Page 1
HAF2011(L),HAF2011(S)
Silicon N Channel MOS FET Series
Power Switching
Target specification
ADE-208-738 (Z)
1st. Edition
Jan. 1999
Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
D
S
G
Page 2
HAF2011(L),HAF2011(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
16 V
Gate to source voltage V
GSS
–2.5 V
Drain current I
D
40 A
Drain peak current I
D(pulse)
Note1
80 A
Body-drain diode reverse drain current I
DR
40 A
Channel dissipation Pch
Note2
50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Item Symbol Min Typ Max Unit Test Conditions
Input voltage V
IH
3.5 — — V
V
IL
— — 1.2 V
Input current I
IH1
— — 100 µA Vi = 8V, VDS = 0
(Gate non shut down) I
IH2
——50µA Vi = 3.5V, VDS = 0
I
IL
——1 µA Vi = 1.2V, VDS = 0
Input current I
IH(sd)1
— 0.8 — mA Vi = 8V, VDS = 0
(Gate non shut down) I
IH(sd)2
— 0.35 — mA Vi = 3.5V, VDS = 0
Shut down temperature T
sd
— 175 — °C Channel temperature
Gate operation voltage V
OP
3.5 — 12 V
Page 3
HAF2011(L),HAF2011(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain current I
D1
(25) — — A VGS = 3.5V, VDS = 2V
Drain current I
D2
— — 10 mA VGS = 1.2V, VDS = 2V
Drain to source breakdown
voltage
V
(BR)DSS
60——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
(16) — — V IG = (300µA), VDS = 0
Gate to source breakdown
voltage
V
(BR)GSS
(–2.5) — — V IG = (–100µA), VDS = 0
Gate to source leak current I
GSS1
— — 100 µAV
GS
= 8V, VDS = 0
I
GSS2
——50µAV
GS
= 3.5V, VDS = 0
I
GSS3
——1 µAV
GS
= 1.2V, VDS = 0
I
GSS4
— — –100 µAV
GS
= –2.4V, VDS = 0
Input current (shut down) I
GS(op)1
— 0.8 — mA VGS = 8V, VDS = 0
I
GS(op)2
— 0.35 — mA VGS = 3.5V, VDS = 0
Zero gate voltege drain
current
I
DSS
— — 250 µAV
DS
= 50 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.25 V ID = 1mA, VDS = 10V
Static drain to source on state
resistance
R
DS(on)
—2533mΩ ID = 20A, VGS = 4V
Note3
Static drain to source on state
resistance
R
DS(on)
—1520mΩ ID = 20A, VGS = 10V
Note3
Forward transfer admittance |yfs|2550—SI
D
= 20A, VDS = 10V
Note3
Output capacitance Coss — 940 — pF V
D
S
= 10V , VGS = 0
f = 1 MHz
Turn-on delay time t
d(on)
— (7.8) — µsI
D
= 5A, VGS = 5V
Rise time t
r
— (64) — µsR
L
= 6Ω
Turn-off delay time t
d(off)
— (19) — µs
Fall time t
f
— (30) — µs
Body–drain diode forward
voltage
V
DF
— (0.85) — V IF = 40A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
— ( ) — ns IF = 40A, VGS = 0
diF/ dt =50A/µs
Over load shut down t
os1
— ( ) — ms VGS = 5V, VDD = 12V
operation time
Note4
t
os2
— ( ) — ms VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the time shiff based on increasing of chennel temperature when operete under over load
condition.
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HAF2011(L),HAF2011(S)
4
Main Characteristics
80
60
40
20
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Page 5
HAF2011(L),HAF2011(S)
5
Package Dimensions
Unit: mm
10.2 ± 0.3
(1.4)
8.6 ± 0.3
1.27 ± 0.2
1.2 ± 0.2
2.54 ± 0.5
11.3 ± 0.5
(1.5)
0.86
+0.2
–0.1
3.0
+0.3
–0.5
0.76 ± 0.1
10.0
+0.3
–0.5
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
10.2 ± 0.3
(1.4)
8.6 ± 0.3
1.27 ± 0.2
2.54 ± 0.5
(1.5)
0.86
+0.2
–0.1
10.0
+0.3
–0.5
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.2
2.59 ± 0.2
0.4 ± 0.1
1.2 ± 0.2
(1.5)
0.1
+0.2
–0.1
L type S type
Hitachi Code
EIAJ
JEDEC
LDPAK
—
—
Page 6
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