Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 1/3
H2N3417
NPN SILICON TRANSISTOR
Description
The H2N3417 is a silicon NPN planar epitaxial transistor designed
for small signal general purpose and switching applications.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage........................................................................................ 50 V
VCEO Collector to Emitter Voltage..................................................................................... 50 V
VEBO Emitter to Base Voltage............................................................................................. 5 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 50 - - V IC=100uA, IE=0
BVCEO 50 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 100 nA VCB=50V, IE=0
IEBO - - 100 nA VEB=5V, IC=0
*VCE(sat) - - 300 mV IB=3mA, IC=50mA
*VBE(sat) - - 850 mV IB=3mA, IC=50mA
*hFE 180 - 540 - VCE=4.5V, IC=2mA
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6267-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000
Current Gain & Collector Current
hFE @ VCE=4.5V
Collector Curren t ( mA)
Capacit an ce & R everse-Biased Volt age
100
10000
1000
BE(sat)
V
@ IC=50/3I
100
Saturation Voltage (mV)
10
0.1 1 10 100 1000
Collector Current (mA)
CE(sat)
V
B
@ IC=50/3I
Sa fe Operati ng Area
10000
PT=1ms
Saturation Volt age & Col lector C urren t
PT=100ms
PT=1s
(mA)
C
1000
B
10
Capac itance (pF)
1
0.1 1 10 100
Cob
Reverse- Biased Vol tage (V)
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
100
Collector Current-I
10
1
1 10 100
Forwar d Voltage- VCE (V)
0
0 20 40 60 80 100 120 140 160
Ambient Tem p er at ure- Ta(oC)
HSMC Product Specification
Page 3
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6267-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 3/3
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Base 3.Collec tor
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches M illimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H -
C 0.5000 - 12.70 - I D 0 .0142 0.0220 0.36 0.56
E-*0.0500 -
1.27
*
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
1
α
2
α
3
α
-
-
-
0.1000 -
*
0.0500 -
*
5
°
*
2
°
*
2
°
*
-
-
-
*:Typical
2.54
*
1.27
*
5
°
*
2
°
*
2
°
*
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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