Page 1
HAF2005
Silicon N Channel MOS FET Series
Power Switching
ADE-208-688 (Z)
Target specification 1st. Edition
Nov. 1998
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
TO–220FM
G
Tempe–
rature
Sencing
Circuit
Gate resistor
Latch
Circuit
Gate
Shut–
down
Circuit
D
1
2
3
S
1. Gate
2. Drain
3. Source
Page 2
HAF2005
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Item Symbol Min Typ Max Unit Test Conditions
Input voltage V
Input current I
(Gate non shut down) I
Input current I
(Gate non shut down) I
Shut down temperature T
Gate operation voltage V
V
IH1
IH2
I
IL
IH(sd)1
IH(sd)2
IH
IL
sd
op
3.5 — — V
— — 1.2 V
— — 100 µA Vi = 8V, VDS = 0
——50µA Vi = 3.5V, VDS = 0
——1 µA Vi = 1.2V, VDS = 0
— 0.8 — mA Vi = 8V, VDS = 0
— 0.35 — mA Vi = 3.5V, VDS = 0
— 175 — °C Channel temperature
3.5 — 12 V
60 V
(16) V
(–2.5) V
40 A
80 A
40 A
30 W
2
Page 3
HAF2005
S
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain current I
Drain current I
Drain to source breakdown
D1
D2
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Input current (shut down) I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state
GSS1
I
GSS2
I
GSS3
I
GSS4
GS(op)1
I
GS(op)2
DSS
GS(off)
R
DS(on)
resistance
Static drain to source on state
R
DS(on)
resistance
Forward transfer admittance |yfs|2550—S I
Output capacitance Coss — 940 — pF V
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body–drain diode reverse
t
rr
recovery time
Over load shut down t
operation time
Note4
os1
t
os2
Note: 3. Pulse test
4. Include the time shiff based on increasing of chennel temperature when operete under over load
condition.
(25) — — A VGS = 3.5V, VDS = 2V
——10mAV
60——V I
= 1.2V, VDS = 2V
GS
= 10mA, VGS = 0
D
(16) — — V IG = (300µA), VDS = 0
(–2.5) — — V IG = (–100µA), VDS = 0
— — 100 µAVGS = 8V, VDS = 0
——50µAVGS = 3.5V, VDS = 0
——1 µAVGS = 1.2V, VDS = 0
— — –100 µAVGS = –2.4V, VDS = 0
— 0.8 — mA VGS = 8V, VDS = 0
— 0.35 — mA VGS = 3.5V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0
1.0 — 2.25 V ID = 1mA, VDS = 10V
—2533mΩ ID = 20A, VGS = 4V
—1520mΩ ID = 20A, VGS = 10V
= 20A, VDS = 10V
D
= 10V , VGS = 0
D
f = 1 MHz
— (7.8) — µsI
— (64) — µsR
= 20A, VGS = 5V
D
= 1.5Ω
L
— (19) — µs
— (30) — µs
— (0.85) — V IF = 20A, VGS = 0
— ( ) — ns IF = 20A, VGS = 0
diF/ dt =50A/µs
— ( ) — ms VGS = 5V, VDD = 12V
— ( ) — ms VGS = 5V, VDD = 24V
Note3
Note3
Note3
3
Page 4
HAF2005
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
4
Page 5
Package Dimensions
HAF2005
Unit: mm
1.2 ± 0.2
1.4 ± 0.2
0.7 ± 0.1
2.54 ± 0.5
10.0 ± 0.3
7.0 ± 0.3
φ
3.2 ± 0.2
12.0 ± 0.3
2.0 ± 0.3
5.0 ± 0.3
2.54 ± 0.5
4.45 ± 0.3
2.7
0.6
2.8 ± 0.2
2.5 ± 0.2
17.0 ± 0.3
14.0 ± 1.0
0.5 ± 0.1
Hitachi Code
EIAJ Code
JEDEC Code
TO–220FM
SC–72
—
5
Page 6
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