Datasheet HAL535UA-A, HAL535SF-K, HAL535SF-E, HAL535SF-A, HAL525UA-K Datasheet (Micronas Intermetall)

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Page 1

HAL525, HAL535 Hall Effect Sensor IC

Edition Aug. 30, 2000 6251-465-3DS

MICRONAS

Page 2

HAL525, HAL535

Contents Page Section Title 3 1. Introduction

3 1.1. Features 3 1.2. Family Overview 4 1.3. Marking Code 4 1.4. Operating Junction Temperature Range 4 1.5. Hall Sensor Package Codes 4 1.6. Solderability

5 2. Functional Description

6 3. Specifications

6 3.1. Outline Dimensions 6 3.2. Dimensions of Sensitive Area 6 3.3. Positions of Sensitive Areas 7 3.4. Absolute Maximum Ratings 7 3.5. Recommended Operating Conditions 8 3.6. Electrical Characteristics 9 3.7. Magnetic Characteristics Overview

14 4. Type Description

14 4.1. HAL525 16 4.2. HAL535

18 5. Application Notes

18 5.1. Ambient Temperature 18 5.2. Extended Operating Conditions 18 5.3. Start-up Behavior 18 5.4. EMC and ESD

20 6. Data Sheet History

2 Micronas

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HAL525, HAL535

Hall Effect Sensor Family Release Note: Revision bars indicate significant

changes to the previous edition.

1. Introduction

The HAL525 and HAL535 are Hall switches produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with t he fixed reference values (switching points). Accordingl y, the output transistor is switched on or off.

The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magneti c cha racter istic s are constant in the full s upp ly voltage an d tem peratur e range.

The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from −40 °C up to 150 °C.

1.2. Family Overview

Both sensors have a latching behavior with typically the same sensitiv ity. The difference between HAL 525 and HAL535 is the temperature coefficient of the magnetic switching points.

Type Switching

Behavior

525 latching −2000 ppm/K 14 535 latching −1000 ppm/K 16

Latching Sensors:

Both sensors have a latching beh avior and requires a magnetic nor th and south pole for correct functioning. The output turns low with the magnetic south pole on the branded side of the package an d turns high with the magnetic nor th pole on the branded si de. The output does not chang e if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied.

Typical Temperature Coefficient

see Page

The HAL525 and HAL535 are available in the SMD-package SOT-89B and in the leaded version TO-92UA.

1.1. Features

– switching offset compensation at typically 115 kHz – operates from 3.8 V to 24 V supply voltage – operates with static magnetic fields and dynamic

magnetic fields up to 10 kHz – overvoltage protection at all pins – reverse-voltage protection at V – magnetic characteristics are robust against

mechanical stress effects – short-circuit protected open-drain output by thermal

shut down – constant switching points over a wide supply voltage

range – the decrease of magnetic flux density caused by ris-

ing temperature in the sensor system is compen-

sated by a built-in negative temperature coefficient

of the magnetic characteristics

-pin

– ideal sensor for window lifter, ignition timing, and

revolution counting in extreme automotive and

industrial environments – EMC corresponding to DIN 40839

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HAL525, HAL535

HALXXXPA-T

Temperature Range: A, K, or E Package: SF for SOT-89B

UA for TO-92UA

Type: 525 or 535

Example: HAL525UA-E

→ Type: 525 → Package: TO-92UA → Temperature Range: T

= −40 °C to +100 °C

1.3. Marking Code

All Hall senso rs have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range.

Type T emperature Range

A K E

HAL525 525A 525K 525E HAL535 535A 535K 535E

1.4. Operating Junction Temperature Range

The Hall sensors from Micronas are specified to the chip temperature (junction temperature T

= −40 °C to +170 °C

A: T

= −40 °C to +140 °C

K: T

1.6. Solderability

all packages: according to IEC68-2-58 During soldering reflow processing and manual

reworking, a component bod y temperature of 260 °C should not be exceeded.

Components stored in the original packaging should provide a shelf life of at least 12 months, star ting from the date code prin ted on the labels, even in environments as extreme as 40 °C and 90% relative humidity.

OUT

2GND

Fig. 1–1: Pin configuration

= −40 °C to +100 °C

E: T

The relationship between ambient temperature (T and junction temperature is explained in Section 5.1. on page 18.

1.5. Hall Sensor Package Codes

Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed informa-

tion, please refer to the brochure: “Ordering Codes for Hall Sensors”.

)

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2. Functional Description

The Hall effect sensor is a mono lithic integrated cir cuit that switches in respo nse to m agnetic fi elds. If a m agnetic field with flux li nes per pendicular to t he sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage propo rtional to thi s field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropr iate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing.

GND

Reverse Voltage & Overvoltage Protection

Hall Plate

HAL525, HAL535

Temperature Dependent Bias

Switch

Hysteresis Control

Comparator

Clock

Short Circuit and Overvoltage Protection

Output

OUT

Magnetic offset ca used by mechanical stress is c om-

pensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase cl ock. The Hall voltage is sampled at the end of the f irst phase. At th e end of t he second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/f

osc

Shunt protection devices clamp voltage peaks at the Output-pin and V resistors. Reverse current is limited at the V

-pin together with external series

-pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the V

-pin for

reverse voltages ranging from 0 V to −15 V.

Fig. 2–1: HAL525, HAL535 block diagram

osc

OUT

1/f

osc

= 9 µs

Fig. 2–2: Timing diagram

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HAL525, HAL535

4.55

1.7

min.

0.25

2.55

0.40.4

0.4

1.5

3.0

0.06

±0.04

branded side

SPGS0022-5-A3/2E

123

±0.2

0.15

0.3

∅0.2

sensitive area

top view

1.15

3. Specifications

3.1. Outline Dimensions

Fig. 3–1:

Plastic Small Outline Transistor Package

(SOT-89B)

Weight approximately 0.035 g Dimensions in mm

1.5 4.06

0.3

0.48

0.55

0.36

0.42

45°

SPGS7002-9-A/2E

±0.1

123

1.271.27

2.54

branded side

±0.2

0.75

3.05

±0.2

3.1

14.0 min.

sensitive area

∅0.4

±0.1

0.8

Fig. 3–2: Plastic Transistor Single Outline Package (TO-92UA)

Weight approximately 0.12 g Dimensions in mm

3.2. Dimensions of Sensitive Area

0.25 mm × 0.12 mm

3.3. Positions of Sensitive Areas

SOT-89B TO-92UA

x center of

the package

y 0.95 mm nominal 1.0 mm nominal

Note: For all package diagrams, a mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given.

The improvement of the TO-92UA package with the reduced tolerances will be introduced end of 2001.

center of the package

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HAL525, HAL535

3.4. Absolute Maximum Ratings

Symbol Parameter Pin Name Min. Max. Unit

−V

−I

DDZ

Supply Voltage 1 −15 28

Test Voltage for Supply 1 −24

Reverse Supply Current 1 − 50 Supply Current through

1 −200

Protection Device

− V

200

mA mA

200

V mA mA mA

Omax

Output Voltage 3 −0.3 28 Continuous Output On Current 3 − 50 Peak Output On Current 3 − 250 Output Current through

3 −200

Protection Device

as long as TJmax is not exceeded

with a 220 Ω series resistance at pin 1 corresponding to the test circuit (see Fig. 5–1)

t<2 ms

t<1000 h

Storage Temperature Range −65 150 °C Junction Temperature Range −40

−40

150 170

°C

Stresses beyond those listed in the “Absolut e Maximum Rat ing s” may cause permanent damage to the device. This is a stress rating onl y. Functional operation of the device at these or any ot her c onditions beyond those indi cated in the “Recommended O perating Conditio ns/Character istics” of thi s specification is not imp lied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.

3.5. Recommended Operating Conditions

Symbol Parameter Pin Name Min. Max. Unit

Supply Voltage 1 3.8 24 V Continuous Output On Current 3 0 20 mA Output Voltage

3024V

(output switched off)

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HAL525, HAL535

5.0

2.0

1.0

3.6. Electrical Characteristics at TJ = −40 °C to +170 °C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions. Typical Characteristics for T

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

= 25 °C and VDD = 12 V

DDZ

osc

Supply Current 1 2.3 3 4.2 mA TJ = 25 °C Supply Current over

1 1.6 3 5.2 mA

Tem perature Range Overvoltage Protection

at Supply

1 − 28.5 32 V IDD = 25 mA, TJ = 25 °C,

t = 20 ms

Overvoltage Protection at Output 3 − 28 32 V IOH = 25 mA, TJ = 25 °C,

t = 20 ms Output Voltage 3 − 130 280 mV IOL = 20 mA, TJ = 25 °C Output Voltage over

3 − 130 400 mV IOL = 20 mA

Tem perature Range Output Leakage Current 3 − 0.06 0.1 µA Output switched off,

= 25 °C, VOH = 3.8 to 24 V

Output Leakage Current over Tem perature Range

Internal Oscillator

3 −−10 µA Output switched off,

≤150 °C, VOH = 3.8 to 24V

− 95 115 − kHz TJ = 25 °C,

Chopper Frequency Internal Oscillator Chopper

Frequency over Temperature

− 85 115 − kHz T

= −30 °C to 100 °C

Range

osc

Internal Oscillator Chopper Frequency over Temperature

− 73 115 − kHz

Range

en(O)

thJSB

case SOT-89B

thJA

case TO-92UA

Enable Time of Output after Setting of V

1 − 30 70 µsV

B > B

B < B

= 12 V

+ 2 mT or

ON OFF

− 2 mT

Output Rise Time 3 − 75 400 ns VDD = 12 V,

= 820 Ohm,

= 20 pF

Output Fall Time 3 − 50 400 ns Thermal Resistance Junction

−−150 200 K/W Fiberglass Substrate

to Substrate Backside

30 mm x 10 mm x 1.5 mm,

pad size (see Fig. 3–3) Thermal Resistance Junction

−−150 200 K/W

to Soldering Point

Fig. 3–3: Recommended pad size SOT-89B Dimensions in mm

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HAL525, HAL535

3.7. Magnetic Characteristics Overview at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

= 12 V

Sensor Parameter On point B

Switching Type T HAL525 −40 °C 11.8 15.8 19. 2 −19.2 −15.8 −11.8 27.4 31.6 35.8 mT

latching 25 °C111417−17 −14 −11 24 28 32 mT

HAL535 −40 °C121518−18 −15 −12 25 30 35 mT latching 25 °C 11 13.8 17 −17 −13.8 −11 23 27.6 32 mT

170 °C5 8.5 13 −13 −8.5 −5121725mT

170 °C 6 12 18 −18 −12 −6172431mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Off point B

OFF

Hysteresis B

HYS

Note: For detailed descriptions of the individual types, see pages 14 and following.

Unit

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HAL525, HAL535

–15

–10

–5

–15–10 –5 0 5 10 15 20 25 30 35

= –40 °C

= 25 °C

TA = 170 °C

HAL 525, HAL 535

Fig. 3–4: Typical supply current versus supply voltage

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

12345678

= –40 °C

= 25 °C

= 170 °C

= 100 °C

HAL 525, HAL 535

Fig. 3–5: Typical supply current versus supply voltage

HAL 525, HAL 535

= 3.8 V

= 12 V

= 24 V

–50 0 50 100 150 200

Fig. 3–6: Typical supply current versus ambient temperature

°C

kHz

160

HAL 525, HAL 535

140

osc

120

100

= 4.5 V...24 V

= 3.8 V

–50 0 50 100 150 200

°C

Fig. 3–7: Typ. internal chopper frequency versus ambient temperature

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HAL525, HAL535

400

HAL 525, HAL 535

= 20 mA

350

300

= 170 °C

250

200

150

100

= 100 °C

= 25 °C

= –40 °C

0 5 10 15 20 25 30

Fig. 3–8: Typical output low voltage versus supply voltage

400

300

HAL 525, HAL 535

= 3.8 V

= 4.5 V

= 24 V

= 20 mA

200

100

–50 0 50 100 150 200

°C

Fig. 3–10: Typical output low voltage versus ambient temperature

600

500

HAL 525, HAL 535

= 20 mA

400

300

TA=170 °C

200

TA=100 °C

TA=25 °C

100

34567

TA= –40 °C

Fig. 3–9: Typical output low voltage versus supply voltage

TA=170 °C

–1

–2

–3

–4

TA=150 °C

TA=100 °C

TA=25 °C

HAL 525, HAL 535

TA= –40 °C

–5

–6

15 20 25 30 35

Fig. 3–11: Typ. output high current versus output voltage

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HAL525, HAL535

–50 0 50 100 150 200

°C

µA

VOH = 24 V

= 3.8 V

–5

–4

–3

–2

–1

HAL 525, HAL 535

Fig. 3–12: Typical output leakage current versus ambient temperature

–30

–20

–10

0.01 0.10 1.00 10.00 100.001000.00

dBµA

= 12 V

= 25 °C Quasi-PeakMeasurement

max.spurious signals

1 10 100 1000

MHz

HAL 525, HAL 535

Fig. 3–13: Typ. spectrum of supply current

dBµV

HAL 525, HAL 535

= 12 V

= 25 °C

Quasi-PeakMeasurement test circuit

max.spurious signals

0.01 0.10 1.00 10.00 100.001000.00

1 10 100 1000

Fig. 3–14: Typ. spectrum of supply voltage

MHz

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HAL525, HAL535

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HAL525

4. Type Description

4.1. HAL525

The HAL525 is a latching sensor (see Fig. 4–1). The output tur ns low with the m agnetic south pole on

the branded side of the package and tur ns high with the magnetic north pole on the b randed si de. The o utput does not change if the magnetic field is rem oved. For changing the output state, the opposi te magnetic field polarity must be applied.

For correct functioning in the application, the sensor requires both magnet ic polari ties (nor th an d south) on the branded side of the package.

Magnetic Features:

– switching type: latching – low sensitivity –typical B –typical B

: 14 mT at room temperature

: −14 mT at room temperature

OFF

– operates with static magnetic fields and dynamic

magnetic fields up to 10 kHz

Applications

The HAL525 is the optimal sensor for applications with alternating magnetic signals such as:

– multipole magnet applications, – ro tating speed measurement, – commutation of brushless DC motors, and – window lifter.

Output Voltage

HYS

OFF

Fig. 4–1: Definition of magnetic switching points for the HAL525

– typical temperature coefficient of magnetic switching

points is −2000 ppm/K

Magnetic Characteristics at T Typical Characteristics for V

= −40 °C to +170 °C, VDD = 3.8 V to 24 V,

= 12 V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point B

−40 °C 11.8 15.8 19.2 −19.2 −15.8 −11.8 27.4 31.6 35.8 0 mT 25 °C11 14 17 −17 −14 −11 24 28 32 −20 2 mT

100 °C 8 11 15.5 −15.5 −11 −8 18.5 22 28. 7 0 mT 140 °C 6.5 10 14 −14 −10 −6.5 16 20 26 0 mT 170 °C5 8.5 13 −13 −8.5 −5121725 0 mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Off point B

OFF

Hysteresis B

HYS

Magnetic Offset Unit

The hysteresis is the difference between the switching points B The magnetic offset is the mean value of the switching points B

= BON − B

HYS

OFFSET

= (BON + B

OFF

) / 2

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HAL525

OFF

HAL525

–5

= –40 °C

= 25 °C

= 100 °C

= 170 °C

OFF

–10

–15

–20

0 5 10 15 20 25 30

Fig. 4–2: Typ. magnetic switching points versus supply voltage

HAL525

BONmax

OFF

BONtyp

= 3.8 V

= 4.5 V...24 V

BONmin

max

OFF

typ

OFF

–5

–10

–15

min

OFF

–20

–50 0 50 100 150 200

, T

°C

Fig. 4–4: Magnetic switching points versus temperature

Note: In the diagram “Magnetic switching points versus ambient temperature” the curves for B

OFF

HAL525

max, B ature, whereas typical curves refer to ambient temperature.

–5

= –40 °C

= 25 °C

= 100 °C

= 170 °C

OFF

–10

–15

–20

3 3.5 4.0 4.5 5.0 5.5 6.0

min, and B

OFF

max refer to junction temper -

OFF

min, B

ON-

Fig. 4–3: Typ. magnetic switching points versus supply voltage

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HAL535

4.2. HAL535

The HAL535 is a latching sensor (see Fig. 4–5). The output tur ns low with the m agnetic south pole on

For correct functioning in the application, the sensor requires both magnet ic polari ties (nor th an d south) on the branded side of the package.

Magnetic Features:

– switching type: latching – low sensitivity –typical B –typical B

: 13.5 mT at room temperature

: −13.5 mT at room temperature

OFF

– operates with static magnetic fields and dynamic

magnetic fields up to 10 kHz

Applications

The HAL535 is the optimal sensor for applications with alternating magnetic signals such as:

– multipole magnet applications, – ro tating speed measurement, – commutation of brushless DC motors, and – window lifter.

Output Voltage

HYS

OFF

Fig. 4–5: Definition of magnetic switching points for the HAL535

– typical temperature coefficient of magnetic switching

points is −1000 ppm/K

Magnetic Characteristics at T Typical Characteristics for V

= −40 °C to +170 °C, VDD = 3.8 V to 24 V,

= 12 V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point B

−40 °C12 15 18 −18 −15 −12 25 30 35 0 mT 25 °C 11 13.8 17 −17 −13.8 −11 23 27.6 32 0 mT

100 °C 9 13 17 −17 −13 −9 20 26 31.5 0 mT 140 °C 7 12.5 17 −17 −12.5 −7182531 0 mT 170 °C 6 12 18 −18 −12 −6172431 0 mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Off point B

OFF

Hysteresis B

HYS

Magnetic Offset Unit

The hysteresis is the difference between the switching points B The magnetic offset is the mean value of the switching points B

= BON − B

HYS

OFFSET

= (BON + B

OFF

) / 2

16 Micronas

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HAL535

OFF

–5

–10

= –40 °C

= 25 °C

= 100 °C

= 170 °C

OFF

–15

–20

0 5 10 15 20 25 30

Fig. 4–6: Typ. magnetic switching points versus supply voltage

HAL535

BONmax

OFF

BONtyp

BONmin

= 3.8 V

= 4.5 V...24 V

–5

max

OFF

–10

typ

OFF

–15

min

–20

–50 0 50 100 150 200

OFF

°C

, T

Fig. 4–8: Magnetic switching points versus temperature

Note: In the diagram “Magnetic switching points ver-

min, B

ON-

HAL535

sus ambient temperature” the curves for B max, B

min, and B

OFF

max refer to junction temper -

OFF

ature, whereas typical curves refer to ambient temperature.

= –40 °C = 25 °C = 100 °C = 170 °C

OFF

–5

–10

–15

–20

3 3.5 4.0 4.5 5.0 5.5 6.0

Fig. 4–7: Typ. magnetic switching points versus supply voltage

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HAL525, HAL535

5. Application Notes

5.1. Ambient Temperature

Due to the intern al power dissipation , the temperature on the silicon c hip (junction temperature T

) is higher

than the temperature outside the package (ambient temperature T

= TA + ∆T

At static conditions, the following equation is valid: ∆T = I

* VDD * R

For typical values, use the typical parameters. For worst case calculation, use the max. parameters for

and Rth, and the max. value for VDD from the appli-

cation. For all sensors, the junction temperature range T

specified. The maximum ambient temperature T

Amax

can be calculated as: T

Amax

= T

Jmax

− ∆T

5.2. Extended Operating Conditions

All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7).

5.4. EMC and ESD

For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor

are recommended (see Fig. 5–1). The series resistor and the capacitor shoul d be placed as close ly as possible to the HAL sensor.

Applications with this arrangement passed the EMC tests according to the product standards DIN 40839).

Note: The international standard ISO 7637 is similar to the used product standard DIN 40839.

Please contact M icronas for the detailed investigation reports with the EMC and ESD results.

220 Ω

1.2 kΩ

20 pF

V V

EMC P

4.7 nF

OUT

GND

Fig. 5–1: Test circuit for EMC investigations

Supply Voltage Below 3.8 V

Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some cha racteristics may be outside the specification.

Note: The functionality of the sensor below 3.8 V is not tested. For special test condit ions, pleas e cont act Micronas.

5.3. Start-up Behavior

Due to the active offset compensation, the sensors have an initialization time (enable time t applying the supply voltage. The parameter t

en(O)

) after

en(O)

specified in the Electrical Characteristics (see page 8). During the initialization time, the output state is not

defined and the output can toggl e. After t

en(O)

, the out-

put will be low if the applied magneti c field B is above

. The output will be high if B is below B

For magnetic fields between B

and BON, the output

OFF

state of the HAL sensor after applying V

OFF

will be either low or high. In order to achieve a well-defined output state, the appli ed ma gnetic field mus t be a bove B

ONmax

, respectively, below B

OFFmin

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HAL525, HAL535

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HAL525, HAL535

6. Data Sheet History

1. Final data sheet: “HAL525 Hall Effect Sens or IC”, April 23, 1997, 6251-465-1DS. First release of the final data sheet.

2. Final data sheet: “HAL525 Hall Effect Sensor IC”, March 10, 1999, 6251-465-2DS. Second release of the final data sheet. Major changes:

– additional package SOT-89B – outline dimensions for SOT-89A and TO-92UA

changed – electrical characteristics changed – section 4.2.: Extended Operating Conditions added – section 4.3.: Start-up Behavior added

3. Final data sheet: “HAL525, HAL535 Hall Effect Sensor Family”, Aug. 30, 2000, 6251-465-3DS. Third release of the final data sheet. Major changes:

– new sensor HAL 535 added – outline dimensions for SOT-89B: reduced toler-

ances – SMD package SOT-89A removed – temperature range "C" removed

Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com

Printed in Germany Order No. 6251-465-3DS

All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infr ingements or other right s of third parties whic h may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its conte nt, at any t ime, withou t obligatio n to noti fy any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH .

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HAL 11x, HAL 5xx, HAL 62x

Data Sheet Supplement

Subject: Data Sheet Concerned:

Improvement of SOT-89B P ackage HAL 114, 115, 6251-456-2DS, Dec. 20, 1999

HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999 HAL 55x, 56x, 6251-425-1DS, April 6, 1999 HAL 621, 629, 6251-504-1DS, Feb. 3, 2000

Supplement: Edition:

Changes:

– position tolerance of the sensitive area reduced – tolerances of the outline dimensions reduced – thickness of the leadframe changed to 0.15 mm (old 0.125 mm) – SOT-89A will be discontinued in December 2000

sensitive area

∅0.2

0.15

0.3

4.55

1.7 2

No. 1/ 6251-531-1DSS July 4, 2000

±0.2

min.

0.25

1.15

SPGS0022-5-A3/2E

123

0.4

1.5

3.0

branded side

2.55

top view

0.40.4

±0.04

0.06

Position of sensitive area

HAL 114, 115

HAL 55x, HAL 56x HAL 50x, 51x HAL 621, 629

x center of the package center of the package y 0.95 mm nominal 0.85 mm nominal

Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given.

Position tolerance of the sensitive area is defined in the package diagram.

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