Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 1/3
H2N6520
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The H2N6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage
•
Low Collector-Emitter Saturation Voltage
•
The H2N6520 is complementary to H2N6517
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature....................................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage.................................................................................................. -350 V
VCEO Collector to Emitter Voltage ............................................................................................... -350 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -350 - - V IC=-100uA, IE=0
BVCEO -350 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -50 nA VCB=-250V, IE=0
IEBO - - -50 nA VEB=-4V, IC=0
*VCE(sat)1 - - -0.30 V IC=-10mA, IB=-1mA
*VCE(sat)2 - - -0.35 V IC=-20mA, IB=-2mA
*VCE(sat)3 - - -0.50 V IC=-30mA, IB=-3mA
*VCE(sat)4 - - -1 V IC=-50mA, IB=-5mA
VBE(on) - - 2 V IC=-100mA, VCE=-10V
*VBE(sat)1 - - -0.75 V IC=-10mA, IB=-1mA
*VBE(sat)2 - - -0.85 V IC=-20mA, IB=-2mA
*VBE(sat)3 - - -0.90 V IC=-30mA, IB=-3mA
*hFE1 20 - - VCE=-10V, IC=-1mA
*hFE2 30 - - VCE=-10V, IC=-10mA
*hFE3 30 - 200 VCE=-10V, IC=-30mA
*hFE4 20 - 200 VCE=-10V, IC=-50mA
*hFE5 15 - - VCE=-10V, IC=-100mA
fT 40 - 200 MHz IC=-10mA, VCE=-20V, f=20MHz
Cob - - 6 pF VCB=-20V, f=1MHz, IE=0
(Ta=25°C,
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
)
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 2/3
100
10
hFE
1
0.01 0.1 1 10 100 1000
Current Gain & Collector Current
VCE=10V
Collector Current (mA)
On Voltage & Collector CurrentT
10000
100000
10000
1000
BE(sat)
V
100
Saturation Voltage (mV)
10
1
0.001 0.01 0.1 1 10 100 1000
B
@ IC=10I
CE(sat)
V
Collector Current (mA)
@ IC=10I
B
Cut off Fr equency & Collector Cu rrent
100
VCE=20V
Saturation Volt age & Coll ector Current
1000
On Voltage (mV)
100
0.01 0.1 1 10 100 1000
Collector Current (mA)
BE(ON)
V
@ VCE=10V
Capacitance & Reverse-Biased Volt age
100
10
Capacitance (pF)
Cob
Cutoff Frequency
10
1 10 100
Collector Current (mA)
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
1
0.1 1 10 100
Reverse-Biased Vol t a ge (V)
0
0 20 40 60 80 100 120 140 160
Ambient Temper atur e- Ta(oC)
HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 3/3
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Base 3.Collec tor
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
F
DIM
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
1
α
2
α
3
α
Min. Max. Min. Max.
-
-
-
*5
*2
*2
°
°
°
-
-
-
*:Typical
*5
°
*2
°
*2
°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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