HI-SINCERITY
MICROELECTRONICS CORP.
H2N5401
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5401 is designed for general purpose applications requiring
high breakdown voltages.
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 1/4
Features
• Complements to NPN Type H2N5551
• High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage...................................................................................... -160 V
VCEO Collector to Emitter Voltage................................................................................... -150 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -160 - - V IC=-100uA, IE=0
BVCEO -150 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -50 nA VCB=-120V, IE=0
IEBO - - -50 nA VEB=-3V. IC=0
*VCE(sat)1 - - -0.2 V IC=-10mA, IB=-1mA
*VCE(sat)2 - - -0.5 V IC=-50mA, IB=-5mA
*VBE(sat)1 - - -1 V IC=-10mA, IB=-1mA
*VBE(sat)2 - - -1 V IC=-50mA, IB=-5mA
*hFE1 50 - - VCE=-5V, IC=-1mA
*hFE2 80 160 400 VCE=-5V, IC=-10mA
*hFE3 50 - - VCE=-5V, IC=-50mA
fT 100 - 300 MHz VCE=-10V, IC=-10mA, f=100MHz
Cob - - 6 pF VCB=-10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank A N C
Range 80-200 100-240 160-400
H2N5401 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 2/4
1000
Current Gain & Coll ector Current
125oC
100
hFE
10
1
1000
25oC
75oC
hFE @ VCE=5V
1 10 100 1000
Collec tor Current-IC (mA)
Sat urati on Voltage & C ol lector C urrent
25oC
100000
Saturation Voltage & Col lector Current
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
100
Capacitance & Reverse- Biased Voltage
B
@ IC=10I
125oC
Collector Current-IC (mA)
75oC
25oC
75oC
125oC
BE(sat)
V
Saturat ion Volta ge ( m V)
100
0.1 1 10 100 1000
1000
100
Cutoff Fr equen cy ( M Hz)...
Collector Current-IC (mA)
Cutoff Frequency & IC
VCE=10V
@ IC=10I
10
Cob
B
Capacitance (pF)
1
0.1 1 10 100
10000
1000
(mA)
C
Collect o r Cur r e n t-I
PT=1s
100
10
Reverse Biased Vol t ag e ( V)
Safe Operating Area
PT=1ms
PT=100ms
10
1 10 100
Collector Curren t-IC (mA)
1
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
H2N5401 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 3/4
700
600
500
400
300
200
Power Dissipation-PD (mW)
100
0
0 50 100 150 200
Ambient Temperat ure-Ta (oC)
PD-Ta
H2N5401 HSMC Product Specification
HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 4/4
A
α2
B
31
2
Marking:
HN
2
450
1
Date Code Control Code
Rank
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Base 3.Collector
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
*: Typical
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
α1
α2
α3
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H2N5401 HSMC Product Specification
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