Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data
Issued Date : 2000.10.01
Revised Date : 2000.10.01
Page No. : 1/3
HAD826SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HAD826SP is designed for general purpose amplifier and high speed, medium - power switching
applications.
Features
Low Collector Saturation Voltage
•
High Speed Switching
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature....................................................................................................... -55 ~ +150 °C
Junction Temperature................................................................................................. 150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)........................................................................................... 500 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage..................................................................................................... 75 V
VCEO Collector to Emitter Voltage................................................................................................. 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 6 V
IC Collector Current .................................................................................................................. 500 mA
(Ta=25°C)
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 75 - - V IC=10uA, IE=0
BVCEO 40 - - V IC=10mA, IB=0
BVEBO 6 - - V I E= 10uA, IC=0
ICBO - - 10 nA VCB=60V, IE=0
ICEX - - 10 nA VCB=60V, VEB(OFF)=3V
IEBO - - 50 nA VEB=3V, IC=0
*VCE(sat)1 - - 300 mv IC=150mA, IB=15mA
*VCE(sat)2 - - 1 V IC=500mA, IB=50mA
*VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA
*VBE(sat)2 - - 2 V IC=500m A, IB=50mA
*hFE1 35 - - VCE=10V, IC=100uA
*hFE2 50 - - VCE=10V, IC=1mA
*hFE3 75 - - VCE=10V, IC=10mA
*hFE4 100 - 300 VCE=10V, IC=150mA
*hFE5 40 - - VCE=10V, IC=500mA
*hFE6 50 - - VCE=1V, IC=150mA
fT 300 - - MHz VCE=20V, IC=20mA, f =100MHz
Cob - - 8 pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specific at i on
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. :Preliminary Data
Issued Date : 2000.10.01
Revised Date : 2000.10.01
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000
Current Gain & Collector Current
VCE=10V
VCE=1V
Collec tor Curre nt (m A)
Capacit ance & Reverse-Biased Voltage
100
10000
1000
100
Saturation Voltage (mV)
10
Saturation Voltage & Collector Current
BE(sat)
V
CE(sat)
V
0.1 1 10 100 1000
Collec tor Curre nt (mA)
@ IC=10I
@ IC=10I
B
B
Cutoff Frequency & Collector Current
1000
100
fT
10
Capac itance (pF)
1
0.1 1 10 100 1000
Cob
Reverse Biased Vol tage (V)
10
Cutoff Frequency (MHz)
1
1 10 100 1000
Collec tor Curre nt (m A)
HSMC Product Specific at i on
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92SP Dimension
Spec. No. :Preliminary Data
Issued Date : 2000.10.01
Revised Date : 2000.10.01
Page No. : 3/3
Style : Pin 1.Emitter 2.Collector 3.Base
E
F
3
A
2
D
1
G
DIM
B
C
3-Lead TO-92SP Plastic Package, HSMC Package Code : N
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1450 0.1650 3.70 4.20 E 0.0160 0.0240 0.41 0.61
B 0.1063 0.1300 2.70 3.30 F - *0.0150 - *0.38
C 0.5000 - 12.7 - G 0.0800 0.1050 2.03 2.67
D - *0.1000 - *2.54
Notes :
Material :
• Lead : 42 Alloy ; solder plati ng
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension : millimeters.
3.Maximum lead thicknes s includes lead finish thickness, and minimum lead thickness i s the minimum thickness of base m aterial.
4.If there is any question with packing specification or packing method, please contac t your local HSMC sales office.
*:Typical
Important Notice:
• All rights are reserved. Reproduc tion in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to m ake changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or applic ation assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelect ronics Corp.) : 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hs i n-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Indus trial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specific at i on
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