Datasheet H11G2M Specification

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

December 2014

H11G1M, H11G2M 6-Pin DIP High Voltage Photodarlington Optocouplers

Features

High BV

■

– 100 V Minimum for H11G1M – 80 V Minimum for H11G2M High Sensitivity to Low Input Current

■

(Minimum 500% CTR at I Low Leakage Current at Elevated Temperature

■

(Maximum 100 µA at 80°C)

■

Safety and Regulatory Approvals: – UL1577, 4,170 VAC – DIN-EN/IEC60747-5-5, 850 V Peak Working

Insulation Voltage

CEO

:

= 1 mA)

F

for 1 Minute

RMS

General Description

The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

Applications

CMOS Logic Interface

■

Telephone Ring Detector

■

Low Input TTL Interface Power Supply Isolation

■

Replace Pulse Transformer

Schematic Package Outlines

ANODE

CATHODE

1

2

3

N/C

Figure 1. Schematic

BASE

6

COLLECTOR

5

4

EMITTER

Figure 2. Package Outlines

≥

Safety and Insulation Ratings

As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Parameter Characteristics

Installation Classiﬁcations per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage

< 150 V

< 300 V

RMS

Climatic Classiﬁcation 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

Input-to-Output Test Voltage, Method A, V

V

PR

IORM

IOTM

Type and Sample Test with t

Input-to-Output Test Voltage, Method B, V 100% Production Test with t

Maximum Working Insulation Voltage 850 V

Highest Allowable Over-Voltage 6000 V

= 10 s, Partial Discharge < 5 pC

m

= 1 s, Partial Discharge < 5 pC

m

External Creepage

External Clearance

External Clearance (for Option TV, 0.4" Lead Spacing)

DTI Distance Through Insulation (Insulation Thickness)

(1)

S

, V

= 500 V

IO

T

S

I

S,INPUT

P

S,OUTPUT

R

IO

Case Temperature

Input Current

Output Power

Insulation Resistance at T

Note:

1. Safety limit values – maximum values allowed in the event of a failure.

IORM

(1)

x 1.6 = V

PR

x 1.875 = V

,

PR

1360 V

,

1594 V

> 10

I–IV

peak

7mm

10 mm

0.5 mm

175 °C

350 mA

800 mW

9

Ω

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Unit

TOTAL DEVICE

T

STG

T

OPR

T

J

T

SOL

P

D

EMITTER

I

F

V

R

I

(pk) Forward Current – Peak (1 µs pulse, 300 pps) 3.0 A

F

P

D

DETECTOR

V

CEO

P

D

Storage Temperature -40 to +125 °C

Operating Temperature -40 to +100 °C

Junction Temperature -40 to +125 ºC

Lead Solder Temperature 260 for 10 seconds °C

Total Device Power Dissipation @ T

= 25°C 290 mW

A

Derate Above 25°C 3.5 mW/°C

Forward Input Current 60 mA

Reverse Input Voltage 6.0 V

LED Power Dissipation @ T

= 25°C 90 mW

A

Derate Above 25°C 1.8 mW/°C

Collector-Emitter Voltage

H11G1M 100 V

H11G2M 80 V

Photodetector Power Dissipation @ T

= 25°C 200 mW

A

Derate Above 25°C 2.67 mW/°C

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

Δ

Electrical Characteristics

T

= 25°C unless otherwise specified.

A

Individual Component Characteristics

Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit

EMITTER

V

BV

C

I

DETECTOR

BV

I

CEO

Forward Voltage I

F

V

Forward Voltage

F

Temperature Coefﬁcient

T

A

Reverse Breakdown

R

Voltage

Junction Capacitance

J

Reverse Leakage

R

Current

Breakdown Voltage

CEO

Collector to Emitter

Collector to Base I

CBO

Emitter to Base All 7 10 V

EBO

Leakage Current Collector to Emitter

= 10 mA All 1.3 1.5 V

F

All -1.8 mV/°C

I

= 10 µA All 3.0 25 V

R

= 0 V, f = 1 MHz

V

F

V

= 1 V, f = 1 MHz 65

F

V

= 3.0V All 0.001 10 µA

R

I

= 1.0 mA, I

C

= 100 µA

C

V

= 80 V, I

CE

= 60 V, I

V

CE

V

= 80 V, I

CE

V

= 60 V, I

CE

= 0

F

= 0 H11G1M 100 nA

F

= 0 H11G2M 100 nA

F

= 0, T

F

= 80°C H11G1M 100 µA

A

= 0, T

= 80°C H11G2M 100 µA

A

All

H11G1M 100 V

H11G2M 80 V

H11G1M 100 V

H11G2M 80 V

50 pF

pF

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

Transfer Characteristics

Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit

EMITTER

100

(1000)

CTR

V

CE(SAT)

Current Transfer Ratio, Collector to Emitter

Saturation Voltage

= 10 mA, V

I

F

I

= 1 mA, V

F

I

= 16 mA, I

F

I

= 1 mA, I

F

= 1 V All

CE

= 5 V All 5 (500) mA (%)

CE

= 50 mA All 0.85 1.0 V

C

= 1 mA All 0.75 1.0 V

C

SWITCHING TIMES

t

ON

t

OFF

Turn-on Time R

Turn-off Time All 100 µs

= 100 Ω , I

L

V

= 5 V, f ≤ 30 Hz,

CE

= 10 mA,

F

Pulse Width ≤ 300 µs

All 5 µs

Isolation Characteristics

Symbol Characteristic Test Conditions Min. Typ. Max. Unit

V

C

R

Input-Output Isolation Voltage t = 1 Minute 4170 VAC

ISO

Isolation Capacitance V

ISO

Isolation Resistance V

ISO

= 0 V, f = 1 MHz 0.2 pF

I-O

= ±500 VDC, TA = 25°C 10

I-O

11

mA (%)

RMS

Ω

Typical Performance Curves

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

10

1

OUTPUT CURRENT

0.1

0.01

– NORMALIZED

C

I

0.001

0.1 1 10

IF – LED INPUT CURRENT(mA)

Figure 3. Output Current vs. Input Current

100

Normalized to:

= 5 V

V

CE

I

= 1 mA

F

= 25˚C

T

A

10

OUTPUT CURRENT

1

0.1

– NORMALIZED

C

I

0.01 110

IF = 50 mA

= 10 mA

I

F

I

= 2 mA

F

I

= 1 mA

F

I

= 0.5 mA

F

VCE – COLLECTOR – EMITTER VOLTAGE (V)

Figure 5. Output Current

vs. Collector-Emitter Voltage

Normalized to: V

= 5 V

CE

= 1 mA

I

F

100

Normalized to:

= 5 V

V

CE

= 1 mA

I

F

= 25˚C

T

10

1

0.1

– NORMALIZED OUTPUT CURRENT

C

I

0.01

-60 -40 -20 0 20 40 60 80 100 120

IF = 50mA

IF = 5mA

I

= 1mA

F

I

= 0.5mA

F

A

TA – AMBIENT TEMPERATURE (˚C)

Figure 4. Normalized Output Current

vs. Temperature

1000

= 80 V

V

100

10

1

VCE = 30 V

CE

= 1 0V

V

CE

– DARK CURRENT (nA)

CEO

0.1

I

0.01 0 102030405060708090 100

TA – AMBIENT TEMPERATURE (˚C)

Figure 6. Collector-Emitter Dark Current

vs. Ambient Temperature

10

(mA)

= 10 Ω

R

L

1

Normalized to:

– FORWARD CURRENT

F

I

= 5 V

V

CC

= 10 mA

I

F

R

= 100 Ω

L

0.1

0.1 1 10

ton + t

– TOTAL SWITCHING SPEED (NORMALIZED)

off

= 100 Ω

R

L

R

= 1 kΩ

L

Figure 7. Input Current vs. Total Switching Speed (Typical Values)

Reflow Profile

°C

300

280

260

240

220

200

180

160

140

120

100

80

60

40

20

0

0 60 180120 270

1.822°C/s Ramp-up rate

33 s

260°C

Time above

183°C = 90 s

Time (s)

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

> 245°C = 42 s

360

Figure 8. Reﬂow Proﬁle

Ordering Information

Part Number Package Packing Method

H11G1M DIP 6-Pin Tube (50 Units)

H11G1SM SMT 6-Pin (Lead Bend) Tube (50 Units)

H11G1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)

H11G1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)

H11G1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)

H11G1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)

H11G1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)

Note:

2. The product orderable part number system listed in this table also applies to the H11G2M device.

Marking Information

1

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

Table 1. Top Mark Deﬁnitions

1 Fairchild Logo

2 Device Number

3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)

4 One-Digit Year Code, e.g., “4”

5 Digit Work Week, Ranging from “01” to “53”

6 Assembly Package Code

H11G1

V X YY

43

Figure 9. Top Mark

2

Q

5

6

Package Dimensions

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

Figure 10. 6-pin DIP Through Hole

Package Dimensions (Continued)

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

Figure 11. 6-pin DIP Surface Mount

Package Dimensions (Continued)

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers

Figure 12. 6-pin DIP 0.4” Lead Spacing

H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers