Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 1/4
H2N5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5551 is designed for amplifier transistor.
Features
• Complements to PNP Type H2N5401
• High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
TO-92
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 180 - - V IC=100uA, IE=0
BVCEO 160 - - V IC=1mA, IB=0
BVEBO 6 - - V IE=10uA, IC=0
ICBO - - 50 nA VCB=120V, IE=0
IEBO - - 50 nA VEB=4V, IC=0
*VCE(sat)1 - - 0.15 V IC=10mA, IB=1.0mA
*VCE(sat)2 - - 0.2 V IC=50mA, IB=5mA
*VBE(sat)1 - - 1 V IC=10mA, IB=1mA
*VBE(sat)2 - - 1 V IC=50mA, IB=5mA
*hFE1 80 - - VCE=5V, IC=1mA
*hFE2 80 160 400 VCE=5V, IC=10mA
*hFE3 50 - - VCE=5V, IC=50mA
fT 100 - 300 MHz VCE=10V, IC=10mA, f=100MHz
Cob - - 6 pF VCB=10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank A N C
Range 80-200 100-250 160-400
H2N5551 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 2/4
1000
125oC
100
hFE
10
1
25oC
75oC
hFE @ VCE=5V
1 10 100 1000
Collect o r Current- IC (mA)
Sat urati on Voltage & Coll ector Cu rrent
1000
25oC
Cur rent G ain & C o llector Current
100000
Sat uration Voltage & Collector Current
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
100
Capacita nce & Reverse-Biased Volta ge
B
@ IC=10I
125oC
Collect o r Current- IC (mA)
75oC
25oC
75oC
125oC
Saturation Voltage (mV)
100
0.1 1 10 100 1000
1000
100
Cutoff Fr equen cy ( M Hz)...
Collector Current- IC (mA)
Cut off Frequency & C ollector C urrent
BE(sat)
V
VCE=10V
@ IC=10I
10
Capacitance (pF)
B
1
0.1 1 10 100 1000
10000
1000
(mA)
C
100
10
Collect or Current-I
Cob
Reverse Biased Volt age (V)
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
10
1 10 100
Collector Curren t (m A )
1
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
H2N5551 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 3/4
700
600
500
400
300
200
Power Dissipation-PD (mW)
100
0
0 50 100 150 200
Ambient Temper a t ure-Ta (oC)
PD-Ta
H2N5551 HSMC Product Specification
Page 4
HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 4/4
A
α2
B
31
2
Marking:
HN
2
555
1
Date Code Control Code
Rank
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Base 3.Collector
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
*: Typical
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
α1
α2
α3
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H2N5551 HSMC Product Specification
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