Datasheet H2N7000 Datasheet (HSMC)

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 1/4

H2N7000

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Description

The H2N7000 is designed for high voltage, high speed applications
such as switching regulators, converters, solenoid and relay drivers.

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature................................................................................... +150 °C Maximum

Maximum Power Dissipation

•

Total Power Dissipation (Ta=25°C)............................................................................... 400 mW

Maximum Voltages and Currents (Ta=25°C)

•

BVDSS Drain to Source Voltage......................................................................................... 60 V

BVGSS Gate to Source Voltage ......................................................................................... 40 V

ID Drain Current............................................................................................................. 200 mA

Characteristics

Symbol Min. Ma x. Unit Test Co nditions

VDSS 60 - V ID=10uA, VGS=0

IDSS - 1 uA VDS=48V

IGSS

±

VGS(th) 0.8 3 V VDS=3V, ID=1mA

ID(on) 75 - mA VGS=4.5V, VDS=10V

RDS(on) - 5
VDSS(on)1 - 2.5 V VGS=10V, ID=0.5A
VDSS(on)2 - 0.4 v VGS=4.5V, ID=75mA

(Ta=25°C)

-

10

±

nA

Ω

VGS=±15V

VGS=10V, ID=0.5A

H2N7000 HSMC Product Specification

HI-SINCERITY

V

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 2/4

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

ID Drain-Source Current (A)

0.4

0.2

0.0
0246810

VDS, Drain- Source Voltage ( V)

VGS=10V

8V

7V

6

5V

4V

Transconductance Variation with Drain Current

On-Region Characterist ic

0.40

0.35

0.30

0.25

0.20

0.15

0.10

gFS, Tr ansconductanc e( S)

0.05

0.00

0.0 0.2 0.4 0.6 0.8 1.0

& Temperature

Tj=-55ºC

Tj=25ºC

Tj=150ºC

ID, Drain-Source Current (A)

Drain Current Variation with Gate Voltage

& Temperature

2.5
VDS=10V

2.0

1.5

1.0

ID Drain-Source Current (A)

0.5

0.0

0246810

VGS, G at e- Sour ce Voltage ( V)

Tj=-55ºC

Tj=25ºC

Tj=150ºC

Capacitance Characteristics

70

VGS=10V
f=1MHz

60

50

40

30

Capac itance (pF)

20

10

0

01020304050

VDS, Drain- Source Voltage ( V)

Ciss

Coss

Crss

On Resistance Variation with Temperature

2.5

ID=0.5A
VGS=10V

2.0

1.5

1.0

0.5

RDS(on ) , Normal ized On-Resistan c e

0.0

-50 0 50 100 150

Tj, Junction Temperature (ºC)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

IS, Source-Drain Current(A)

0.1

0.0

Body Di ode Forw ard Voltage Va riation

wi th C ur ren t & Temperature

Tj=150ºC

Tj=25ºC

Tj=-55ºC

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, Sour ce- Dr ain Volt age (V)

H2N7000 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 3/4

450

400

350

300

250

200

150

Power Dissipation-PD(mW)

100

50

0

0 50 100 150 200

Ambient Tem p er at ure-Ta(oC)

PD-Ta

H2N7000 HSMC Product Specification

HI-SINCERITY

g

MICROELECTRONICS CORP.

TO-92 Dimension

A

Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 4/4

α

2

Marking :

C

B

31

2

α

3

HSMC Logo

Part Number

Date Code

HSMC Logo

D

Part Number

H

α

I

1

G

Style : Pin 1.Source 2.Gate 3.Drain

Product Series

Rank

Laser Mark

Product Series

Ink Mark

E

DIM

F

Inches Millimeters Inches M illimeters

Min. Max. Min. Max.

3-Lead TO-92 Plastic Package

HSMC Packa

e Code : A

DIM

Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27

F 0.1323 0.1480 3.36 3.76

Notes :

Material :

• Lead : 42 Alloy ; solder plating

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0

1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.

2.Controlling dimension : millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.

1

α

2

α

3

α

-

-

-

*5
*2
*2

°
°
°

-

-

-

*:Typical

*5

°

*2

°

*2

°

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

•

HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.

Head Office And Factory :

•

Head Office

Tel : [phone] Fax : [phone]

•

Factory 1 :

Tel : [phone]~5 Fax : [phone]

H2N7000 HSMC Product Specification

(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Tai pei Taiwan R.O.C.

No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C