Datasheet HAF2001 Datasheet (HIT)

HAF2001

Silicon N Channel MOS FET Series

Power Switching

ADE-208-353 D (Z)

5th. Edition

October 1997

Features

This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
operation to shut–down the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.

• Logic level operation (4 to 6 V Gate drive)

• High endurance capability against to the short circuit

• Built–in the over temperature shut–down circuit

• Latch type shut–down operation (Need 0 voltage recovery)

Outline

TO–220AB

G

Tempe–
rature
Sencing
Circuit

Gate resistor

Latch
Circuit

Gate
Shut–
down
Circuit

D

S

4

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

HAF2001

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25°C

Typical Operation Characteristics

60 V
16 V
–2.8 V
20 A
40 A
20 A
50 W

Item Symbol Min Typ Max Unit Test Conditions

Input voltage V

Input current I
(Gate non shut down) I

Input current I
(Gate shut down) I
Shut down temperature T
Gate operation voltage V

V

IH1

IH2

I

IL

IH(sd)1

IH(sd)2

IH

IL

sd

OP

3.5 — — V
— — 1.2 V
— — 100 µA Vi = 8V, VDS = 0
——50µA Vi = 3.5V, VDS = 0
——1 µA Vi = 1.2V, VDS = 0
— 0.8 — mA Vi = 8V, VDS = 0
— 0.35 — mA Vi = 3.5V, VDS = 0
— 175 — °C Channel temperature

3.5 — 13 V

2

HAF2001

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain current I
Drain current I
Drain to source breakdown

D1

D2

V

(BR)DSS

10——A V
— — 10 mA VGS = 1.2V, VDS = 2V
60——V I

voltage
Gate to source breakdown

V

(BR)GSS

16——V I

voltage
Gate to source breakdown

V

(BR)GSS

–2.8 — — V IG = –100µA, VDS = 0

voltage
Gate to source leak current I

Input current (shut down) I

Zero gate voltege drain

GSS1

I

GSS2

I

GSS3

I

GSS4

GS(op)1

I

GS(op)2

I

DSS

— — 100 µAV
——50µAV
——1 µAV
— — –100 µAV
— 0.8 — mA VGS = 8V, VDS = 0
— 0.35 — mA VGS = 3.5V, VDS = 0
— — 250 µAV

current
Gate to source cutoff voltage V
Static drain to source on state

R

GS(off)

DS(on)

1.0 — 2.25 V ID = 1mA, VDS = 10V
—5065mΩI

resistance
Static drain to source on state

R

DS(on)

—3043mΩI

resistance
Forward transfer admittance |yfs| 6 12 — S ID = 10A, VDS = 10V
Output capacitance Coss — 630 — pF VDS = 10V , VGS = 0

Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward

V

d(on)

r

d(off)

f

DF

— 7.5 — µsI
—29—µsR
—34—µs
—26—µs
— 1.0 — V IF = 20A, VGS = 0

voltage
Body–drain diode reverse

t

rr

— 110 — ns IF = 20A, VGS = 0

recovery time
Over load shut down t
operation time

Note4

os1

t

os2

— 1.8 — ms VGS = 5V, VDD = 12V
— 0.7 — ms VGS = 5V, VDD = 24V

Note: 3. Pulse test

4. Include the time shift based on increasing of channel temperature when operate under over load
condition.

= 3.5V, VDS = 2V

GS

= 10mA, VGS = 0

D

= 100µA, VDS = 0

G

= 8V, VDS = 0

GS

= 3.5V, VDS = 0

GS

= 1.2V, VDS = 0

GS

= –2.4V, VDS = 0

GS

= 50 V, VGS = 0

DS

= 10A, VGS = 4V

D

= 10A, VGS = 10V

D

f = 1 MHz

= 5A, VGS = 5V

D

= 6Ω

L

diF/ dt =50A/µs

Note3

Note3

Note3

3

HAF2001

Main Characteristics

Power vs. Temperature Derating

80

60

40

20

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

50

10 V

40

D

8 V

6 V

30

20

Pulse Test

5 V

4 V

3.5 V

500
200

Maximum Safe Operation Area

Thermal shut down
Operation area

100

50

D

20

DC Operation (Tc = 25 °C)

1 ms

PW = 10 ms

10

5

Operation in this area

2

Drain Current I (A)

is limited by R

1

Ta = 25 °C

0.5

0.3

0.5 1 2 5 10 20 50 100

DS(on)

Drain to Source Voltage V (V)

Typical Transfer Characteristics

50

V = 10 V

DS

Pulse Test

40

D

30

Tc = –25 °C

25 °C

75 °C

20

20 µs

100 µs

DS

Drain Current I (A)

10

0

4

V = 3 V

GS

246810

Drain to Source Voltage V (V)

DS

Drain Current I (A)

10

0 12345

Gate to Source Voltage V (V)

GS

HAF2001

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.0

1.6

DS(on)

V (V)

Pulse Test

1.2

I = 20 A

0.8

0.4

Drain to Source Saturation Voltage

D

10 A

5 A

0246810

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

vs. Temperature

0.10

0.08

0.06

0.04

0.02

Pulse Test

V = 4 V

GS

V = 10 V

GS

I = 20 A

D

5 A, 10 A

10 A

I = 20 A

D

W

DS(on)

R ( )

5 A

Static Drain to Source State Resistance

vs. Drain Current

0.5

W

Pulse Test

0.2

DS(on)

R ( )

0.1
V = 4 V

0.05

0.02

Drain to Source On State Resistance

0.01

GS

V = 10 V

GS

1 2 5 10 20 50 100 200

Drain Current I (A)

D

Forward Transfer Admittance vs.

100

Drain Current

V = 10 V

50

20

Tc = –25 °C

Pulse Test

10

5

75 °C

2

DS

25 °C

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

Forward Transfer Admittance |yfs| (S)

1

0.5 1 2 5 10 20 50
Drain Current I (A)

D

5

HAF2001

1000

500

200

100

Body–Drain Diode Reverse

Recovery Time

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

100

50

20

10

Switching Characteristics

t

d(off)

t

f

t

r

t

d(on)

50

20

Reverse Recovery Time trr (ns)

10

0.5 1 2 5 10 20 50
Reverse Drain Current I (A)

Reverse Drain Current vs.

Souece to Drain Voltage

50

Pulse Test

40

DR

30

20

V = 5 V

GS

0 V

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

DR

SD

5

Switching Time t (µs)

2

V = 5 V, V = 30 V

GS DD

PW = 300 µs, duty < 1 %

1

0.1 0.2

0.512 5102050
Drain Current I (A)

Typical Capacitance vs.
Drain to Source Voltage

10000

1000

100

Capacitance Coss (pF)

V = 0

GS

f = 1 MHz

10

0

10 20 30 40 50

Drain to Source Voltage V (V)

D

Coss

DS

6

HAF2001

Gate to Source Voltage vs.

Shutdown Time of Load–Short Test

10

V = 36 V

GS

8

6

DD

24 V

12 V

9 V

4

2

Gate to Source Voltage V (V)

0

0.1 0.2 0.5 1 2 5 10 20 50 100

Shutdown Time of Load–Short Test

Pw (mS)

TTL Drive Characteristics

10

I = 5 A

D

8

I

6

1.0

0.8

0.6

Shutdown Case Temperature vs.

Gate to Source Voltage

200

I = 5 A

180

160

140

120

100

Shutdown Case Temperature Tc (°C)

0

246810

Gate to Source Voltage V (V)

Test Circuit

I

I

Rg

HD74LS08

V

I

V

CC

= 5 V

+
–

D

GS

R

L

D•U•T

I

V

I

4

Input Voltage V (V)

2

I

I

0

0.01 0.03 0.1 0.3 1 3 10
Gate Series Resistance R (k )

G

W

0.4
0

Input Current I (mA)

0.2
0

0

0

I

D

V

I

I

I

5 A

Thermal shut down

7

HAF2001

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

g

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.02

0.03

Normalized Transient Thermal Impedance

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

Tc = 25°C

q g q

ch – c(t) = s (t) • ch – c

q

ch – c = 2.50 °C/W, Tc = 25 °C

P

DM

PW

T

D =

100 m 1 10

PW

T

Switching Time Test Circuit Waveform

R

L

V
= 30 V

Vout
Monitor

DD

V

GS

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

V Monitor

GS

V

GS

5 V

50W

D.U.T.

8

Package Dimensions

HAF2001

Unit: mm

2.79 ±0.2

1.27

18.5 ±0.57.8 ±0.5

1.2±0.1

2.54 ±0.5

10.16±0.2

9.5

8.0

1.27±0.1

1.5 max

0.76 ±0.1

2.54 ±0.5

f 3.6

+ 0.2

– 0.1

6.4

+ 0.1
– 0.08

15.0 ±0.3

0.5±0.1

14.0 ±0.5

2.7 max

4.44±0.2

1.26±0.15

Hitachi Code

EIAJ

JEDEC

TO–220AB

SC–46

—

9

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