Page 1
HAF2007(L), HAF2007(S)
Silicon N Channel MOS FET Series
Power Switching
Target specification
ADE-208-706 (Z)
1st. Edition
Dec. 1998
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
D
S
G
2, 4
1
3
Page 2
HAF2007(L), HAF2007(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
(16) V
Gate to source voltage V
GSS
(–2.5) V
Drain current I
D
5A
Drain peak current I
D(pulse)
Note1
10 A
Body-drain diode reverse drain current I
DR
5A
Channel dissipation Pch
Note2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Item Symbol Min Typ Max Unit Test Conditions
Input voltage V
IH
3.5 — — V
V
IL
— — 1.2 V
Input current I
IH1
— — 100 µA Vi = 8V, VDS = 0
(Gate non shut down) I
IH2
——50µA Vi = 3.5V, VDS = 0
I
IL
——1 µA Vi = 1.2V, VDS = 0
Input current I
IH(sd)1
— 0.8 — mA Vi = 8V, VDS = 0
(Gate non shut down) I
IH(sd)2
— 0.35 — mA Vi = 3.5V, VDS = 0
Shut down temperature T
sd
— 175 — °C Channel temperature
Gate operation voltage V
op
3.5 — 12 V
Page 3
HAF2007(L), HAF2007(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain current I
D1
(5) — — A VGS = 3.5V, VDS = 2V
Drain current I
D2
——10mAV
GS
= 1.2V, VDS = 2V
Drain to source breakdown voltage V
(BR)DSS
60——V I
D
= 10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
(16) — — V IG = (300µA), VDS = 0
Gate to source breakdown voltage V
(BR)GSS
(–2.5) — — V IG = (–100µA), VDS = 0
Gate to source leak current I
GSS1
— — 100 µAVGS = 8V, VDS = 0
I
GSS2
——50µAVGS = 3.5V, VDS = 0
I
GSS3
——1 µAVGS = 1.2V, VDS = 0
I
GSS4
— — –100 µAVGS = –2.4V, VDS = 0
Input current (shut down) I
GS(op)1
— 0.8 — mA VGS = 8V, VDS = 0
I
GS(op)2
— 0.35 — mA VGS = 3.5V, VDS = 0
Zero gate voltege drain current I
DSS
——10µAVDS = 60 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.25 V ID = 1mA, VDS = 10V
Static drain to source on state
resistance
R
DS(on)
— 100 160 mΩ ID = 2.5A, VGS = 4V
Note3
Static drain to source on state
resistance
R
DS(on)
— 70 100 mΩ ID = 2.5A, VGS = 10V
Note3
Forward transfer admittance |yfs| (5) (18) — S ID = 2.5A, VDS = 10V
Note3
Output capacitance Coss — (260) — pF VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time t
d(on)
— ( ) — µsI
D
= 2.5A, VGS = 5V
Rise time t
r
— ( ) — µsR
L
= 12Ω
Turn-off delay time t
d(off)
— ( ) — µs
Fall time t
f
— ( ) — µs
Body–drain diode forward voltage V
DF
— (1.0) — V IF = 2.5A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
— ( ) — ns IF = 5A, VGS = 0
diF/ dt =50A/µs
Over load shut down t
os1
— ( ) — ms VGS = 5V, VDD = 12V
operation time
Note4
t
os2
— ( ) — ms VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the time shift based on increasing of chennel temperature when operete under over load
condition.
Page 4
HAF2007(L), HAF2007(S)
4
Main Characteristics
40
30
20
10
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Page 5
HAF2007(L), HAF2007(S)
5
Package Dimensions
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.3 ± 0.2
0.55 ± 0.1
2.29 ± 0.5
0.55 ± 0.1 1.2 ± 0.3
1.7 ± 0.5
5.5 ± 0.53.1 ± 0.5
16.2 ± 0.5
2.29 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.3 ± 0.2
0.55 ± 0.1
1.7 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
0.55 ± 0.1
0 ~ 0.25
0.8 ± 0.1
type
L
S
type
4.7 ± 0.5
Hitachi
EIAJ ( L type)
EIAJ ( S type)
JEDEC
DPAK–2
SC–63
SC–64
—
Page 6
HAF2007(L), HAF2007(S)
6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
2000 Sierra Point Parkway
Brisbane, CA 94005-1897
Tel: <1> (800) 285-1601
Fax: <1> (303) 297-0447
For further information write to:
Loading...