Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001.04.24
Page No. : 1/4
H2N6718L
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718L is designed for general purpose medium power
amplifier and switching applications.
Features
High Power: 850mW
•
High Current: 1A
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 850 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e...................................................................................... 100 V
VCEO Collector to Emitter Voltage ................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current (Continue)............................................................................................ 1 A
IC Collector Current (Pulse).................................................................................................. 2 A
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=100uA
BVCEO 100 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 100 nA VCB=80V
*VCE(sat) - - 350 mV IB=35mA, IC=350mA
*hFE1 80 - - VCE=1V, IC=50mA
*hFE2 50 - 300 VCE=1V, IC=250mA
*hFE3 20 - - VCE=1V, IC=500mA
fT 50 - - MHz VCE=10V, IC=50mA, f=100MHz
Cob - - 20 pF VCB=10V, IE=0, f=1MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank A B
Range 50-115 95-300
H2N6718L HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001.04.24
Page No. : 2/4
1000
100
hFE
10
0.1 1 10 100 1000 10000
Current Gain & Collector Current
hFE @ VCE=1V hFE @ VCE=2V
hFE @ VCE=5V hFE@VCE=10V
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000
1000
100
10
Saturation Voltage (mV)
1
Saturation Voltage & Collector Current
CE(sat)
V
0.1 1 10 100 1000 10000
Collector Current-IC (mA)
@ IC=10I
B
Collector Output Capacitance
100
1000
BE(sat)
V
Saturation Voltage (mV)
100
1 10 100 1000 10000
10
(A)
1
C
0.1
Collector Current-I
1mS 100mS 1S
0.01
1 10 100
Collector Current-IC (mA)
Safe Operating Area
Forwar d Voltage- VCE (V)
@ IC=10I
B
10
Capac itance ( p F )
1
0.1 1 10 100
Collector Base Voltage ( V)
Cob
Cut off Fr equen cy & Col lector Cu rrent
1000
fT @ VCE=10V
Cutoff Frequency (MHz)
100
1 10 100
Collector Current-IC (mA)
H2N6718L HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001.04.24
Page No. : 3/4
900
800
700
600
500
400
300
200
PD(mW), Power Dissipation
100
0
0 50 100 150 200
Power Derating
Ta(oC), Ambient Temperature
H2N6718L HSMC Product Specification
Page 4
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001.04.24
Page No. : 4/4
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Collector 3.Base
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
1
α
2
α
3
α
-
-
-
*5
*2
*2
°
°
°
-
-
-
*:Typical
*5
°
*2
°
*2
°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
H2N6718L HSMC Product Specification
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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