Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6232-B
Issued Date : 1998.01.09
Revised Date : 2000.09.15
Page No. : 1/3
H2N6426
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
BVCEO Collector to Emitter Voltage................................................................................... 40 V
BVCBO Collector to Base Voltage...................................................................................... 40 V
BVEBO Emitter to Base Voltage......................................................................................... 12 V
IC Collector Current....................................................................................................... 500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCEO 40 - - V IC=10mA, IB=0
BVCBO 40 - - V IC=100uA, IE=0
BVEBO 12 - - V IE=10uA, IC=0
ICEO - - 1.0 uA VEB=25V, IB=0
ICBO - - 50 nA VCB=30V, IE=0
IEBO - - 50 nA VEB=10V, IC=0
*VCE(sat)1 - 0.71 1.2 V IC=50mA, IB=0.5mA
*VCE(sat)2 - 0.9 1.5 V IC=500mA, IB=0.5mA
*VBE(sat) - 1.52 2.0 V IC=500mA, IB=0.5mA
VBE(on) - 1.24 1.75 V VCE=5V, IC=50mA
*hFE1 20 - 200 K VCE=5V, IC=10mA
*hFE2 30 - 300 K VCE=5V, IC=100mA
*hFE3 20 - 200 K VCE=5V, IC=500mA
Cob - 5.4 7.0 pF VCB=10V , f=1M H z
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6232-B
Issued Date : 1998.01.09
Revised Date : 2000.09.15
Page No. : 2/3
100k
10k
hFE
1k
1 10 100 1000
Current Gain & Collector Current
hFE @ VCE=5V
Collector Current (mA)
On Voltage & Collector Current
10000
10000
BE(sat)
V
@ IC=1000I
1000
Saturation Voltage (mV)
100
1 10 100 1000
CE(sat)
V
@ IC=1000I
CE(sat)
V
@ IC=100I
Collector Current (mA)
B
B
B
Capacit an ce & R everse-Biased Voltage
100
Saturation Volt age & Col lector C ur rent
BE(on)
V
@ VCE=5V
1000
On Voltage (mV)
100
1 10 100 1000
10000
1000
(mA)
C
Collector Current-I
PT=1ms
PT=100ms
PT=1s
100
10
Collector Current (mA)
Safe Operating Area
10
Capacitance (pF)
1
0.1 1 10 100
Cob
Reverse- Biased Vol tage (V)
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
1
1 10 100
Forwar d Voltage- VCE (V)
0
0 20 40 60 80 100 120 140 160
Ambient Tem p er at ure- Ta(oC)
HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6232-B
Issued Date : 1998.01.09
Revised Date : 2000.09.15
Page No. : 3/3
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Base 3.Collec tor
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
1
α
2
α
3
α
-
-
-
*5
*2
*2
°
°
°
-
-
-
*:Typical
*5
°
*2
°
*2
°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Tai pei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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