Datasheet H2N7002 Datasheet (HSMC)

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/4

H2N7002

N-CHANNEL TRANSISTOR

Description

N-channel enhancement-mode MOS transistor.

SOT-23

Absolute Maximum Ratings

Drain-Source Voltage............................................................................................................. 60 V

Drain-Gate Voltage (RGS=1MΩ) ........................................................................................... 60 V

Gate-Source Voltage ........................................................................................................ +/-40 V

Continuous Drain Current (Ta=25°C)(1)........................................................................... 200 mA

Continuous Drain Current (Ta=100°C)(1)......................................................................... 115 mA

Pulsed Drain Current (Ta=25°C)(2)................................................................................... 800 mA

Total Power Dissipation (Tc=25°C) .................................................................................. 200 mW

Derate above 25°C................................................................................................... 0.16 Mw / °C

Storage Temperatur e............................................................................................... -55 to 150 °C

Operating Junction Temperature............................................................................. -55 to 150 °C

Lead Temperature, for 10 second Soldering...................................................................... 260 °C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient ................................................................... 625 °C / W

Characteristics

Parameter Symbol Test Conditions Min Typ. Max Unit

Drain-Source Breakdown Voltage BVDSS VGS=0, ID=10uA 60 - - V
Gate Threshold Voltage VGS(th) VDS=2.5V, ID=0.25mA 1 - 2.5 V
Gate Source Leakage Current, Forward IGSS/F VGS=+20V, VDS=0 - - 100 nA
Gate Source leakage Current, Reverse IGSS/R VGS=-20V, VDS=0 - - 100 nA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0 - - 1 uA
On-State Drain Current ID(ON) VDS>2VDS(ON), VGS=10V 500 - - mA

Static Drain-Source On-State Voltage VDS(ON)

Static Drain-Source On-State Resistance RDS(ON)
Forward Transconductance

Input Capacitance Ciss - - 50 pF
Output Capacitance Coss - - 25 pF
Reverse Transfer Capacitance Crss

(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width≤300us, Duty cycle≥2%.

(Ta=25°C)

G

ID=50mA, VGS=5V - - 0.375 V
ID=500mA, VGS=10V - - 3.75 V
ID=50mA, VGS=5V - - 7.5
ID=500mA, VGS=10V - - 7.5

VDS>2VDS(ON), ID=200mA 80 - - mS

FS

VDS=25V, VGS=0, f=1MHz

--5pF

Ω
Ω

H2N7002 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 2/4

1

0.9

0.8
VGS=10V

0.7

0.6

0.5

ID(A)

0.4

0.3

0.2

0.1

0

0246810

Output Characteristics

9V

8V

7V

6V

5V

4V
3V

VDS(V)

Typical Transconductance

0.5

0.45
VDS=7V

0.4

0.35

0.3

0.25

gFS(S)

0.2

0.15

0.1

0.05

0

0 0.2 0.4 0.6 0.8 1

ID(A)

Tj=-55ºC
Tj=25ºC

Tj=150ºC

0.8

0.7
VDS=10V

0.6

0.5

0.4

ID(A)

0.3

0.2

0.1

0

024681012

Tr ansfer Characterist ics

TJ=-55ºC Tj=25ºC

Tj=150ºC

VGS(V)

On-resistance versus Drain Current

10

VGS=4V VGS=6V

8

6

4

RDS(on)

2

0

0 0.2 0.4 0.6 0.8 1

ID(A)

VGS=8V

VGS=10V

70

60
50
40

C(pF)

30
20
10

0

0 1020304050

1.2

1.1

1

0.9

BVDSS(V)

0.8

0.7

0.6

-50 0 50 100 150

Breakdow n Volt age Variation Wit h T em per a t ure

VGS=0
ID=0.25mA

Capacitance

Ciss

Coss
Crss

VDS(V)

Tj Junction Temperature

2.5

2

)

Ω

1.5

1

On - Resistance Variat ion With Temperat ure

VGS=10V
ID=0.5A

RDS(on) (m

0.5

0

-50 0 50 100 150

0.8

0.7

0.6

0.5

0.4

Is(mA)

0.3

0.2

0.1

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Tj Junction Temperature

Source-Drain Diode Forward Voltage

Tj=150ºC Tj=25ºC

VSD(V)

Tj=-55ºC

H2N7002 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 3/4

10

1

100us

0.1

Id (A)

0.01

0.001
110100

Vds (V)

1ms

10ms

100m

DC

s

Thermal Res ponse

1

0.5

0.2

Safe Oper a t ing Area

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

PD ,Power Dissipation (W)

0.2

0.1

0

0 25 50 75 100 125 150 175

Power Derating

T,EMPERATURE

0.1

0.1

(normalized)

r(t) ,Transient Thermal Resistance

0.01

0.1 1 10 100 1000

0.05

0.02

0.01

singl e pluse

t ,Time(ms)

H2N7002 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

SOT-23 Dimension

Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 4/4

A

L

7 0

3

B

S

21

GV

Control Code

3-Lead SOT-23 Plastic

Surface Mounted Package

HSMC Package Code: N

2

C

Style: Pin 1.Gate 2.Source 3.Drain

*: Typical

Min. Max. Min. Max.

DIM

D

H

Inches Millimeters Inches Millimeters

Min. Max. Min. Max.

JK

DIM

A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75

G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65

H 0.0005 0.0040 0.013 0.10

Marking:

Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.

Material:

• Lead: 42 Alloy; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

2.Controlling dimension: millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: [phone] Fax: [phone]

• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: [phone]~5 Fax: [phone]

H2N7002 HSMC Product Specification