Page 1
HAF1001
Silicon P Channel MOS FET Series
Power Switching / Over Temperature Shut–down Capability
ADE-208-583 A (Z)
2nd Edition
October 1997
Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
operation to shut–down the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
• Logic level operation (–4 to –6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
TO–220AB
G
Tempe–
rature
Sencing
Circuit
Gate resistor
Latch
Circuit
Gate
Shut–
down
Circuit
D
S
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Page 2
HAF1001
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS+
GSS–
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Typical Operation Characteristics
Item Symbol Min Typ Max Unit Test Conditions
Input voltage V
Input current I
(Gate non shut down) I
Input current I
(Gate shut down) I
Shut down temperature T
Gate operation voltage V
V
IH1
IH2
I
IL
IH(sd)1
IH(sd)2
sd
IH
IL
OP
–3.5 — — V
— — –1.2 V
— — –100 µA Vi = –8V, VDS = 0
— — –50 µA Vi = –3.5V, VDS = 0
——–1µA Vi = –1.2V, VDS = 0
— –0.8 — mA Vi = –8V, VDS = 0
— –0.35 — mA Vi = –3.5V, VDS = 0
— 175 — °C Channel temperature
–3.5 — –13 V
–60 V
–16 V
3V
–15 A
–30 A
–15 A
50 W
2
Page 3
HAF1001
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain current I
Drain current I
Drain to source breakdown
D1
D2
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS+
voltage
Gate to source breakdown
V
(BR)GSS–
voltage
Gate to source leak current I
Input current (shut down) I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state
GSS+1
I
GSS+2
I
GSS+3
I
GSS–
GS(op)1
I
GS(op)1
DSS
GS(off)
R
DS(on)
resistance
Static drain to source on state
R
DS(on)
resistance
Forward transfer admittance |yfs|5 10—S I
Output capacitance Coss — 610 — pF VDS = –10V , VGS = 0
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body–drain diode reverse
t
rr
recovery time
Over load shut down t
operation time
Note4
os1
t
os2
Note: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
–7 — — A VGS = –3.5V, VDS = –2V
— — –10 mA VGS = –1.2V, VDS = –2V
–60 — — V ID = –10mA, VGS = 0
–16 — — V IG = –100µA, VDS = 0
3——VI
— — –100 µAV
— — –50 µAV
——–1µAV
— — 100 µAV
= 100µA, VDS = 0
G
= –8V, VDS = 0
GS
= –3.5V, VDS = 0
GS
= –1.2V, VDS = 0
GS
= 2.4V, VDS = 0
GS
— –0.8 — mA VGS = –8V, VDS = 0
— –0.35 — mA VGS = –3.5V, VDS = 0
— — –250 µAV
= –50 V, VGS = 0
DS
–1.1 — –2.25 V ID = –1mA, VDS = –10V
— 100 130 mΩ ID = –7.5A, VGS = –4V
—7090mΩ ID = –7.5A
= –10V
V
GS
= –7.5A, VDS = –10V
D
Note3
f = 1 MHz
— 7.5 — µsI
—36—µsR
= –7.5A, VGS = –5V
D
= 4Ω
L
—32—µs
—29—µs
— –1.0 — V IF = –15A, VGS = 0
— 200 — ns IF = –15A, VGS = 0
diF/ dt =50A/µs
— 3.7 — ms VGS = –5V, VDD = –12V
—1 —msV
= –5V, VDD = –24V
GS
Note3
Note3
3
Page 4
HAF1001
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
–50
–10 V
–40
D
–8 V
–30
–6 V
–5 V
–500
–200
–100
D
–50
Maximum Safe Operation Area
Thermal shut down
Operation area
–20
–10
DC Operation (Tc = 25 °C)
–5
–2
Drain Current I (A)
Operation in this area
is limited by R
–1
–0.5
Ta = 25 °C
–0.3
–0.5 –1 –2 –5 –10 –20 –50 –100
DS(on)
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–20
–16
Tc = –25 °C
D
–12
25 °C
100 µs
1 ms
PW = 10 ms
DS
20 µs
75 °C
–20
Drain Current I (A)
–10
0
Drain to Source Voltage V (V)
4
–4 V
–3.5 V
V = –3 V
GS
Pulse Test
–2 –4 –6 –8 10
DS
–8
–4
Drain Current I (A)
V = –10 V
DS
Pulse Test
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
Page 5
HAF1001
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
–1.6
DS(on)
V (V)
Pulse Test
–1.2
I = –10 A
–0.8
D
–0.4
Drain to Source Saturation Voltage
0 –2 –4 –6 –8 –10
Gate to Source Voltage V (V)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Ω
I = –10 A
D
0.16
DS(on)
R ( )
0.12
V = –4 V
GS
–10 A
0.08
0.04
–10 V
–2, –5 A
Pulse Test
0
Static Drain to Source on State Resistance
–40 0 40 80 120 160
Case Temperature Tc (°C)
–5 A
–2 A
GS
–5 A
–2 A
Static Drain to Source State Resistance
vs. Drain Current
0.5
Pulse Test
Ω
0.2
DS(on)
R ( )
0.1
0.05
V = –4 V
GS
–10 V
0.02
Drain to Source On State Resistance
0.01
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Drain Current I (A)
D
Forward Transfer Admittance vs.
50
20
10
5
2
Drain Current
Tc = –25 °C
75 °C
V = –10 V
DS
Pulse Test
25 °C
1
Forward Transfer Admittance |yfs| (S)
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I (A)
D
–50
5
Page 6
HAF1001
500
200
100
Body–Drain Diode Reverse
Recovery Time
100
50
20
10
Switching Characteristics
t
d(off)
t
f
t
r
t
d(on)
50
20
di / dt = 50 A / µs
V = 0, Ta = 25 °C
Reverse Recovery Time trr (ns)
GS
10
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Reverse Drain Current I (A)
Reverse Drain Current vs.
Souece to Drain Voltage
–20
Pulse Test
–16
DR
–12
V = –5 V
GS
–8
0 V
DR
–50
5
2
Switching Time t (µs)
1
V = –5 V, V = –30 V
GS DD
PW = 300 µs, duty < 1 %
0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Drain Current I (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
1000
–50
D
–4
Reverse Drain Current I (A)
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V (V)
6
SD
Capacitance Coss (pF)
V = 0
GS
f = 1 MHz
100
0 –10 –20 –30 –40 –50
Drain to Source Voltage V (V)
DS
Page 7
HAF1001
Gate to Source Voltage vs.
Shutdown Time of Load–Short Test
–12
–10
GS
V = –36 V
–8
–6
DD
–24 V
–12 V
–9 V
–4
–2
Gate to Source Voltage V (V)
0
0.0001 1
0.001 0.01 0.1
Shutdown Time of Load–Short Test
Pw (S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
s (t)
γ
1
D = 1
0.5
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
100
Shutdown Case Temperature Tc (°C)
0
–2 –4 –6 –8 –10
Gate to Source Voltage V (V)
I = –5 A
D
GS
Tc = 25°C
0.3
0.2
0.1
0.1
0.05
0.02
0.03
Normalized Transient Thermal Impedance
0.01
1shot pulse
0.01
10 µ
100 µ 1 m 10 m
Pulse Width PW (S)
θ γ θ
ch – c(t) = s (t) • ch – c
θ
ch – c = 2.50 °C/W, Tc = 25 °C
P
DM
PW
T
D =
100 m 1 10
PW
T
7
Page 8
HAF1001
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vin
–5 V
50Ω
Vout
Monitor
R
L
V
DD
= –30 V
Vin
Vout
td(on)
10%
10%
Waveform
90%
tr
td(off)
90%
90%
10%
t
f
8
Page 9
Package Dimensions
HAF1001
Unit: mm
1.27
3.0max18.5 ±0.57.8 ±0.5
11.5 max
9.8 max
7.6 min
f
1.5 max
0.76 ±0.1
2.5 ±0.5
5.1 ±0.5
+ 0.1
3.6
– 0.08
6.3 min
15.3 max
12.7 min
2.7 max
4.8 max
0.5
1.5 max
Hitachi Code
EIAJ
JEDEC
TO–220AB
SC–46
—
9
Page 10
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Loading...