Datasheet HA17558PS, HA17558FP, HA17558F, HA17558 Datasheet (HIT)

HA17558 Serise

Dual Operational Amplifier

Description

HA17558 is dual operational amplifiers which provides internal frequency compensation and high performance. It can be applied widely to measuring control equipment and to general Use. The two amplifiers share a common bias network and power supply leads.

Features

• High voltage Gain: 104dB (Typ)

• High speed: 1V/µs

• Continuous short-circuit protection

• Low-noise operational amplifiers

• Internal frequency compensation

Ordering Information

Type No. Application Package

HA17558FP Industrial use FP-8D HA17558F Commercial use FP-8D HA17558 Commercial use DP-8 HA17558PS Industrial use DP-8

HA17558 Serise

Pin Arrangement

Circuit Schematic (1/2)

Vin(+)

Vin(–)

Vout1

Vin(–)1

Vin(+)1

V

EE

1

2

3

4

1

–+

(Top View)

2

+–

8

7

6

5

V

CC

Vout2

Vin(–)2

Vin(+)2

V

CC

out

V

to V

CC

V

EE

2

HA17558 Serise

Absolute Maximum Ratings (Ta = 25°C)

Ratings HA17558 HA17558PSHA17558FHA17558

Item Symbol

Supply voltage V

Differential input voltage V

V

CC

EE

IN (diff)

Common-mode input voltage VCM* Power dissipation P

T

3

+18 +18 +18 +18 V –18 –18 –18 –18 V

±30 ±30 ±30 ±30 V ±15 ±15 ±15 ±15 V

670*

Operating temperature Topr –20 to

+75

Storage temperature Tstg –55 to

+125

1

670* –20 to

+75 –55 to

+125

1

385*

2

–20 to +75

–55 to +125

FP

385* –20 to

+75 –55 to

+125

2

Notes: 1. These are the allowable values up to Ta = 45 °C. Derate by 8.3mW/°C above that temperature.

2. These are the allowable values up to Ta = 31 °C mounting on 30% wiring density glass epoxy board. Derate by 7.14mW/°C above that temperature.

3. If the supply voltage is less than ±15V, input voltage should be less than supply voltage.

Unit

mW –20 to

+75 °C

Electrical Characteristics (Ta = 25°C, VCC = +15V, VEE = –15V)

Item Symbol Min Typ Max Unit Test conditions

Input offset voltage V Input offset current I Input bias current I Voltage gain A

IO

IB

VD

Maximum output voltage Vop-p ±12 ±14 — V RL ≥ 10kΩ Maximum output voltage Vop-p ±10 ±12.4 — V RL ≥ 2kΩ Common mode input voltage

V

CM

range Common mode rejection ratio CMR 70 100 — dB RS ≤ 10kΩ Supply voltage rejection ratio PSRR — 10 150 µV/V RS ≤ 10kΩ Power dissipation Pd — 90 170 mW 2-channel, No load Slew rate SR — 1.0 — V/µsAVD = 1 Equivalent input noise voltage V

NI

Channel separation CS — 105 — dB f = 1kHz

— 0.5 6 mV RS ≤ 10kΩ — 5 200 nA — 50 500 nA 86 104 — dB RL ≥ 2kΩ, VO = ±10V

±12 ±14 — V

—6 —µVp-p RS = 1kΩ, f = 1HZ to 1kH

Z

3

HA17558 Serise

Characteristic Curves

Open Loop Voltage Gain vs. Frequency

120

(dB)

100

V(OL)

VCC = 15 V V

EE

R

= 2 kΩ

L

80

60

40

20

0

Open Loop Voltage Gain A

1 10 100 1 k 10 k 100 k 1 M 10 M

Frequency f (Hz)

Power Supply Rejection Ratio

vs. Ambient Temperature

120

VCC = 15 V V

110

EE

100

= –15 V

Maximum Output Voltage vs. Frequency

36

(V)

32

OP-P

28

VCC = 15 V V R

24 20 16 12

8 4 0

Maximum Output Voltage V

100

1 k 10 k 100 k 1 M

Frequency f (Hz)

Voltage Gain vs. Ambient Temperature

130

120

(dB)

VD

110

= –15 V

EE

= 2 kΩ

L

VCC = 15 V

= –15 V

V

EE

90

80

70

Power Supply Rejection Ratio PSRR (dB)

–20

0 20406080

Ambient Temperature Ta (°C)

4

100

Voltage Gain A

90

80

–20

Ambient Temperature Ta (°C)

0 20406080

Power Supply Rejection Ratio vs. Frequency

HA17558 Serise

120

100

80

60

40

20

Power Supply Rejection Ratio PSRR (dB)

0

100

300 1 k 3 k 10 k 30 k 100 k 300 k 1 M

Frequency f (Hz)

Common-mode Rejection Ratio vs. Frequency

120

100

80

VCC = 15 V V

= –15 V

EE

VCC = 15 V V

= –15 V

EE

Ta = 25°C R

= ∞

L

60

40

20

Common–mode Rejection Ratio CMR (dB)

0

100

300 1 k 3 k 10 k 30 k 100 k 300 k

Frequency f (Hz)

1 M

5

HA17558 Serise

Transient Response

(V)

O

10

5

V

= 15 V

CC

V

= –15 V

EE

0

–5

Output Voltage V

–10

010203040

Time t (µs)

Power Dissipation vs. Ambient Temperature

100

VCC = 15 V VEE = –15 V

90

RL = ∞

80

70

Maximum Output Voltage

vs. Ambient Temperature

40

)

P-P

(V

OP-P

32

VCC = 15 V VEE = –15 V RL = 2 kΩ

24

16

8

Maximum Output Voltage V

0

–20 0 20 40

60

Ambient Temperature Ta (°C)

Maximum Output Voltage vs. Load Resistance

)

30

P-P

(V

25

OP-P

VCC = 15 V

20

VEE = –15 V f = 1 kHz

15

80

60

Power Dissipation Pd (mW)

50

–200 20406080

Ambient Temperature Ta (°C)

6

10

Maximum Output Voltage V

5

100 200 500 1 k 2 k 5 k 10 k

Load Resistance R

(Ω)

L

HA17558 Serise

Supply Current vs. Supply Voltage

5

RL = ∞

4

(mA)

CC

3

2

Supply Current I

1

0

±4 ±6 ±9 ±12 ±15 ±18

Supply Voltage VCC, V

EE

(V)

Input Bias Current vs. Ambient Temperature

100

VCC = 15 V

= –15 V

V

80

(nA)

IB

EE

60

40

20

Input Bias Current I

0

–20 0 20 40 60

Ambient Temperature Ta (°C)

80

Common-mode Input Voltage vs.

Supply Voltage

20

(V)

CM

10

0

–10

Common-mode Input Voltage V

–20

±4 ±8 ±12 ±16 ±18

Supply Voltage V

, VEE (V)

CC

Slew Rate vs. Supply Voltage

1.2

1.0

0.8

0.6

Slew Rate SR (V/µs)

0.4

f = 1 kHz R

L

C

L

Ta = 25°C A

V

±4 ±6 ±9 ±12 ±18

Supply Voltage V

, VEE (V)

CC

= 2 kΩ = 100 pF

= 1

±15

7

HA17558 Serise

Input Offset Current vs. Ambient Temperature

40

20

(nA)

IO

0

VCC = 15 V V

= –15 V

EE

Input Offset Voltage vs. Supply Voltage

4

(mV)

IO

2

–20

–40

Input Offset Current I

–20

02040 80

Ambient Temperature Ta (°C)

Voltage Gain vs. Supply Voltage

120

100

(dB)

VD

80

60

Voltage Gain A

40

–4 –6 –9 –12 –15

Supply Voltage V

, VEE (V)

CC

60

f = 10 Hz

= 2 kΩ

R

L

–18

0

–2

Input Offset Voltage V

–4

–4 –6 –9 –12 –15

–18

Supply Voltage VCC, VEE (V)

Slew Rate vs. Ambient Temperature

1.4 VCC = 15 V V

= –15 V

1.2

1.0

EE

R

= 2 kΩ

L

= 100 pF

C

L

A

= 1

V

0.8

Slew Rate SR (V/µs)

0.6

0.4

–200 20406080

Ambient Temperature Ta (°C)

8

Output Short Current vs. Ambient Temperature

60

50

(mA)

OS

40

VCC = 15 V V

= –15 V

EE

Sink

HA17558 Serise

100

√

30

(nV/ Hz)

NI

10

30

Source

20

Output Short Current I

10

–200 20406080

Ambient Temperature Ta (°C)

Input Noise Voltage vs. Frequency

RS = 100 Ω

3

Input Noise Voltage V

1

10 30 100 300 1 k

Frequency f (Hz)

3 k 10 k

9

HA17558 Serise

Input Offset Voltage vs. Ambient Temperature

4

(mA)

IO

2

0

–2

Input Offset Voltage V

–4

–200 20406080

Ambient Temperature Ta (°C)

VCC = 15 V V

= –15 V

EE

Common-mode Rejection Ratio

140

120

100

80

60

40

Common-mode Rejection Ratio CMR (dB)

–20 0 20 40 60 80

vs. Ambient Temperature

VCC = 15 V V

= –15 V

EE

Ambient Temperature Ta (°C)

10

Circuit Example

HA17558 Serise

33 µF

2.2 kΩInput

56 kΩ

T.H.D. vs. Output Voltage (RIAA Pre-Amp)

1.0

0.3

RIAA Pre-amplifier

0.0022 µF 0.01 µF

36 kΩ 390 kΩ

–

HA17558

+

47 µF

– 1 kΩ

–15 V

60

50

+15 V

+

100 µF

–

33 µF

–

100 µF

+

T.H.D. vs. Output Voltage (RIAA Pre–Amp)

Otuput

10 kΩ

VCC = 15 V

V

= –15 V

EE

0.1

0.03

T.H.D (%)

0.01

0.003

0.001

0.01 0.03 0.1 0.3 31.0 10 Output Voltage (Vrms)

20 kHz

10 kHz

1 kHz

20 kHz

40

(dB)

VD

30

20

Voltage Gain A

10

0

10 30 100 300 1 k 3 k 10 k 30 k 100 k

Frequency f (Vrms)

11

HA17558 Serise

Package Dimensions

0.89

10.6 Max

1

Unit: mm

9.6

58

6.3

7.4 Max

4

1.3

2.54 ± 0.25

1.27 Max

8

1

1.27

0.48 ± 0.10

4.85

5.25 Max

0.75 Max

5

4

5.06 Max

0.1 Min

2.54 Min

4.4

2.03 Max

0° – 15°

Hitachi Code JEDEC EIAJ Mass

6.50

0.20 ± 0.04

*0.22 ± 0.05

0.60

7.62

0.25

(reference value)

+ 0.25 – 0.15

1.05

0° – 8°

+ 0.25 – 0.18

+ 0.10 – 0.05

DP-8 Conforms Conforms

0.54 g

Unit: mm

*0.42 ± 0.08

*Dimension including the plating thickness

Base material dimension

12

0.40 ± 0.06

0.10 ± 0.10

0.12

0.15

M

Hitachi Code JEDEC EIAJ

(reference value)

Mass

FP-8D — Conforms

0.10 g

HA17558 Serise

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223

Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH Electronic components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533

Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX

13