Datasheet HAL566UA-K, HAL566UA-E, HAL566UA-A, HAL566SF-K, HAL566SF-E Datasheet (Micronas Intermetall)

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Page 1

HAL556, HAL560, HAL566 Two-Wire Hall Effect

Edition Aug. 3, 2000 6251-425-2DS

MICRONAS

Sensor Family

Page 2

HAL55x, HAL56x

Contents

Page Section Title

3 1. Introduction

3 1.1. Features 3 1.2. Family Overview 4 1.3. Marking Code 4 1.4. Operating Junction Temperature Range 4 1.5. Hall Sensor Package Codes 4 1.6. Solderability

5 2. Functional Description

6 3. Specifications

6 3.1. Outline Dimensions 6 3.2. Dimensions of Sensitive Area 6 3.3. Positions of Sensitive Areas 7 3.4. Absolute Maximum Ratings 7 3.5. Recommended Operating Conditions 8 3.6. Electrical Characteristics 9 3.7. Magnetic Characteristics Overview

12 4. Type Descriptions

12 4.1. HAL556 14 4.2. HAL560 16 4.3. HAL566

18 5. Application Notes

18 5.1. Application Circuit 18 5.2. Extended Operating Conditions 18 5.3. Start-up Behavior 19 5.4. Ambient Temperature 19 5.5. EMC and ESD

20 6. Data Sheet History

2 Micronas

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HAL55x, HAL56x

Two-Wire Hall Effect Sensor Family

in CMOS technology

Release Notes: Revision bars indicate significant changes to the previous edition.

1. Introduction

This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points.

The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption).

The active offset compensation leads to constant magnetic characteristics in the full supply voltage and tem- perature range. In addition, the magnetic parameters are robust against mechanical stress effects.

1.2. Family Overview

The types differ according to the mode of switching and the magnetic switching points.

Type Switching

Behavior

556 unipolar very high 12

560 unipolar

inverted

566 unipolar

inverted

Unipolar Switching Sensors:

The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side.

Unipolar Inverted Switching Sensors:

Sensitivity see

Page

low 14

very high 16

The sensors are designed for industrial and automotive applications and operate with supply voltages from 4 V to 24 V in the junction temperature range from –40 °C up to 170 °C. All sensors are available in the SMD-package SOT-89B and in the leaded version TO-92UA.

1.1. Features:

– current output for two-wire applications – junction temperature range from –40 °C up to 170 °C. – operates from 4 V to 24 V supply voltage – operates with static magnetic fields and dynamic mag-

netic fields up to 10 kHz – switching offset compensation at typically 145 kHz – overvoltage and reverse-voltage protection – magnetic characteristics are robust against mechani-

cal stress effects – constant magnetic switching points over a wide supply

voltage range – the decrease of magnetic flux density caused by rising

temperature in the sensor system is compensated by

a built-in negative temperature coefficient of the mag-

netic characteristics

The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side.

– ideal sensor for applications in extreme automotive

and industrial environments – EMC corresponding to DIN 40839

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HAL55x, HAL56x

1.3. Marking Code

All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range.

Type Temperature Range

A K E

HAL556 556A 556K 556E

HAL560 560A 560K 560E

HAL566 566A 566K 566E

1.4. Operating Junction Temperature Range

The Hall sensors from Micronas are specified to the chip temperature (junction temperature T

A: T

= –40 °C to +170 °C

K: TJ = –40 °C to +140 °C

1.6. Solderability

all packages: according to IEC68-2-58

During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded.

Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity.

2 GND

Fig. 1–1: Pin configuration

E: TJ = –40 °C to +100 °C

Note: Due to the high power dissipation at high current

consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer section 5.4. on page 19 for details.

1.5. Hall Sensor Package Codes

HALXXXPA-T

Temperature Range: A, K, or E

Package: SF for SOT-89B

UA for TO-92UA

Type: 556, 560, or 566

Example: HAL556UA-E

→ Type: 556 → Package: TO-92UA → Temperature Range: T

= –40 °C to +100 °C

Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”.

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HAL55x, HAL56x

2. Functional Description

The HAL55x, HAL56x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures.

If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing.

Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. An internal oscillator provides a twophase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/f

osc

HAL55x, HAL56x

Reverse

GND

Voltage & Overvoltage Protection

Hall Plate

Temperature Dependent Bias

Switch

Hysteresis Control

Comparator

Clock

Fig. 2–1: HAL55x, HAL56x block diagram

osc

OFF

DDhigh

DDlow

Current Source

Shunt protection devices clamp voltage peaks at the V

-pin together with external series resistors. Reverse

current is limited at the V

-pin by an internal series

resistor up to –15 V. No external protection diode is needed for reverse voltages ranging from 0 V to –15 V.

1/f

= 6.9 µs

osc

Fig. 2–2: Timing diagram (example: HAL56x)

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HAL55x, HAL56x

3. Specifications

3.1. Outline Dimensions

4.55

0.15

0.3

±0.2

min.

0.25

1.15

1.7

123

0.4

1.5

3.0

sensitive area

∅ 0.2

2.55

top view

0.40.4

1.5

0.3

0.48

0.55

0.36

0.42

±0.1

4.06

123

±0.2

0.75

3.05

±0.2

3.1

14.0 min.

sensitive area

∅ 0.4

±0.1

branded side

SPGS0022-5-A3/2E

Fig. 3–1:

Plastic Small Outline Transistor Package

(SOT-89B)

Weight approximately 0.035 g Dimensions in mm

3.2. Dimensions of Sensitive Area

0.25 mm x 0.12 mm

3.3. Positions of Sensitive Areas

SOT-89B TO-92UA

0.06

±0.04

1.271.27

2.54

branded side

45°

SPGS7002-9-A/2E

0.8

Fig. 3–2:

Plastic Transistor Single Outline Package

(TO-92UA)

Weight approximately 0.12 g Dimensions in mm

Note: For all package diagrams, a mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given.

The improvement of the TO-92UA package with the re- duced tolerances will be introduced end of 2001.

x center of

the package

center of the package

y 0.85 mm nominal 0.9 mm nominal

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HAL55x, HAL56x

3.4. Absolute Maximum Ratings

Symbol Parameter Pin No. Min. Max. Unit

–200

1) 2)

DDZ

Supply Voltage 1 –15

Supply Current through

1 –502)

Protection Device

Storage Temperature Range –65 150 °C

Junction Temperature Range –40

–40

–18 V with a 100 Ω series resistor at pin 1 (–16 V with a 30 Ω series resistor)

as long as TJmax is not exceeded

with a 220 Ω series resistance at pin 1 corresponding to test circuit 1 (see Fig. 5–3)

t<2 ms

t<1000 h

50 200

150 170

mA mA

°C

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.

3.5. Recommended Operating Conditions

Symbol Parameter Pin No. Min. Max. Unit

when using the “A” type or the ”K” type and VDD ≤ 16 V

when using the “A” type and VDD ≤ 13.2 V

Supply Voltage 1 4 24 V

Ambient Temperature for continuos operation

–40 –40

85 125

°C °C

Supply Time for pulsed mode 30 – µs

Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). Please refer to section 5.4. on page 19 for details.

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HAL55x, HAL56x

3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

DDlow

DDhigh

DDZ

osc

en(O)

thJSB

case

Low Current Consumption over Temperature Range

High Current Consumption over Temperature Range

Overvoltage Protection at Supply

Internal Oscillator Chopper Frequency

Internal Oscillator Chopper Frequency over Temperature Range

Enable Time of Output after Setting of V

Output Rise Time 1 0.4 1.6 µs VDD = 12 V, Rs = 30 Ω

Output Fall Time 1 0.4 1.6 µs VDD = 12 V, Rs = 30 Ω

Thermal Resistance Junction to Substrate Backside

SOT-89B

thJA

case

Thermal Resistance Junction to Soldering Point

TO-92UA

B > BON + 2 mT or B < B

– 2 mT for HAL55x, B > B

OFF

1 2 3.3 5 mA

1 12 14.3 17 mA

1 – 28.5 32 V IDD = 25 mA, TJ = 25 °C,

t = 20 ms

– 90 145 – kHz TJ = 25 °C

– 75 145 – kHz

1 20 30 µs

– – 150 200 K/W Fiberglass Substrate

30 mm x 10 mm x 1.5mm, pad size see Fig. 3–3

– – 150 200 K/W

+ 2 mT or B < BON – 2 mT for HAL56x

OFF

5.0

2.0

1.0

Fig. 3–3: Recommended pad size SOT-89B Dimensions in mm

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HAL55x, HAL56x

3.7. Magnetic Characteristics Overview at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

Sensor Parameter On point B Switching Type T

HAL 556 –40 °C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 mT

unipolar 25 °C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 mT

HAL 560 –40 °C 41 46.5 52 47 53 59 4 6.5 10 mT

unipolar 25 °C 41 46.6 52 46 52.5 58.5 3 6 9 mT

inverted 100 °C 41 45.7 52 45 41.1 57.5 2 5.4 8 mT

HAL 566 –40 °C 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 mT

unipolar 25 °C 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 mT

inverted 100 °C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 mT

100 °C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 mT

170 °C 2.8 5 7.6 1 3.5 6.2 0.2 1.5 3.2 mT

170 °C 38 44.2 50 42 49 55.5 2 4.8 8 mT

170 °C 1 3.4 6.3 2.2 4.8 7.6 0.2 1.4 3 mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Off point B

OFF

Hysteresis B

HYS

Note: For detailed descriptions of the individual types, see pages 12 and following.

Unit

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HAL55x, HAL56x

DDhigh

DDlow

–5

= –40 °C

–10

–15

–20

–15–10 –5 0 5 101520253035

= 25 °C

= 100 °C

= 170 °C

Fig. 3–4: Typical current consumption versus supply voltage

HAL55x, HAL56x

DDhigh

= 4 V

= 12 V

= 24 V

DDlow

–50 0 50 100 150 200

°C

Fig. 3–6: Typical current consumption versus ambient temperature

HAL55x, HAL56x

DDhigh

DDlow

0123456

Fig. 3–5: Typical current consumption versus supply voltage

= –40 °C = 25 °C = 100 °C = 170 °C

kHz 200

HAL55x, HAL56x

180

160

osc

140

120

100

= 4 V

= 12 V

= 24 V

–50 0 50 100 150 200

°C

Fig. 3–7: Typ. internal chopper frequency versus ambient temperature

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HAL55x, HAL56x

kHz

200

HAL55x, HAL56x

180

160

osc

140

120

100

= –40 °C

= 25 °C

= 100 °C

= 170 °C

0 5 10 15 20 25 30

Fig. 3–8: Typ. internal chopper frequency versus supply voltage

kHz 200

HAL55x, HAL56x

180

160

osc

140

120

100

= –40 °C

= 25 °C

= 100 °C

= 170 °C

345678

Fig. 3–9: Typ. internal chopper frequency versus supply voltage

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HAL556

4. Type Description

4.1. HAL556

The HAL556 is a very sensitive unipolar switching sensor (see Fig. 4–1).

The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.

For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package.

In the HAL55x, HAL56x two-wire sensor family, the HAL566 is a sensor with the same magnetic characteristics but with an inverted output characteristic.

Magnetic Features:

– switching type: unipolar – very high sensitivity – typical B – typical B

: 6 mT at room temperature

: 4 mT at room temperature

OFF

– operates with static magnetic fields and dynamic mag-

netic fields up to 10 kHz

Applications

The HAL556 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as:

– applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement.

Current consumption

DDhigh

HYS

DDlow

OFF

Fig. 4–1: Definition of magnetic switching points for the HAL556

Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point B

–40 °C 3.4 6.3 7.7 2.1 4.2 5.9 0.8 2.1 3 5.2 mT

25 °C 3.4 6 7.4 2 3.8 5.7 0.5 1.8 2.8 2.7 4.9 6.5 mT

100 °C 3.2 5.5 7.2 1.9 3.7 5.7 0.3 1.8 2.8 4.6 mT

140 °C 3 5.2 7.4 1.2 3.6 6 0.2 1.6 3 4.4 mT

170 °C 2.8 5 7.6 1 3.5 6.2 0.2 1.5 3.2 4.2 mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

The hysteresis is the difference between the switching points B The magnetic offset is the mean value of the switching points B

Off point B

OFF

Hysteresis B

= BON – B

HYS

OFFSET

HYS

OFF

= (BON + B

OFF

Magnetic Offset Unit

) / 2

Changes to the previous edition: – upper limit for B

at –40 °C, 25 °C, and 100 °C; limits for B

HYS

at 25 °C changed

Offset

– specification for 140 °C and 170 °C added

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HAL556

OFF

HAL556

OFF

= –40 °C

0 5 10 15 20 25 30

= 25 °C

= 100 °C

= 170 °C

Fig. 4–2: Typ. magnetic switching points versus supply voltage

HAL556

BONmax

OFF

BONtyp

max

OFF

typ

OFF

min

OFF

V V

–50 0 50 100 150 200

= 4 V = 12 V = 24 V

BONmin

°C

, T

Fig. 4–4: Magnetic switching points versus temperature

Note: In the diagram “Magnetic switching points versus temperature” the curves for B B

min, and B

OFF

HAL556

OFF

whereas typical curves refer to ambient temperature.

OFF

= –40 °C

3 3.5 4.0 4.5 5.0 5.5 6.0

= 25 °C

= 100 °C

= 170 °C

max refer to junction temperature,

OFF

min, BONmax,

Fig. 4–3: Typ. magnetic switching points versus supply voltage

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HAL560

4.2. HAL560

The HAL 560 is a low sensitive unipolar switching sensor with an inverted output (see Fig. 4–5).

The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.

For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package.

Magnetic Features:

– switching type: unipolar inverted – low sensitivity – typical B – typical B

: 45.6 mT at room temperature

: 51.7 mT at room temperature

OFF

– operates with static magnetic fields and dynamic mag-

netic fields up to 10 kHz

Applications

The HAL560 is designed for applications with one magnetic polarity and strong magnetic amplitudes at the sensor position where an inverted output signal is required such as:

– applications with strong magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement.

Current consumption

DDhigh

HYS

DDlow

OFF

Fig. 4–5: Definition of magnetic switching points for the HAL560

Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point B

–40 °C 41 46.5 52 47 53 59 4 6.5 10 49.8 mT

25 °C 41 46.5 52 46 52.5 58.5 3 6 9 49.5 mT

100 °C 41 45.7 52 45 51.1 57.5 2 5.4 8 48.4 mT

140 °C 39 44.8 51 43.5 49.8 56.5 2 5 8 47.3 mT

170 °C 38 44.2 50 42 49 55.5 2 4.8 8 46.6 mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Off point B

OFF

Hysteresis B

HYS

Magnetic Offset Unit

The hysteresis is the difference between the switching points B The magnetic offset is the mean value of the switching points B

= B

HYS

OFFSET

– B

OFF

= (BON + B

OFF

) / 2

Changes to the previous edition: – tighter specification for B

at –40 °C, 25 °C, and 100 °C

OFF

– specification for 140 °C and 170 °C added

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HAL560

OFF

HAL560

= –40 °C

0 5 10 15 20 25 30

= 25 °C

= 100 °C

= 170 °C

Fig. 4–6: Typ. magnetic switching points versus supply voltage

OFF

BONmax

max

OFF

HAL560

typ

BONtyp

min

OFF

BONmin

= 4 V

–50 0 50 100 150 200

= 12 V

= 24 V

°C

, T

Fig. 4–8: Magnetic switching points versus temperature

Note: In the diagram “Magnetic switching points versus temperature” the curves for B B

min, and B

OFF

HAL560

OFF

whereas typical curves refer to ambient temperature.

= –40 °C

3 3.5 4.0 4.5 5.0 5.5 6.0

= 25 °C

= 100 °C

= 170 °C

max refer to junction temperature,

OFF

min, BONmax,

Fig. 4–7: Typ. magnetic switching points versus supply voltage

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HAL566

4.3. HAL566

The HAL566 is a very sensitive unipolar switching sensor with an inverted output (see Fig. 4–9).

For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package.

In the HAL55x, HAL56x two-wire sensor family, the HAL556 is a sensor with the same magnetic characteristics but with a normal output characteristic.

Magnetic Features:

– switching type: unipolar inverted – high sensitivity – typical B – typical B

: 4 mT at room temperature

: 5.9 mT at room temperature

OFF

– operates with static magnetic fields and dynamic mag-

netic fields up to 10 kHz

Applications

The HAL566 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as:

Current consumption

DDhigh

HYS

DDlow

OFF

Fig. 4–9: Definition of magnetic switching points for the HAL566

Magnetic Characteristics at T

= –40 °C to +170 °C, VDD = 4 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point B

–40 °C 2.1 4 5.9 3.4 6 7.7 0.8 2 2.8 5 mT

25 °C 2 3.9 5.7 3.4 5.9 7.2 0.5 2 2.7 3 4.9 6.2 mT

100 °C 1.85 3.8 5.7 3.25 5.6 7 0.3 1.8 2.6 4.7 mT

140 °C 1.3 3.6 6 2.6 5.2 7.3 0.2 1.6 3 4.4 mT

170 °C 1 3.4 6.3 2.2 4.8 7.6 0.2 1.4 3 4.1 mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

The hysteresis is the difference between the switching points B The magnetic offset is the mean value of the switching points B

Off point B

OFF

Hysteresis B

= B

HYS

OFFSET

HYS

– B

OFF

= (BON + B

OFF

Magnetic Offset Unit

) / 2

Changes to the previous edition: – specification for 140 °C and 170 °C added

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HAL566

OFF

HAL566

= –40 °C

0 5 10 15 20 25 30

= 25 °C

= 100 °C

= 170 °C

Fig. 4–10: Typ. magnetic switching points versus supply voltage

max

OFF

HAL566

BONmax

OFF

typ

BONtyp

OFF

min

BONmin

= 4 V

–50 0 50 100 150 200

= 12 V

= 24 V

°C

, T

Fig. 4–12: Magnetic switching points versus temperature

Note: In the diagram “Magnetic switching points versus temperature” the curves for B B

min, and B

OFF

HAL566

OFF

whereas typical curves refer to ambient temperature.

= –40 °C

3 3.5 4.0 4.5 5.0 5.5 6.0

= 25 °C

= 100 °C

= 170 °C

max refer to junction temperature,

OFF

min, BONmax,

Fig. 4–11: Typ. magnetic switching points versus supply voltage

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HAL55x, HAL56x

5. Application Notes

5.1. Application Circuit

Figure 5–1 shows a simple application with a two-wire sensor. The current consumption can be detected by measuring the voltage over R of the sensor, the voltage between pin 1 and 2 (V

. For correct functioning

must be a minimum of 4 V. With the maximum current consumption of 17 mA, the maximum R

can be calcu-

lated as:

SUPmin

17 mA

SIG

* 4V

GND

SUP

Lmax

Fig. 5–1: Application Circuit 1

5.2. Extended Operating Conditions

All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7).

Typically, the sensors operate with supply voltages

)

above 3 V. However, below 4 V, the current consumption and the magnetic characteristics may be outside the specification.

Note: The functionality of the sensor below 4 V is not tested on a regular base. For special test conditions, please contact Micronas.

5.3. Start-up Behavior

Due to the active offset compensation, the sensors have an initialization time (enable time t the supply voltage. The parameter t

) after applying

en(O)

is specified in

en(O)

the Electrical Characteristics (see page 8). During the initialization time, the current consumption is not defined and can toggle between low and high.

For applications with disturbances on the supply line or radiated disturbances, a series resistor R 10 Ω

to 30 Ω) and a capacitor both placed close to the

(ranging from

sensor are recommended (see figure 5–2). In this case, the maximum R

SUP

SIG

Lmax

can be calculated as:

* 4V

SUPmin

17 mA

* R

4.7 nF

GND

Fig. 5–2: Application Circuit 2

HAL556:

After t applied magnetic field B is above B sumption will be low if B is below B

, the current consumption will be high if the

en(O)

. The current con-

OFF

HAL560, HAL566:

In case of sensors with an inverted switching behavior, the current consumption will be low if B > B if B < B

Note: For magnetic fields between B

OFF

and high

OFF

and BON, the current consumption of the HAL sensor will be either low or high after applying V

. In order to achieve a defined

current consumption, the applied magnetic field must be above B

, respectively, below B

OFF

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HAL55x, HAL56x

5.4. Ambient Temperature

Due to internal power dissipation, the temperature on the silicon chip (junction temperature T

) is higher than

the temperature outside the package (ambient temperature T

= TA + ∆T

At static conditions and continuous operation, the following equation is valid:

∆T = I

* VDD * R

For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature T

Amax

can be calculated as:

Amax

= T

Jmax

– ∆T

For typical values, use the typical parameters. For worst case calculation, use the max. parameters for I R

, and the max. value for VDD from the application.

Due to the range of I

, self-heating can be critical.

DDhigh

and

The junction temperature can be reduced with pulsed supply voltage. For supply times (t

) ranging from 30 µs

to 1 ms, the following equation can be used:

DT + IDD*VDD*Rth*

) t

off

5.5. EMC and ESD

For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–2). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor.

Applications with this arrangement passed the EMC tests according to the product standards DIN 40839.

Note: The international standard ISO 7637 is similar to the product standard DIN 40839.

Please contact Micronas for the detailed investigation reports with the EMC and ESD results.

100 Ω

EMC

30 Ω

4.7 nF

GND2

Fig. 5–3: Recommended EMC test circuit

19Micronas

Page 20

HAL55x, HAL56x

6. Data Sheet History

1. Final data sheet: “HAL556, HAL560, HAL566, TwoWire Hall Effect Sensor Family, April 6, 1999, 6251-425-1DS. First release of the final data sheet.

2 Final data sheet: “HAL556, HAL560, HAL566, Two-

Wire Hall Effect Sensor Family, Aug. 3, 2000, 6251-425-2DS. Second release of the final data sheet. Major changes:

– magnetic characteristics for HAL556 and HAL560

changed. Please refer to pages 12 and 14 for details.

– new temperature ranges “K” and “A” added – temperature range “C” removed – outline dimensions for SOT-89B: reduced toler-

ances

– SMD package SOT-89A removed

Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com

Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (08/2000) Order No. 6251-425-2DS

All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.

20 Micronas

Page 21

HAL 11x, HAL 5xx, HAL 62x

Data Sheet Supplement

Subject: Data Sheet Concerned:

Improvement of SOT-89B P ackage HAL 114, 115, 6251-456-2DS, Dec. 20, 1999

HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999 HAL 55x, 56x, 6251-425-1DS, April 6, 1999 HAL 621, 629, 6251-504-1DS, Feb. 3, 2000

Supplement: Edition:

Changes:

– position tolerance of the sensitive area reduced – tolerances of the outline dimensions reduced – thickness of the leadframe changed to 0.15 mm (old 0.125 mm) – SOT-89A will be discontinued in December 2000

sensitive area

∅0.2

0.15

0.3

4.55

1.7 2

No. 1/ 6251-531-1DSS July 4, 2000

±0.2

min.

0.25

1.15

SPGS0022-5-A3/2E

123

0.4

1.5

3.0

branded side

2.55

top view

0.40.4

±0.04

0.06

Position of sensitive area

HAL 114, 115

HAL 55x, HAL 56x HAL 50x, 51x HAL 621, 629

x center of the package center of the package y 0.95 mm nomi nal 0.85 mm nominal

Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given.

Position tolerance of the sensitive area is defined in the package diagram.

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