Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
H2N4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4401 is designed for general purpose switching and amplifier
applications.
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 1/4
Features
• Complementary to H2N4403
• High Power Dissipation : 625 mW at 25°C
• High DC Current Gain : 100-300 at 150mA
• High Breakdown Voltage : 40 V Min.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150 °C
Junction Temp e rature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).............................................................................................625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage .................................................................................................... 60 V
VCEO Collector to Emitter Voltage................................................................................................. 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=100uA, IE=0
BVCEO 40 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, IC=0
ICEX - - 100 nA VCE=35V, VBE=0.4V
*VCE(sat)1 - - 400 mV IC=150mA, IB=15mA
*VCE(sat)2 - - 750 mV IC=500mA, IB=50mA
*VBE(sat)1 750 - 950 mV IC=150mA, IB=15mA
*VBE(sat)2 - - 1.2 V IC=500mA, IB=50mA
*hFE1 20 - - VCE=1V, IC=0.1mA
*hFE2 40 - - VCE=1V, IC=1mA
*hFE3 80 - - VCE=1V, IC =10mA
*hFE4 100 - 300 VCE=1V, IC=150mA
*hFE5 40 - - VCE=2V, IC =500mA
fT 250 - - MHz VCE=10V, IC=20mA, f=100MHz
Cob - - 6.5 pF VCB=5V, IE=0, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE4
Rank A B
Range 100-210 190-300
H2N4401 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 2/4
1000
Current Gain & Collector Current
125oC
100
hFE
1000
10
25oC
75oC
hFE @ VCE=1V
1 10 100 1000
Collect o r Current- IC (mA)
Sat urati on Voltage & Collector Cu rrent
@ IC=10I
B
CE(sat)
V
1000
hFE @ VCE=2V
125oC
100
hFE
10
1 10 100 1000
25oC
75oC
Collector Current- IC (mA)
Sat uration Voltage & Collect or Cur rent
1000
25oC
75oC
Cur rent G ain & C o llector Current
100
Saturat ion Volta ge ( m V)
10
0.1 1 10 100 1000
125oC
Collector Current- IC (mA)
75oC
25oC
Capacitance & Rev erse-Biased Volta ge
100
10
Capacitance (pF)
Cob
125oC
BE(sat)
V
Saturation Voltage (mV)
100
0.1 1 10 100 1000
1000
100
Cutoff Fr equen cy ( M Hz)...
Cut off Fr equency & Collector Current
Collector Current- IC (mA)
VCE=10V
@ IC=10I
B
1
0.1 1 10 100
Reverse Biased Volt age ( V)
10
1 10 100 1000
Collector Curren t (m A)
H2N4401 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 3/4
10000
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
1
1 10 100
Forwar d Biased o l t a ge- VCE( V )
(mA)
C
Colleto r Current- I
1000
100
10
700
PD-Ta
600
500
400
300
200
Power Dissipation-PD (mW)
100
0
0 50 100 150 200
Ambient Temper a t ure-Ta (oC)
H2N4401 HSMC Product Specification
Page 4
HI-SINCERITY
g
A
MICROELECTRONICS CORP.
TO-92 Dimension
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 4/4
A
α2
B
31
2
Marking:
HN
2
440
1
Date Code Control Code
Rank
α3
C
D
H
I
α1
G
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
DIM
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code:
DIM
α1
α2
α3
*: Typical
Min. Max. Min. Max.
-
-
-
*5°
*2°
*2°
-
-
-
*5°
*2°
*2°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H2N4401 HSMC Product Specification
Loading...