Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
H2N6388
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6388 is designed for general-purpose amplifier and
switching applications.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 65 W
Total Power Dissipation (Ta=25°C)...................................................................................... 2 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage...................................................................................... 80 V
BVCEO Collector to Emitter Voltage................................................................................... 80 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current............................................................................................................ 10 A
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=1mA, IE=0
*BVCEO 80 - - V IC=200mA, IB=0
ICBO - - 100 uA VCB=160V, IE=0
IEBO - - 5 mA VEB=5V, IC=0
ICEO - - 1 mA VCE=80V, IB=0
ICEV - - 300 uA VCE=80V, VBE(off)=1.5V
*VCE(sat)1 - - 2 V IC=5A, IB=10mA
*VCE(sat)2 - - 3 V IC=10A, IB=100mA
*VCE(sat)3 - 1.5 - V IC=5A, IB=2.5mA
*VBE(sat) - 2 - V IC=5A, IB=5mA
VBE(on)1 - - 2.8 V IC=5A, VCE=3V
VBE(on)2 - - 4.5 V IC=10A, VCE=3V
*hFE1 1 - 20 K IC=5A, VCE=3V
*hFE2 100 - - IC=10A, VCE=3V
VFEC - 3 - V IC=5A
Cob - - 200 pF VCB=10V, IE=0
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of
Rank hFE1 VCE(sat)1 VCE(sat)3 VBE(sat) VFEC
KC 2-20K <1.3V <1.5V <2.0V <3.0V
Normal 1-20K <2.0V - - -
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999.08.01
Page No. : 2/3
10000
1000
100
hFE
10
1
1 10 100 1000 10000
10000
Current Gain & Col lector Current
hFE @ VCE=3V
Collector Curren t ( mA)
On Vol t age & Coll ect or Current
10000
1000
Saturation Voltage (mV)
100
Saturation Voltage & Collect or Curr ent
BE(sat)
V
@ IC=100I
CE(sat)
V
@ IC=100I
100 1000 10000
Collector Current (mA)
B
B
Switching Time & Collector Current
10
VCC=30V, IC=250IB1=-250I
B2
Tstg
BE(on)
V
1000
On Voltage (mV)
100
10 100 1000 10000
1000
100
Capac tiance (pF)
Capacit ance & Reverse- Bia sed Voltage
Collector Curren t ( mA)
@ VCE=3V
Cob
1
Tf
Switchin g T imes ( us)
0.1
110
Ton
Collector Current (A)
Sa fe Opera ti ng Area
100000
10000
(mA)
C
1000
Collector Current-I
PT=1ms
PT=100ms
PT=1s
100
10
10
0.1 1 10 100
Reverse- Biased Vol tage (V)
1
1 10 100
Forwar d Voltage- VCE (V)
HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A B
D
H
I
G
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999.08.01
Page No. : 3/3
Marking :
E
M
C
K
HSMC Logo
Part Number
Date Code
Style : Pin 1.Base 2.Collector 3.Emitter
Product Series
Rank
3
2
N
4
1
P
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I -
O
DIM
Min. Max. Min. Max.
*
0.1508 B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N -
*
0.1000 E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 -
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*
16.25
*:Typical
*
3.83
*
2.54
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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