying the supply voltage. The parameter t
en(O)
) after
en(O)
is
specified in the Electrical Characteristics (see page 8)
During initialization time, the output states are not
defined and the outputs can toggle. After t
en(O)
both
outputs will be either high or low for a stable magnetic
field (no toggling). The outputs will be low if the applied
magnetic flux density B exceeds B
drops below B
For magnetic fields between B
OFF
.
OFF
states of the Hall sensor after applying V
and high if B
ON
and BON, the output
will be
DD
either low or high. In order to achieve a well-defined
output state, the applied magnetic flux density must be
above B
, respectively, below B
ONmax
OFFmin
.
4.4. EMC and ESD
For applications that cause disturbances on the supply
line or radiated disturbances, a series resistor and a
capacitor are recommended (see Fig. 4–1). The series
resistor and the capa citor should b e placed as closely
as possible to the Hall sensor.
All sensors fulfil the e lectr ical and m agneti c charac teristics when operated within the Recommended Operating Conditions (see page 7)
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is not
tested. For special test conditions, please contact
Micronas.
R
V
220 Ω
R
V
V
EMC
P
4.7 nF
V
1
DD
3 S1-Output
2 S2-Output
L
Please contact Micronas for detailed investigation
reports with EMC and ESD results.
2.4 kΩ
20 pF
R
2.4 kΩ
L
20 pF
4GND
Fig. 4–1: Test circuit for EMC investigations
10 Micronas
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ADVANCE INFORMATION HAL700
Micronas 11
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HAL700 ADVANCE INFORMATION
5. Data Sheet History
1. Advance Information: “HAL 7 00 Dual Hall-Effect
Sensor with Independent Outputs”, Feb. 20, 2001,
6251-477-1AI. First release of the advance information.
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
Order No. 6251-477-1AI
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infr ingements or other right s of third parties whic h may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication and
to make changes to its conte nt, at any t ime, withou t obligatio n to noti fy
any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH .
12 Micronas
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