Datasheet H1N5819, H1N5818, H1N5817 Datasheet (HSMC)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HL200101 Issued Date : 2000.01.15 Revised Date : 2001.12.06 Page No. : 1/3
H1N5817
1.0 AMP. SCHOTTKY BARRIER RECTIFIERS
H1N5819
Features
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Maximum Ratings
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Type Number H1N5817 H1N5818 H1N5819 Units
Maximum Recurrent Peak Reverse Voltage 20 30 40 V Maximum RMS Voltage 14 21 28 V Maximum DC Blocking Voltage 20 30 40 V Maximum Average Forward Rectified Current
0.375"(9.5mm) Lead Length @ TL=90°C
1A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage @ 1A 0.45 0.550 0.600 V Maximum Instantaneous Forward Voltage @ 3A 0.750 0.875 0.900 V
Maximum DC Reverse Current At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1) RθJA Typical Junction Capacitance (Note 2) 110 pF
Operating Temperature Range Tj -65 to +125 Storage Temperature Range TSTG -65 to +125
Note 1: Thermal resistance from junction to ambient vertical PC Board Mounting, 0.375”(9.5mm ) lead length. Note 2: Measured at 1Mhz and applied reverse voltage of 4V D.C.
1 (@ Ta=25°C)
10 (@ Ta=100°C)
25 A
50
°C /W
mA mA
°C °C
H1N5817, H1N5818, H1N5819 HSMC Product Specification
HI-SINCERITY
)
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HL200101 Issued Date : 2000.01.15 Revised Date : 2001.12.06 Page No. : 2/3
1.00
0.75
0.50
0.25
Average Forwar d Cur r ent (A
0.00
100
.
10
Fig.1 - Maximum Forw ar d Cu r r en t Derating Cu r ve
0 25 50 75 100 125 150 175
Lead Temperature (oC)
Fig.3 - T ypical Fo r w ard Characteristics
H1N5817
H1N5818,H1N5819
1000
100
Capacitance (p F)
10
0.1 1 10 100
Fig.4 - Maximum Non-R epetitive Forward Surge Current
30
25
20
15
Fig.2 - Ty pical Jun ct ion Capactitance
Rev erse Vol t age (V)
8.3ms Single Half Sine Wave JIDIC Method
1
Tj=25oC
Inst ant a neous For war d Cur r ent (A)
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
Forward Solt age ( V)
Pulse Width=300us 1% Duty Cycle
10
Peak Forward Surge Current (A
5
0
1 10 100
Number Of Cycles At 60Hz
H1N5817, H1N5818, H1N5819 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
DO-41 Dimension
A
Spec. No. : HL200101 Issued Date : 2000.01.15 Revised Date : 2001.12.06 Page No. : 3/3
E
DIM
B
DO-41 Molded Plastic Package
HSMC Package Code: L
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
C
DIM
D
Min. Max. Min. Max. A 0.0280 0.0340 0.71 0.86 D 1.0000 - 25.40 ­B 1.0000 - 25.40 - E 0.0800 0.1070 2.00 2.70 C 0.1600 0.2050 4.10 5.20
Notes: 1.Dimension and tolerance based on our Spec. dated May 28,1998.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
*: Typical
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Fac tory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
H1N5817, H1N5818, H1N5819 HSMC Product Specification
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