Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/5
H603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description
This very high density process has been especially tailored to minimize onstate resistance and provide superior switching performance. These
devices are particularly suited for low voltage applications such as DC/DC
converters and other battery powered circuits where fast switching, low inline power loss, and resistance to transients are needed.
(Ta=25°C)
Absolute Maximum Ratings
Maximum Temperatures
•
Operating and Storage Temperature................................................................................ -65 ~ +175 °C
Maximum Power Dissipation
•
Total Power Dissipation at Tc=25°C ............................................................................................... 60 W
Derate Above 25°C................................................................................................................ 0.4 W / °C
Maximum Voltages and Currents
•
Drain-Source Voltage...................................................................................................................... 30 V
Gate-Source Voltage -Continuous................................................................................................ ± 20 V
Drain Current -Continuous.............................................................................................................. 30 A
Drain Current -Pulsed................................................................................................................... 100 A
Thermal Resistance, Junction-to-Case .................................................................................. 2.5 °C / W
Thermal Resistance, Junction-to-Ambient............................................................................ 62.5 °C / W
Electrical Characteristics
Off Characteristics
•
Symbol Parameter Condition Min Typ Max Unit
BV
DSS
I
DSS
+I
GSS
-I
GSS
On Characteristics
•
V
GS(TH)
RDS(on) Static Drain-Source On-Resistance
IDS(on) On-State Drain Current
g
FS
Dynamic Characteristic
•
C
iss
C
oss
C
rss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Zero Gate Voltage Drain Current VDS=30V, VGS=0V - - 10 uA
Gate-Body Leakage, Forward VGS=20V, VDS=0V - - 100 nA
Gate-Body Leakage, Reverse VGS=-20V, VDS=0V - - -100 nA
Gate Threshol d Vo ltage
V
DS=VGS
V
DS=VGS
, ID=250uA 1.1 - 3
, ID=10mA 1.4 - 3
VGS=10V, ID=25A - 0.018 0.022
V
=4.5V, ID=10A - 0.029 0.040
GS
VGS=10V, VDS=10V 60 - -
=4.5V, VDS=10V 15 - -
V
GS
Forward Transconductance VDS=10V, ID=25A - 26 - S
Input Capacitance - 1100 - pF
Output Capacitance - 600 - pF
Reverse Transfer Capacitance
V
=15V, VGS=0V
DS
f=1.0Mhz
- 180 - pF
V
Ω
A
HSMC Product Specification
Page 2
HI-SINCERITY
V
MICROELECTRONICS CORP.
Switching Characteristics
•
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 2/5
Symbol Parameter Condition Min Typ Max Unit
T(on)
T(off)
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics And Maximum Ratings
•
V
SD
Turn-On Delay Time - - 30 ns
V
Turn -On Rise Time - - 110 ns
Turn-Off Delay Time - - 150 ns
Turn -Off Fa ll Time
Total Gate Charge - - 45 nC
Gate-Source Charge - - 10 nC
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage VGS=0V, IS=25A
=15V, ID=25A
DS
=10V, R
V
GS
=10V, ID=25A,
V
DS
=10V
V
GS
GEN
=24
Ω
- - 130 ns
- - 10 nC
--25A
--1.3V
Characteristics Curve
100
VGS=10V
80
60
40
Drain-Source Current (A)
20
0
012345
8V
6V7V
Drain-Source Voltage (V)
5V
4.5V
4V
3V
On Resistance Variation & Temperature
1.6
1.5
On-Region C ha racteristic
1.4
1.3
1.2
1.1
1.0
0.9
Norm alize d Drain-Source O n-R esistan ce
ID=25A
VGS=10V
On-Resistance Variation With Gate Voltage &
3.0
2.5
2.0
Resistance
1.5
Norma liz e d Drain-So urce On-
1.0
0.5
0 20406080
Drai n Cur rent
VGS= 4V
4.5V
5 V
6V
7V
8V
10
Drain Curre nt (A)
On-Resistance Variation & Drain Current &
2.5
VGS=10V
2
1.5
Resistance
1
Norma liz e d Drain-So urce On-
Temperature
TJ=125°C
TJ=25°C
0.8
25 50 75 100 125 150
Junction Temperature (°C)
0.5
020406080
Drain Curre nt (A)
HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 3/5
Drain Current Variation & G ate Voltage &
Temperature
50
TJ= 25°C
40
TJ=125°C
30
20
Drain Curre nt (A)
10
0
0123456
Gate -Source Voltage (V)
Gate Threshold Variation & Temperature
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
Gate -Source Thr es hold Voltage ( V)
0.9
0.8
25 50 75 100 125 150
Junction Temperature (°C)
ID= 250uA
ID=10mA
ID=1mA
Sub- Threshold Dr ain Current Va riati on & Gate
Volta g e & Te m p era tu re
0.06
0.05
0.04
0.03
0.02
Drain Curre nt (A)
0.01
0
0.5 1.0 1.5 2.0 2.5
TJ=125°C
Gate -Source Voltage (V)
TJ=25°C
Capacitance Characteristics
2000
1500
Ciss
1000
Capac itance (pF)
500
0
0 5 10 15 20 25 30
Drain-Source Voltage (V)
Coss
Crss
Brea kdow n Voltage Vari ation & Temperature
1.1
1.08
1.06
1.04
Voltage
1.02
1
Norm alize d Drain-Source Brea kdown
0.98
25 50 75 100 125 150
Junction Temperature (°C)
Body Di ode Forward Voltage Variati on &
Curren t & Temperature
100
TJ=125°C
10
1
Reverse Drain Curren t (A)
0.1
0.2 0.4 0.6 0.8 1 1.2
Body Diode Forward Vol t a ge ( V)
TJ= 25°C
HSMC Product Specification
Page 4
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 4/5
Transductance Variation & Drain Current &
Temperature
30
TJ=25°C
25
20
15
10
Transconductance (S)
5
0
01020304050
Drain Curre nt (A)
1
0.5
0.2
TJ=125°C
Tra nci ent Therm al Response Curve
100
Max i mum Sa fe Operati ng Ar ea
Rds(on) Line
10
Drain-Source Current (A)
VGS=20V
Single Pulse
TC=25°C
1
0.1 1 10 100
Drain-Source Voltage (V)
1ms
10ms
100ms
1us
Dc
0.1
0.1
0.05
Resistance
0.02
0.01
Norm alize d Ef f ec t ive Trans ient T hermal
0.01
0.1 1 10 100 1000
Time (ms)
RθJC(t) = r(t) * RθJC(t)
RθJC =2.5 °C / W
P(pk)
t1
t2
TJ-TC=P* RθJC(t)
Duty Cycle,D=t1/t2
HSMC Product Specification
Page 5
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A B
D
H
I
G
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 5/5
Marking :
E
M
C
K
HSMC Logo
Part Number
Date Code
Product Series
Rank
Style : Pin 1.Gate 2.Drain 3.Source
3
2
N
4
1
O
DIM
Min. Max. Min. Max.
DIM
P
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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