Datasheet HAL300UA-E, HAL300UA-C, HAL300UA-A, HAL300SO-E, HAL300SO-C Datasheet (Micronas Intermetall)

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HAL300 Differential Hall Effect Sensor IC

Edition July 15, 1998 6251-345-1DS

MICRONAS

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HAL300

Differential Hall Effect Sensor IC

in CMOS technology

Introduction

The HAL 300 is a differential Hall switch produced in CMOS technology . The sensor includes 2 temperaturecompensated Hall plates (2.05 mm apart) with active offset compensation, a differential amplifier with a Schmitt trigger, and an open-drain output transistor (see Fig. 2).

The HAL300 is a differential sensor which responds to spatial differences of the magnetic field. The Hall voltages at the two Hall plates, S

and S2, are amplified with

a differential amplifier. The differential signal is compared with the actual switching level of the internal Schmitt trigger. Accordingly, the output transistor is switched on or off.

The sensor has a bipolar switching behavior and requires positive and negative values of ∆B = B

– BS2 for

correct operation. The HAL300 is an ideal sensor for applications with a ro-

tating multi-pole-ring in front of the branded side of the package (see Fig. 4 and Fig. 5), such as ignition timing, anti-lock brake systems, and revolution counting.

– operates with magnetic fields from DC to 10 kHz – output turns low with magnetic south pole on branded

side of package and with a higher magnetic flux density in sensitive area S1 as in S2

– on-chip temperature compensation circuitry mini-

mizes shifts of the magnetic parameters over temperature and supply voltage range

– the decrease of magnetic flux density caused by rising

temperature in the sensor system is compensated by a built-in negative temperature coefficient of hysteresis

– EMC corresponding to DIN 40839

Marking Code

Type Temperature Range

A E C

HAL300SO, HAL300UA

300A 300E 300C

Operating Junction Temperature Range (TJ)

For applications in which a magnet is mounted on the back side of the package (back-biased applications), the HAL320 is recommended.

The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature.

The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from –40 °C up to 150 °C.

The HAL300 is available in a SMD-package (SOT-89A) and in a leaded version (TO-92UA).

Features:

– distance between Hall plates: 2.05 mm – operates from 4.5 V to 24 V supply voltage – switching offset compensation at 62 kHz – overvoltage protection – reverse-voltage protection at V

-pin

– short-circuit protected open-drain output by thermal

shutdown

= –40 °C to +170 °C

A: T

E: T

= –40 °C to +100 °C

C: T

= 0 °C to +100 °C

The relationship between ambient temperature (T junction temperature (T

) is explained on page 11.

) and

Hall Sensor Package Codes

HALXXXPA-T

Temperature Range: A, E, or C Package: SO for SOT-89A,

UA for TO-92UA

Type: 300

Example: HAL300UA-E

→ Type: 300 → Package: TO-92UA → Temperature Range: T

= –40 °C to +100 °C

Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”.

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HAL300

Solderability

– Package SOT-89A: according to IEC68-2-58 – Package TO-92UA: according to IEC68-2-20

OUT

2 GND

Fig. 1: Pin configuration

Functional Description

This Hall effect sensor is a monolithic integrated circuit with 2 Hall plates 2.05 mm apart that switches in response to differential magnetic fields. If magnetic fields with flux lines at right angles to the sensitive areas are applied to the sensor, the biased Hall plates force Hall voltages proportional to these fields. The difference of the Hall voltages is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the differential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The builtin hysteresis eliminates oscillation and provides switching behavior of the output without oscillation.

Magnetic offset caused by mechanical stress at the Hall plates is compensated for by using the “switching offset compensation technique”: An internal oscillator provides a two phase clock (see Fig. 3). The difference of the Hall voltages is sampled at the end of the first phase. At the end of the second phase, both sampled differential Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The amount of time that elapses from crossing the magnetic switch level to the actual switching of the output can vary between zero and 1/f

osc

HAL300

GND

Reverse

Voltage & Overvoltage

Protection

Hall Plate

Temperature Dependent Bias

Switch

Hysteresis Control

Comparator

Fig. 2: HAL300 block diagram

osc

OUT

1/f

= 16 µs

osc

Fig. 3: Timing diagram

Clock

Short Circuit & Overvoltage Protection

Output

OUT

Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the V

-Pin by an

internal series resistor up to –15 V . No external reverse protection diode is needed at the V

-Pin for values

ranging from 0 V to –15 V.

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HAL300

Outline Dimensions

0.125

0.7

±0.2

±0.05

1.53

±0.1

4.55

1.7

x1x

123

0.40.4

0.4

1.5

sensitive area S sensitive area S

±0.1

2.6

top view

±0.1

0.48

0.55

4.06

2.03

x1x

123

0.5

3.1

3.05

14.0 min.

sensitive area S sensitive area S

±0.1

1 2

1.5

±0.05

0.3

0.36

3.0

branded side

SPGS7001-6-B3/1E

Fig. 4:

Plastic Small Outline Transistor Package

(SOT-89A)

Weight approximately 0.04 g Dimensions in mm

0.06

±0.04

0.42

1.271.27

2.54

branded side

45°

SPGS7002-6-B/1E

0.8

Fig. 5:

Plastic Transistor Single Outline Package

(TO-92UA)

Weight approximately 0.12 g Dimensions in mm

Dimensions of Sensitive Areas

0.08 mm x 0.17 mm

Positions of Sensitive Areas

SOT-89A TO-92UA

x1 = –1.025 mm ± 0.2 mm

x2 = 1.025 mm ± 0.2 mm

x2 – x1 = 2.05 mm ± 0.01 mm

y = 0.98 mm ± 0.2 mm y = 1.0 mm ± 0.2 mm

x1 and x2 are referenced to the center of the package

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HAL300

Absolute Maximum Ratings

Symbol Parameter Pin No. Min. Max. Unit

–V –I

DDZ

Supply Voltage 1 –15 28 Test Voltage for Supply 1 –24 Reverse Supply Current 1 – 50 Supply Current through

1 –200

Protection Device

Omax

Output Voltage 3 –0.3 28 Continuous Output On Current 3 – 30 mA Peak Output On Current 3 – 250 Output Current through

3 –200

Protection Device

as long as TJmax is not exceeded

with a 220 Ω series resistance at pin 1 corresponding to test circuit 1

t<2 ms

t<1000h

Storage Temperature Range –65 150 °C Junction Temperature Range –40

–40

– V

200

150

170

mA mA

°C

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only . Functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Symbol Parameter Pin No. Min. Max. Unit

Supply Voltage 1 4.5 24 V Continuous Output On Current 3 – 20 mA Output Voltage 3 – 24 V Series Resistor 1 – 270 Ω

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HAL300

Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for T

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

= 25 °C and VDD = 12 V

DDZ

osc

en(O)

Supply Current 1 4.0 5.5 6.8 mA TJ = 25 °C Supply Current over

1 2.5 5 7.5 mA

T emperature Range Overvoltage Protection

at Supply

1 – 28.5 32.5 V IDD = 25 mA, TJ = 25 °C,

t = 20 ms

Overvoltage Protection at Output 3 – 28 32.5 V IOL = 25 mA, TJ = 25 °C,

t = 20 ms

Output Voltage 3 – 180 250 mV VDD = 12 V, IO = 20 mA,

= 25 °C

Output Voltage over

3 – 180 400 mV IO = 20 mA

T emperature Range Output Leakage Current 3 – 0.06 1 µA VOH = 4.5 V...24 V,

, TJ = 25 °C

OFF

, TJ ≤ 150 °C

OFF

Output Leakage Current over T emperature Range

Internal Oscillator

DB < DB

3 – 0.06 10 µA VOH = 4.5 V...24 V,

DB < DB

– 42 62 75 kHz TJ = 25 °C

Chopper Frequency Internal Oscillator Chopper Fre-

– 36 62 78 kHz

quency over T emperature Range Enable Time of Output

after Setting of V

3 – 35 – µs

VDD = 12 V,

DB > DB DB < DB

ON OFF

+ 2mT or

– 2mT

thJSB

case SOT-89A

thJS

case TO-92UA

Output Rise Time 3 – 80 400 ns VDD = 12 V, RL = 820 Ω,

CL = 20 pF

Output Fall Time 3 – 45 400 ns VDD = 12 V, RL = 820 Ω,

CL = 20 pF

Thermal Resistance Junction to Substrate Backside

– 150 200 K/W Fiberglass Substrate

30 mm x 10 mm x 1.5mm, pad size see Fig. 7

Thermal Resistance

– 150 200 K/W

Junction to Soldering Point

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HAL300

Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4.5 V to 24 V Typical Characteristics for V

Magnetic flux density values of switching points (Condition: –10 mT < B0 < 10 mT) Positive flux density values refer to the magnetic south pole at the branded side ot the package. ∆B = B

Parameter –40 °C 25 °C 100 °C 170 °C Unit

= 12 V

– B

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

On point ∆B ∆B > ∆B

Off point ∆B ∆B < ∆B

OFF

Hysteresis ∆B

= ∆BON – ∆B

HYS

Offset ∆B (∆BON + ∆B

OFF min

OFF

OFFSET

OFF

)/2

0.2 1.2 2.2 0 1.2 2.2 –0.5 1.0 2.5 –2.0 0.5 3.0 mT

–2.2 –1.0 –0.2 –2.2 –1.0 0 –2.5 –1.1 0.5 –3.0 –1.2 2.0 mT

1.2 2.2 3.0 1.2 2.2 3.0 1.0 2.1 3.0 0.8 1.7 3.0 mT

OFF

–1.1 0.1 1.1 –1.1 0.1 1.1 –1.5 –0.1 1.5 –2.5 –0.5 2.5 mT

Output Voltage

OFF

HYS

ON max

∆B = BS1 – B

Fig. 6: Definition of switching points and hysteresis

5.0

2.0

1.0

Fig. 7: Recommended pad size SOT-89A Dimensions in mm

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HAL300

2.5

2.0

OFF

1.5 DB

1.0

= –40 °C

0.5

0.0

= 25 °C

= 150 °C

–0.5

–1.0

OFF

–1.5

–2.0

–2.5

0 5 10 15 20 25 30

Fig. 8: Typical magnetic switch points versus supply voltage

2.5

2.0

OFF

1.5 DB

1.0

0.5

0.0

VDD = 4.5 V V

= 12 V

= 24 V

–0.5

–1.0

OFF

–1.5

–2.0

–2.5

–50 0 50 100 150 200

°C

Fig. 10: Typical magnetic switch points versus ambient temperature

2.5

2.0

OFF

1.5

1.0

0.5

0.0

–0.5

–1.0

= –40 °C

= 25 °C

= 150 °C

OFF

–1.5

–2.0

–2.5

3 3.5 4.0 4.5 5.0 5.5 6.0

Fig. 9: Typical magnetic switch points versus supply voltage

= –40 °C

= 25 °C

= 150 °C

–5

–10

–15

–15 –10 –5 0 5 1015202530

Fig. 11: Typical supply current versus supply voltage

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HAL300

12345678

Fig. 12: Typical supply current versus supply voltage

= –40 °C

= 25 °C

= 150 °C

500

IO = 20 mA

400

= 150 °C

300

200

= 25 °C

= –40 °C

100

0 5 10 15 20 25 30

Fig. 14: Typical output low voltage versus supply voltage

VDD = 24 V

–50 0 50 100 150 200

Fig. 13: Typical supply current versus ambient temperature

= 12 V

VDD = 4.5 V

°C

500

IO = 20 mA

400

VDD = 4.5 V

300

VDD = 24 V

200

100

–50 0 50 100 150 200

Fig. 15: Typical output low voltage versus ambient temperature

°C

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HAL300

kHz

= 25 °C

osc

0 5 10 15 20 25 30

Fig. 16: T ypical internal chopper frequency versus supply voltage

kHz

osc

–50 0 50 100 150 200

VDD = 12 V

°C

Fig. 18: T ypical internal chopper frequency versus ambient temperature

kHz

= 25 °C

osc

3 3.5 4.0 4.5 5.0 5.5 6.0

Fig. 17: T ypical internal chopper frequency versus supply voltage

µA

–1

–2

–3

–4

–5

–50 0 50 100 150 200

= 24 V

VDD = 5 V

°C

Fig. 19: Typical output leakage current versus ambient temperature

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Ambient Temperature

HAL300

µA

VDD = 5 V

= 125 °C

–1

–2

–3

–4

–5

20 22 24 26 28 30

= 75 °C

= 25 °C

Fig. 20: Typical output leakage current versus output voltage

Due to the internal power dissipation, the temperature on the silicon chip (junction temperature T

) is higher

than the temperature outside the package (ambient temperature T

= TA + ∆T

At static conditions, the following equations are valid:

– for SOT-89A: ∆T = I – for TO-92UA: ∆T = IDD * VDD * R

* VDD * R

thJSB

thJA

For typical values, use the typical parameters. For worst case calculation, use the max. parameters for I R

, and the max. value for VDD from the application.

Test Circuits for Electromagnetic Compatibility

Test pulses V

220 Ω

corresponding to DIN 40839.

EMC

and

Application Notes

Mechanical stress can change the sensitivity of the Hall plates and an offset of the magnetic switching points may result. External mechanical stress to the package can influence the magnetic parameters if the sensor is used under back-biased applications. This piezo sensitivity of the sensor IC cannot be completely compensated for by the switching offset compensation technique.

For back-biased applications, the HAL320 is recommended. In such cases, please contact our Application Department. They will provide assistance in avoiding applications which may induce stress to the ICs. This stress may cause drifts of the magnetic parameters indicated in this data sheet.

For electromagnetic immunity , it is recommended to apply a 4.7 nF capacitor between V

(pin 1) and Ground

(pin 2). For automotive applications, a 220 W series re- sistor to pin 1 is recommended. Because of the I

peak at 4.1 V, the series resistor should not be greater than 270 Ω. The series resistor and the capacitor should be placed as close as possible to the IC.

1.2 kΩ

20 pF

V V

EMC P

4.7 nF

GND

OUT

Fig. 21: Test circuit 2: test procedure for class A

220 Ω

EMC

4.7 nF

GND

OUT

680 Ω

Fig. 22: Test circuit 1: test procedure for class C

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HAL300

Interferences conducted along supply lines in 12 V onboard systems

Product standard: DIN 40839 part 1

Pulse Level Us in V Test

circuit

1 IV –100 1 5000 C 5 s pulse interval 2 IV 100 1 5000 C 0.5 s pulse interval 3a IV –150 2 1 h A 3b IV 100 2 1h A 4 IV –7 2 5 A 5 IV 86.5 1 10 C 10 s pulse interval

Electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines

Product standard: DIN 40839 part 3

Pulse Level Us in V Test

circuit

1 IV –30 2 500 A 5 s pulse interval 2 IV 30 2 500 A 0.5 s pulse interval

Pulses/ Time

Function Class

Remarks

3a IV –60 2 10 min A 3b IV 40 2 10 min A

Radiated Disturbances

Product standard: DIN 40839 part 4

Test Conditions

– Temperature: Room temperature (22...25 °C) – Supply voltage: 13 V – Lab equipment: TEM cell 220 MHz (VW standard)

with adaptor board 455 mm, device 80 mm over ground

– Frequency range: 5...220 MHz; 1 MHz steps – Test circuit 2 with R

Tested Devices and Results

Type Field

= 1.2 kΩ

strength

Modulation Result

HAL300 > 200 V/m 1 kHz 80 % output voltage stable on the level high or low

low level t0.4 V, high level u90% of V

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HAL300

Data Sheet History

1. Final data sheet: “HAL300 Differential Hall Effect Sensor IC”, July 15, 1998, 6251-345-1DS. First release of the final data sheet.

Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com

Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (07/1998) Order No. 6251-345-1DS

All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability . Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.

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HAL 300, HAL 320

Data Sheet Supplement

Subject: Data Sheet Concerned:

Improvement of SOT-89B Packag e HAL 300, 6251-345-1DS, Edition July 15, 1998

HAL 320, 6251-439-1DS, Edition July 15, 1998

Supplement: Edition:

Changes:

– position tolerance of the sensitive area reduced – tolerances of the outline dimensions reduced – thickness of the leadframe changed to 0.15 mm (old 0.125 mm) – HAL 300 now available in SOT-89B – SO T-89A will be discontinued in December 2000

4.55

0.15

0.3

±0.2

min.

0.25

1.15

1.7

x1x

123

0.40.4

0.4

1.5

sensitive area S

∅0.2

sensitive area S

∅0.2

2.55

top view

No. 1/ 6251-532-1DSS July 4, 2000

3.0

branded side

±0.04

SPGS0022-5-B3/1E

0.06

Position of sensitive area

HAL 300 HAL 320

1+x2

= x

(2.05±0.001) mm (2.25±0.001) mm

1.025 mm nominal 1.125 mm nominal

y 0.95 mm nominal 0.95 mm nominal

Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is e xplicitly given.

Position tolerances of the sensitive areas are defined in the package diagram.

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