The H11NX-M series has a high speed integrated circuit detector optically
coupled to an AlGaAs infrared emitting diode. The output incorporates a
Schmitt trigger, which provides hysteresis for noise immunity and pulse s
haping. The detector circuit is optimized for simplicity of operation and utilizes
an open collector output for maximum application flexibility.
SCHEMATIC
1
ANODE
CATHODE
2
3
Truth Table
InputOutput
HL
LH
V
6
CC
5GND
V
4
O
FEATURES
• High data rate, 5 MHz typical (NRZ)
•Free from latch up and oscilliation throughout voltage and temperature ranges.
• Microprocessor compatible drive
• Logic compatible output sinks 16 mA at 0.5 V maximum
• Guaranteed on/off threshold hysteresis
• Wide supply voltage capability, compatible with all popular logic systems
• High common mode transient immunity, 2000 V/µs minimum
DC CharacteristicsTest ConditionsSymbolDeviceMinTyp*MaxUnits
I
Supply Current
Output Voltage, low
Tu r n-On Threshold Current
Tu r n-Off Threshold Current
Hysteresis Ratio
= 10mA, V
F
R
=270 Ω ,V
L
R
=270 Ω , V
L
note 1
R
=270 Ω , V
L
R
=270 Ω , V
L
AC CharacteristicsTest ConditionsSymbolDeviceMinTypMaxUnits
= 5VI
CC
=5V, I
=I
CC
CC
CC
CC
F
= 5V
= 5VI
= 5VI
max.V
F(on)
CC(on)
I
F(off)
OL
F(on)
F(off)
/I
All6.510mA
All0.5V
H11N1-M0.83.2
H11N3-M4.110
All0.3mA
F(on)
All0.650.95
mAH11N2-M2.35
SWITCHING SPEED
Propagation delay time
High to Low
Rise Time
Propagation delay time
Low to High
Fall time
C=120pF, t
Fig. 1
C=120pF, t
Fig. 1
C=120pF, t
Fig. 1
C=120pF, t
Fig. 1
=1µs, R
P
=1µs, R
P
=1µs, R
P
=1µs, R
P
: Note 2
E
: Note 2
E
: Note 2
E
: Note 2
E
t
PHL
t
PLH
All100330ns
t
r
All7.5ns
All150330ns
t
f
All12ns
Data RateAll5MHz
ISOLATION CHARACTERISTICS
ParametersTest ConditionsSymbolMinTyp*MaxUnits
Input-Output Isolation Voltagef = 60 Hz, t =1 sec.
V
Isolation Capacitance
Isolation Resistance
*Typical values at T
= 25°C
A
= 0V, f = 1 MHzC
I-O
V
= ±500 VDCR
I-O
V
ISO
ISO
ISO
7500
11
10
0.40.6pF
NOTES:
1. Maximum I
is the maximum current required to trigger the output. For example, a 3.2mA maximum trigger current would
F(ON)
require the LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band is
recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.