Datasheet HAL115UA-K, HAL115UA-E, HAL115UA-C, HAL115SF-E, HAL115SF-C Datasheet (Micronas Intermetall)

HAL114, HAL115 Hall Effect Sensor Family

Edition Dec. 20, 1999 6251-456-2DS

MICRONAS

HAL11x

Contents

Page Section Title

3 1. Introduction

3 1.1. Features 3 1.2. Family Overview 3 1.3. Marking Code 4 1.4. Operating Junction Temperature Range 4 1.5. Hall Sensor Package Codes 4 1.6. Solderability

4 2. Functional Description

5 3. Specifications

5 3.1. Outline Dimensions 5 3.2. Dimensions of Sensitive Area 5 3.3. Positions of Sensitive Areas 6 3.4. Absolute Maximum Ratings 6 3.5. Recommended Operating Conditions 7 3.6. Electrical Characteristics 8 3.7. Magnetic Characteristics

10 4. Type Descriptions

10 4.1. HAL114 12 4.2. HAL115

14 5. Application Notes

14 5.1. Application Circuit 14 5.2. Ambient Temperature 14 5.3. Extended Operating Conditions 14 5.4. Start-up Behavior

16 6. Data Sheet History

2 Micronas

HAL11x

Hall Effect Sensor Family

in CMOS technology

Release Notes: Revision bars indicate significant changes to the previous edition.

1. Introduction

The HAL 11x family consists of different Hall switches produced in CMOS technology.

All sensors include a temperature-compensated Hall plate, a comparator, and an open-drain output transistor . The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in the switching behavior.

The sensors are designed for industrial and automotive applications and operate with supply voltages from

4.5 V to 24 V in the ambient temperature range from –40 °C up to 125 °C.

All sensors are available in an SMD-package (SOT-89B) and in a leaded version (TO-92UA).

1.2. Family Overview

The types differ according to the mode of switching.

Type Switching Behavior see Page HAL114 unipolar 10 HAL115 bipolar 12

Bipolar Switching Sensors:

The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not.

Unipolar Switching Sensors:

The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side.

1.1. Features

– operates from 4.5 V to 24 V supply voltage – overvoltage protection – reverse-voltage protection at V – short-circuit protected open-drain output by thermal

shut down

– operates with static magnetic fields and dynamic mag-

netic fields up to 20 kHz

– stable switching points over a wide supply voltage

range

– the decrease of magnetic flux density caused by rising

temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics

DD

-pin

1.3. Marking Code

All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range.

Type Temperature Range

K E C

HAL114 114K 114E 114C HAL115 115K 115E 115C

3Micronas

HAL11x

G

1.4. Operating Junction Temperature Range

The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ).

K: TJ = –40 °C to +140 °C E: TJ = –40 °C to +100 °C

= 0 °C to +100 °C

C: T

J

The relationship between ambient temperature (TA) and junction temperature is explained in section 5.2. on page

14.

1.5. Hall Sensor Package Codes

HALXXXPA-T

Temperature Range: K, E, or C

Package: SF for SOT-89B

UA for TO-92UA (SO for SOT-89A)

Type: 11x

Example: HAL114UA-E

→ Type: 114 → Package: TO-92UA → Temperature Range: T

= –40 °C to +100 °C

J

Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”.

2. Functional Description

The HAL11x sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing.

Shunt protection devices clamp voltage peaks at the Output-pin and V resistors. Reverse current is limited at the V

-pin together with external series

DD

-pin by an

DD

internal series resistor up to –15 V . No external reverse protection diode is needed at the V

-pin for reverse

DD

voltages ranging from 0 V to –15 V.

HAL11x

Reverse

V

DD

ND

1

2

Voltage & Overvoltage Protection

Temperature Dependent Bias

Hall Plate

Hysteresis Control

Comparator

Short Circuit & Overvoltage Protection

Output

OUT

3

1.6. Solderability

all packages: according to IEC68-2-58 During soldering reflow processing and manual

reworking, a component body temperature of 260 °C should not be exceeded.

Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity.

V

DD

1

OUT

3

2 GND

Fig. 1–1: Pin configuration

Fig. 2–1: HAL11x block diagram

4 Micronas

3. Specifications

3.1. Outline Dimensions

0.125

0.7

±0.2

4

min.

0.25

1.53

±0.05

123

±0.1

4.55

x1 x2

1.7 2

0.4

1.5

3.0

HAL11x

±0.1

0.48

0.55

0.42

4.06

x2x1

123

1.271.27

(2.54)

±0.2

0.75

sensitive area

y

±0.1

3.05

±0.2

3.1

14.0 min.

±0.05

1.5

0.3

sensitive area

y

±0.1

2.6

top view

0.40.4

0.36

branded side

±0.04

SPGS7001-7-A3/2E

0.06

Fig. 3–1:

Plastic Small Outline Transistor Package

(SOT-89A)

Weight approximately 0.04 g Dimensions in mm

Note: The SOT-89A package will be discontinued in 2000 and be replaced by the SOT-89B package.

±0.1

4.55

x1 x2

0.125

0.3

±0.2

4

min.

0.25

±0.05

1.15

1.7 2

123

0.40.4

0.4

1.5

3.0

y

2.55

sensitive area

±0.1

top view

branded side

45°

SPGS7002-7-A/2E

0.8

Fig. 3–3:

Plastic Transistor Single Outline Package

(TO-92UA)

Weight approximately 0.12 g Dimensions in mm

Note: For all package diagrams, a mechanical tolerance of ±50 µm applies to all dimensions where no tolerance is explicitly given.

3.2. Dimensions of Sensitive Area

0.4 mm x 0.2 mm

3.3. Positions of Sensitive Areas

SOT-89A SOT-89B TO-92UA

|x2 – x1| / 2 < 0.2 mm

y = 0.98 mm ± 0.2 mm

y = 0.95 mm ± 0.2 mm

y = 1.0 mm ± 0.2 mm

branded side

SPGS0022-3-A3/2E

Fig. 3–2:

Plastic Small Outline Transistor Package

(SOT-89B)

Weight approximately 0.035 g Dimensions in mm

0.06

±0.04

5Micronas

HAL11x

3.4. Absolute Maximum Ratings

Symbol Parameter Pin No. Min. Max. Unit

V

DD

–V

P

–I

DD

I

DDZ, IOZ

V

O

I

O

I

Omax

T

S

T

J

1)

as long as TJmax is not exceeded

2)

with a 220 Ω series resistor at pin 1

3)

t<2 ms

Supply Voltage 1 –15 28 Test Voltage for Supply 1 –24 Reverse Supply Current 1 – 50 Current through Protection Devices 1 or 3 –200 Output Voltage 3 –0.3 28 Continuous Output On Current 3 – 30 Peak Output On Current 3 – 250 Storage Temperature Range –65 150 °C Junction Temperature Range –40 150 °C

2)

3)

1)

– V

1)

3)

200

1)

3)

V

mA mA V mA mA

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only . Functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.

3.5. Recommended Operating Conditions

Symbol Parameter Pin No. Min. Max. Unit

V

DD

I

O

V

O

Supply Voltage 1 4.5 24 V Continuous Output On Current 3 0 20 mA Output Voltage

3 0 24 V

(output switched off)

R

V

1)

see Fig. 5–1 on page 14

Series Resistor

1)

1 270 Ω

6 Micronas

HAL11x

3.6. Electrical Characteristics at TJ = –40 °C to +140 °C , VDD = 4.5 V to 24 V , as not otherwise specified in Conditions Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

I

DD

I

DD

V

OL

V

OL

I

OH

I

OH

t

en(O)

t

r

t

f

R

thJSB

case SOT-89A SOT-89B

Supply Current 1 6 8.2 11 mA Supply Current over

1 3.9 8.2 12 mA

TJ= 25 °C

T emperature Range Output Voltage over

3 – 120 400 mV IOL = 12.5 mA

T emperature Range Output Voltage over

3 – 190 500 mV IOL = 20 mA

T emperature Range Output Leakage Current 3 – 0.06 1 µA B < B

Output Leakage Current over

3 – – 10 µA B < B

Temperature Range Enable Time of Output after

Setting of V

DD

1 – 6 10 µs VDD = 12 V

,

off

T

= 25 °C, VOH = 0 to 24 V

J

,

off

V

= 0 to 24V

OH

B > B

+ 2 mT or

ON

B < B

OFF

– 2 mT

Output Rise Time 3 – 0.08 0.4 µs VDD = 12 V, RL = 820 Ohm,

C

= 20 pF

L

Output Fall Time 3 – 0.06 0.4 µs VDD = 12 V, RL = 820 Ohm,

C

= 20 pF

L

Thermal Resistance Junction to Substrate Backside

– – 150 200 K/W Fiberglass Substrate

30 mm x 10 mm x 1.5mm, pad size see Fig. 3–4

R

thJA

case

Thermal Resistance Junction to Soldering Point

TO-92UA

5.0

2.0

1.0

Fig. 3–4: Recommended pad size SOT-89x Dimensions in mm

– – 150 200 K/W

7Micronas

HAL11x

3.7. Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 4.5 V to 24 V, Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

Sensor Parameter On point B Switching type T

HAL114 –40 °C 7.5 21.5 36 4.3 17.4 33.2 2.8 4.1 5 mT

unipolar 25 °C 7 21.1 34 4 17.1 31.2 2.8 4 4.5 mT

HAL115 –40 °C –10.7 1.4 12.5 –12.5 –1.4 10.7 1.8 2.8 7 mT bipolar 25 °C –10.7 1.2 12.5 –12.5 –1.2 10.7 1.8 2.4 7 mT

J

140 °C 6.1 19.4 31.3 3.6 16.1 28.8 2.2 3.3 4 mT

140 °C –10.7 0.9 12.5 –12.5 –0.9 10.7 1 1.8 7 mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

ON

Off point B

OFF

Hysteresis B

HYS

Unit

Note: For detailed descriptions of the individual types, see pages 10 and following.

The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures.

Please use a sensor of the HAL5xx family if higher robustness against mechanical stress is required.

mA

15

T

10

I

DD

5

0

–5

–10

–15

–15 –10 –5 0 5 1015202530

A

T

A

T

A

Fig. 3–5: Typical supply current versus supply voltage

HAL11x

= –40 °C

= 25 °C = 140 °C

V

DD

mA

12

10

I

DD

8

6

4

2

0

V

0123456

T

= –40 °C

A

T

= 25 °C

A

T

= 140 °C

A

V

DD

HAL11x

V

Fig. 3–6: Typical supply current versus supply voltage

8 Micronas

HAL11x

mA

12

10

I

DD

V

= 4.5 V

DD

8

6

4

2

0

VDD = 24 V

–50 0 50 100 150

Fig. 3–7: Typical supply current versus temperature

HAL11x

T

A

°C

mV

500

V

400

OL

300

I

= 20 mA

O

200

100

0

–50 0 50 100 150

VDD = 12 V

IO = 12.5 mA

T

A

Fig. 3–9: Typical output low voltage versus temperature

HAL11x

°C

mV

500

IO = 12.5 mA

V

400

OL

300

T

= 140 °C

A

200

T

= 25 °C

A

100

T

= –40 °C

A

0

0 5 10 15 20 25 30

V

DD

Fig. 3–8: Typical output low voltage versus supply voltage

HAL11x

µA

2

10

1

10

I

OH

0

10

–1

10

–2

10

–3

10

–4

10

V

–50 0 50 100 150

HAL11x

VOH = 24 V VDD = 5 V

T

A

°C

Fig. 3–10: T ypical output leakage current versus temperature

9Micronas

HAL114

4. Type Description

4.1. HAL114

The HAL114 is a unipolar switching sensor (see Fig. 4–1).

The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side.

For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package.

Magnetic Features:

– switching type: unipolar – typical B – typical B

: 21.1 mT at room temperature

ON

: 17.1 mT at room temperature

OFF

– operates with static magnetic fields and dynamic mag-

netic fields up to 20 kHz

Applications

The HAL114 is the optimal sensor for applications with one magnetic polarity such as:

– solid state switches, – contactless solution to replace micro switches, – position and end-point detection, and – rotating speed measurement.

Output Voltage

V

O

B

HYS

V

OL

0B

OFF

B

ON

B

Fig. 4–1: Definition of magnetic switching points for the HAL114

Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 4.5 V to 24 V, Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point B

T

J

–40 °C 7.5 21.5 36 4.3 17.4 33.2 2.8 4.1 5 mT

25 °C 7 21.1 34 4 17.1 31.2 2.8 4 4.5 mT 100 °C 6.3 19.9 31.5 3.6 16.4 28.9 2.6 3.5 4 mT 140 °C 6.1 19.4 31.3 3.6 16.1 28.8 2.2 3.3 4 mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

ON

The hysteresis is the difference between the switching points B

Off point B

HYS

OFF

= BON – B

OFF

Hysteresis B

HYS

Unit

The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures.

Please use a sensor of the HAL 5xx family if a robustness against mechanical stress is required.

10 Micronas

HAL114

mT

30

B

ON

B

OFF

25

20

15

T

= –40 °C

10

A

T

= 25 °C

A

T

= 140 °C

A

5

0

0 5 10 15 20 25 30

V

DD

Fig. 4–2: T ypical magnetic switching points versus supply voltage

HAL114

mT

30

B

ON

25

B

OFF

B

ON

V

DD

HAL114

= 12 V

20

B

15

OFF

10

5

0

V

–50 0 50 100 150

T

A

°C

Fig. 4–4: Typical magnetic switching points versus temperature

mT

30

B

ON

B

OFF

25

20

15

T

= –40 °C

10

A

T

= 25 °C

A

T

= 140 °C

A

5

0

3456

V

DD

Fig. 4–3: Typical magnetic switching points versus supply voltage

HAL114

V

11Micronas

HAL115

4.2. HAL115

The HAL1 15 is a bipolar switching sensor (see Fig. 4–5). The output turns low with the magnetic south pole on the

branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not.

For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package.

Magnetic Features:

– switching type: bipolar – high sensitivity – typical B – typical B

: 1.2 mT at room temperature

ON

: –1.2 mT at room temperature

OFF

– operates with static magnetic fields and dynamic mag-

netic fields up to 20 kHz

Applications

The HAL 115 is the optimal sensor for all applications with alternating magnetic signals at the sensor position such as:

– rotating speed measurement, – commutation of brushless DC-motors and cooling

fans.

Output Voltage

V

O

B

HYS

V

OL

0B

OFF

B

ON

B

Fig. 4–5:Definition of magnetic switching points for the HAL115

Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 4.5 V to 24 V, Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter On point B

T

J

–40 °C –10.7 1.4 12.5 –12.5 –1.4 10.7 1.8 2.8 7 mT

25 °C –10.7 1.2 12.5 –12.5 –1.2 10.7 1.8 2.4 7 mT 100 °C –10.7 1 12.5 –12.5 –1 10.7 1.5 2 7 mT 140 °C –10.7 0.9 12.5 –12.5 –0.9 10.7 1 1.8 7 mT

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

ON

The hysteresis is the difference between the switching points B

Off point B

HYS

OFF

= BON – B

OFF

Hysteresis B

HYS

Unit

The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures.

Please use a sensor of the HAL5xx family if higher robustness against mechanical stress is required.

12 Micronas

HAL115

mT

6

B

ON,

4

B

OFF

2

0

–2

–4

–6

–50 0 50 100 150

B

ON

OFF

HAL115

VDD = 12 V

T

A

Fig. 4–6:Typical magnetic switching points versus ambient temperature

°C

13Micronas

HAL11x

5. Application Notes

5.1. Application Circuit

The HAL1 1x sensors can operate without external components. For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–1).

The series resistor and the capacitor should be placed as closely as possible to the sensor.

R

V

220 Ω

R

1V

DD

V

DD

4.7 nF

2

GND

OUT

3

L

Fig. 5–1: Recommended application circuit

5.2. Ambient Temperature

Due to the internal power dissipation, the temperature on the silicon chip (junction temperature T

) is higher

J

than the temperature outside the package (ambient temperature T

).

A

TJ = TA + ∆T At static conditions, the following equation is valid:

∆T = I

* VDD * R

DD

th

For typical values, use the typical parameters. For worst case calculation, use the max. parameters for I

DD

and

Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range T

specified. The maximum ambient temperature T

is

J

Amax

can be calculated as: T

Amax

= T

Jmax

– ∆T

5.3. Extended Operating Conditions

All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 6).

V

DD

L

2

1

HAL115

2

3.3 k R

3

L

1

R

2

3.3 k

2.2 µ/50 V 2.2 µ C

1

Fig. 5–2: Recommended application circuit for DC fans

/50 V

C

2

Please use the sensors of the HAL 5xx family if lower operation voltage, lower current consumption or tighter magnetic specifications required.

5.4. Start-up Behavior

The sensors have an initialization time (enable time t

) after applying the supply voltage. This parameter

en(O)

t

is specified in the Electrical Characteristics (see

en(O)

page 7). During the initialization time, the output state is not de-

fined and can toggle. After t

, the output will be low

en(O)

if the applied magnetic field B is above BON or high if B is below B

For magnetic fields between B

OFF

.

and BON, the output

OFF

state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above B respectively, below B

OFFmin

.

ONmax

,

14 Micronas

HAL11x

15Micronas

HAL11x

6. Data Sheet History

1. Final data sheet: “HAL114 Unipolar Hall Switch IC”, June 10, 1998, 6251-456-1DS. First release of the final data sheet.

2. Final data sheet: “HAL115 Hall Effect Sensor IC”, May 7, 1997, 6251-414-1DS. First release of the final data sheet.

3. Final data sheet: “HAL114, HAL115 Hall Effect Sensor Family, Dec. 20, 1999, 6251-456-2DS. Second release of the final data sheet. Major changes:

– additional package SOT-89B – temperature range “A” replaced by “K” for HAL114 – additional temperature range “K” for HAL115 – outline dimensions for SOT-89A and TO-92UA

changed

– supply voltage range changed for HAL115

Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com

Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (12/1999) Order No. 6251-456-2DS

All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability . Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.

16 Micronas

HAL 11x, HAL 5xx, HAL 62x

Data Sheet Supplement

Subject: Data Sheet Concerned:

Improvement of SOT-89B P ackage HAL 114, 115, 6251-456-2DS, Dec. 20, 1999

HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999 HAL 55x, 56x, 6251-425-1DS, April 6, 1999 HAL 621, 629, 6251-504-1DS, Feb. 3, 2000

Supplement: Edition:

Changes:

– position tolerance of the sensitive area reduced – tolerances of the outline dimensions reduced – thickness of the leadframe changed to 0.15 mm (old 0.125 mm) – SOT-89A will be discontinued in December 2000

sensitive area

∅0.2

y

0.15

0.3

4.55

1.7 2

No. 1/ 6251-531-1DSS July 4, 2000

±0.2

4

min.

0.25

1.15

SPGS0022-5-A3/2E

123

0.4

1.5

3.0

branded side

2.55

top view

0.40.4

±0.04

0.06

Position of sensitive area

HAL 114, 115

HAL 55x, HAL 56x HAL 50x, 51x HAL 621, 629

x center of the package center of the package y 0.95 mm nomi nal 0.85 mm nominal

Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is e xplicitly given.

Position tolerance of the sensitive area is defined in the package diagram.

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