HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000.09.15
Page No. : 1/3
H2N5088
NPN EPITAXIAL PLANAR TRANSISTOR
Description
This device was designed for low noise, high gain , general purpose
amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 350 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 35 V
VCEO Collector to Emitter Voltage ..................................................................................... 30 V
VEBO Emitter to Base Voltage .......................................................................................... 4.5 V
IC Collector Current......................................................................................................... 50 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 35 - - V IC=100uA, IE=0
BVCEO 30 - - V IC=1mA, IB=0
BVEBO 4.5 - - V IE=10uA, IC=0
ICBO - - 50 nA VCB=20V, IE=0
IEBO - - 50 nA VEB=3V, IC=0
*VCE(sat) - - 0.5 V IC=10mA, IB=1mA
VBE(on) - - 0.8 V IC=10mA, IB=5V
*hFE1 300 - 900 VCE=5V, IC=0.1mA
*hFE2 350 - - VCE=5V, IC=1mA
*hFE3 300 - - VCE=5V, IC=10mA
fT 50 - - MHz VCE=5V, IC=0.5mA, f=100MHz
Cob - - 4.0 pF VCB=5V, f=1MHz, IE=0
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000.09.15
Page No. : 2/3
1000
hFE
100
0.1 1 10 100
Current Gain & Collector Current
hFE @ VCE=5V
Collector Current (mA)
On Voltage & Collector Current
1.0
BE(on)
V
@ VCE=5V
1.00
0.10
Saturation Voltage (V)
0.01
10
Sturation Voltage & Collector Current
BE(sat)
V
VCE(sat) @ IC=10I
0.1 1 10 100
Collector Current (mA)
@ IC=10I
B
B
Capacitance & Reverse-Biased Voltage
On Voltage (V)
0.1
0.01 0.1 1 10 100
1000
100
Cutoff Frequency (MHz)
Cut off Fr equency & Col lector Current
Collector Current (mA)
VCE=5V
1
Capac itance (pF)
0.1
0.1 1 10 100
10000
1000
(mA)
C
100
Collector Current-I
10
Cob
Reverse- Biased Vol t a ge (V)
Safe Operating Ar ea
PT=1ms
PT=100ms
PT=1s
10
1 10 100 1000
Collector Current (mA)
1
1 10 100
Forwar d Voltage- VCE (V)
HSMC Product Specification
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000.09.15
Page No. : 3/3
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Base 3.Collec tor
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches M illimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H C 0.5000 - 12.70 - I D 0.0142 0.0220 0.36 0.56
E-*0.0500 -
1.27
*
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
1
α
2
α
3
α
-
-
-
0.1000 -
*
0.0500 -
*
5
°
*
2
°
*
2
°
*
-
-
-
*:Typical
2.54
*
1.27
*
5
°
*
2
°
*
2
°
*
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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