Datasheet H11F3, H11F2, H11F1 Datasheet (Fairchild Semiconductor)

• ≥

≤

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

PACKAGE

ANODE

6

1

6

CATHODE

SCHEMATIC

1

2

OUTPUT

6

TERM.

5

1

OUTPUT

3

4

TERM.

6

1

DESCRIPTION

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo­detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

FEATURES

As a remote variable resistor

• ≤ 100 Ω to ≥ 300 M Ω

99.9% linearity

• ≤ 15 pF shunt capacitance

• ≥ 100 G Ω I/O isolation resistance

As an analog switch

• Extremely low offset voltage

• 60 V

• No charge injection or latch-up

•t

on

• UL recognized (File #E90700)

• VDE recognized (File #E94766)
– Ordering option ‘300’ (e.g. H11F1.300)

signal capability

pk-pk

, t

15 µS

off

APPLICATIONS

As a variable resistor –

• Isolated variable attenuator

• Automatic gain control

• Active filter fine tuning/band switching

As an analog switch –

• Isolated sample and hold circuit

• Multiplexed, optically isolated A/D conversion

© 2002 Fairchild Semiconductor Corporation

Page 1 of 9

6/24/02

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

Absolute Maximum Ratings

Parameter Symbol Device Value Units

TOTAL DEVICE

Storage Temperature T

Operating Temperature T

Lead Solder Temperature T

EMITTER

Continuous Forward Current I

Reverse Voltage V

Forward Current - Peak (10 µs pulse, 1% duty cycle) I

LED Power Dissipation 25°C Ambient

Derate Linearly From 25°C 1.33 mW/°C

DETECTOR

Detector Power Dissipation @ 25°C

Derate linearly from 25°C 4.0 mW/°C

Breakdown Voltage (either polarity) BV

Continuous Detector Current (either polarity) I

ELECTRICAL CHARACTERISTICS

(T

= 25°C unless otherwise specified)

A

STG

OPR

SOL

F

R

F(pk)

P

D

P

D

4-6

4-6

(T

= 25°C Unless otherwise specified.)

A

All -55 to +150 °C

All -55 to +100 °C

All 260 for 10 sec °C

All 60 mA

All 5 V

All 1 A

All

All

100 mW

300 mW

H11F1, H11F2 ±30 V

H11F3 ±15 V

All ±100 mA

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Device Min Typ* Max Unit

EMITTER

Input Forward Voltage I

Reverse Leakage Current V

Capacitance V = 0 V, f = 1.0 MHz C

OUTPUT DETECTOR

Breakdown Voltage
Either Polarity

Off-State Dark Current

V

4-6

Off-State Resistance V

Capacitance V

© 2002 Fairchild Semiconductor Corporation

4-6

= 16 mA V

F

= 5 V I

R

I

= 10µA, I

4-6

V

= 15 V, I

4-6

= 15 V, I

= 15 V, I

4-6

= 15 V, I

= 0 BV

F

= 0

F

= 0, T

F

= 100°C All 50 µA

A

= 0 R

F

= 0, f = 1MHz C

F

Page 2 of 9

F

R

J

All 1.3 1.75 V

All 10 µA

All 50 pF

H11F1, H11F2 30

4-6

I

4-6

4-6

4-6

H11F3 15

All 50 nA

All 300 M Ω

All 15 pF

6/24/02

V

Ω

Ω

Ω

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

ISOLATION CHARACTERISTICS

Parameter Test Conditions Symbol Min Typ* Max Units

Input-Output Isolation Voltage f = 60Hz, t = 1 min. V

Isolation Resistance V

Isolation Capacitance V

TRANSFER CHARACTERISTICS

= 500 VDC R

I-O

= 0, f = 1.0 MHz C

I-O

(T

= 25°C Unless otherwise specified.)

A

ISO

ISO

ISO

5300 Vac (rms)

11

10

2pF

DC Characteristics Test Conditions Symbol Device Min Typ* Max Units

H11F1 200

On-State Resistance I

= 16 mA, I

F

= 100 µA R

4-6

4-6

H11F2 330

H11F3 470

H11F1 200

On-State Resistance I

= 16 mA, I

F

= 100 µA R

6-4

6-4

H11F2 330

H11F3 470

Resistance, non-linearity
and assymetry

= 16mA, I

I

F

= 25 µA RMS,

4-6

f = 1kHz

All 0.1 %

AC Characteristics Test Conditions Symbol Device Min Typ* Max Units

Turn-On Time R

Turn-Off Time R

= 50 Ω , I

L

= 50 Ω , I

L

= 16mA, V

F

= 16mA, V

F

= 5V t

4-6

= 5V t

4-6

on

off

All 25 µS

All 25 µS

© 2002 Fairchild Semiconductor Corporation

Page 3 of 9

6/24/02

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

Figure 1. Resistance vs. Input Current

10

1

r(on) - Normalized Resistance

Normalized to:
I

= 16 mA

F

= 5 µA RMS

I

46

0.1
1 10 100

- INPUT CURRENT - mA

I

F

Figure 3. LED Forward Voltage vs. Forward Current

2.0

1.8

1.6

1.4

TA = -55°C

Figure 2. Output Characteristics

800

600

400

200

= 2mA

I

F

0

= 6mA

I

-200

- OUTPUT CURRENT (µA)

-400

46

I

-600

-800

F

= 10mA

I

F

= 14mA

I

F

= 18mA

I

F

-0.2 -0.1 0.0

- OUTPUT VOLTAGE (V)

V

46

I

= 18mA

F

I

= 14mA

F

I

= 10mA

F

= 6mA

I

F

I

= 2mA

F

0.1 0.2

Figure 4. Off-state Current vs. Ambient Temperature

10000

NORMALIZED TO:

= 15V

V

46

= 0mA

I

F

= 25°C

T

A

1000

100

1.2

- FORWARD VOLTAGE (V)

F

V

1.0

0.8

0.1 101 100

TA = 25°C

TA = 100°C

- LED FORWARD CURRENT - mA

I

F

Figure 5. Resistance vs. Temperature

0.8

0.6

r(on) - NORMALIZED RESISTANCE

0.4

3

2

Observed
Range

1

NORMALIZED TO

= 16mA

I

F

= 25µA RMS

I

4-6

= 25˚C

T

A

1K

-25-50 0 25 50 75 100

- AMBIENT TEMPERATURE - °C

T

A

Median

Device

10

- NORMALIZED DARK CURRENT

46

I

1

0 204060

- AMBIENT TEMPERATURE (°C)

T

A

Figure 6. Region of Linear Resistance

100

80

60

40

20

10

8

6

4

MAXIMUM RMS SIGNAL VOLTAGE - mV

­2

4-6

V

1

100 1000 10K 100K

MAXIMUM
RMS
VOLTAGE

MAXIMUM
RMS
CURRENT

r(on) RESISTANCE - Ω

80 100

100
80

60

40

20

10
8

6

4

2

MAXIMUM RMS SIGNAL CURRENT - µA

-

4-6

I

© 2002 Fairchild Semiconductor Corporation

Page 4 of 9

6/24/02

PHOTO FET OPTOCOUPLERS

Figure 7. Resistive non-linearity vs. D.C. Bias

5

4

3

2

1

∆r(on) - CHANGE IN RESISTANCE – %

I

= 10 µA RMS

4-6

r(on) = 200 Ω

H11F1 H11F2 H11F3

0

1 50 100 150 200 250 300 350

- D.C. BIAS VOLTAGE - mA

V

4-6

© 2002 Fairchild Semiconductor Corporation

Page 5 of 9

6/24/02

TYPICAL APPLICATIONS

AS A VARIABLE RESISTOR AS AN ANALOG SIGNAL SWITCH

ISOLATED VARIABLE ATTENUATORS

500K

500K

H11F1

≤ 30mA

F

V

OUT

V

IN

I

F

LOW FREQUENCY HIGH FREQUENCY

DYNAMIC RANGE ≈ 70db

@10KHz

FOR 0 ≤ I

V

IN

H11F1

I

F

DYNAMIC RANGE ≈ 50db

@1MHz

FOR 0 ≤ IF ≤ 30mA

Distortion free attenuation of low level A.C. signals is accom­plished by varying the IRED current, I
range and absence of coupling capacitors; D.C. level shifting or

Note the wide dynamic

F

parasitic feedback to the controlling function.

AUTOMATIC GAIN CONTROL

V

IN

H11F1

I

F

AGC

SIGNAL

+

-

500K

V

50Ω

OUT

V

OUT

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

ISOLATED SAMPLE AND HOLD CIRCUIT

+

-

V

IN

H11F1

I

F

C

Accuracy and range are improved over conventional FET
switches because the H11F has no charge injection from the
control signal. The H11F also provides switching of either
polarity input signal up to 30V magnitude.

MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION

H11F1

V

1

V

2

V

n

CONVERTER

H11F1

MSB

A/D

H74A1

LSB

V

H74A1

OUT

V

V

OUT

CALL V1

MSB

DATA

LSB

IN

I

F

INPUT

t

DATA

ACQUISITION

PROCESS
CONTROL

LOGIC

SYSTEM

CALL

V

n

This simple circuit provides over 70db of stable gain control for
an AGC signal range of from 0 to 30mA. This basic circuit can
be used to provide programmable fade and attack for electronic
music.

ACTIVE FILTER FINE TUNING/BAND SWITCHING

I

F1

A1

I

ADJUSTS f1, IF2 ADJUSTS f

F1

H11F1

2

I

F2

A2

H11F1

A3

The linearity of resistance and the low offset voltage of the
H11F allows the remote tuning or band-switching of active
filters without switching glitches or distortion. This schematic
illustrates the concept, with current to the H11F1 IRED’s
controlling the filter’s transfer characteristic.

© 2002 Fairchild Semiconductor Corporation

The optical isolation, linearity and low offset voltage of the
H11F allows the remote multiplexing of low level analog signals
from such transducers as thermocouplers, Hall effect devices,
strain gauges, etc. to a single A/D converter.

TEST EQUIPMENT - KELVIN CONTACT POLARITY

I

TEST

DEVICE

UNDER

TEST

H11F1

I

F

I

F

H11F1

H11F1

I

F

AC

PARAMETER

SENSING

BOARD

B

D

I

F

H11F1

A & B FOR

POLARITY 1

C & D FOR

POLARITY 2

In many test equipment designs the auto polarity function uses
reed relay contacts to switch the Kelvin Contact polarity. These
reeds are normally one of the highest maintenance cost items
due to sticking contacts and mechanical problems. The totally
solid-State H11F eliminates these troubles while providing
faster switching.

Page 6 of 9

I

TO

F

6/24/02

PHOTO FET OPTOCOUPLERS

)

)

)

)

)

)

H11F1 H11F2 H11F3

Package Dimensions (Through Hole) Package Dimensions (Surface Mount)

0.350 (8.89)

0.330 (8.38)

3

2

5

4

0.070 (1.78)

0.045 (1.14)

Lead Coplanarity : 0.004 (0.10) MAX

1

6

PIN 1
ID.

0.020 (0.51)
MIN

0.100 (2.54)

TYP

0.270 (6.86)

0.240 (6.10)

0.300 (7.62)
TYP

0.016 (0.40) MIN

0.315 (8.00)
MIN

0.405 (10.30)
MAX

0.070 (1.78)

0.045 (1.14)

SEATING PLANE

0.200 (5.08)

0.135 (3.43)

0.154 (3.90)

0.100 (2.54)

0.022 (0.56)

0.016 (0.41)

0.100 (2.54)
TYP

0.350 (8.89)

0.330 (8.38)

PIN 1
ID.

0.270 (6.86)

0.240 (6.10)

0.020 (0.51)
MIN

0.016 (0.40)

0.008 (0.20)

0° to 15°

0.300 (7.62)
TYP

0.200 (5.08)

0.165 (4.18)

0.022 (0.56)

0.016 (0.41)

Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for

Surface Mount Leadform

0.016 (0.41)

0.008 (0.20)

0.270 (6.86)

0.240 (6.10)

0.350 (8.89)

0.330 (8.38)

0.070 (1.78)

0.045 (1.14)

0.200 (5.08)

0.135 (3.43)

SEATING PLANE

0.154 (3.90)

0.100 (2.54)

0.022 (0.56)

0.016 (0.41)

0.004 (0.10)
MIN

0.100 (2.54) TYP

NOTE

All dimensions are in inches (millimeters)

© 2002 Fairchild Semiconductor Corporation

0.016 (0.40)

0.008 (0.20)

0.400 (10.16)
TYP

0° to 15°

Page 7 of 9

0.415 (10.54

0.100 (2.54

0.295 (7.49

0.070 (1.78

0.060 (1.52

0.030 (0.76

6/24/02

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

ORDERING INFORMATION

Option Order Entry Identifier Description

S .S Surface Mount Lead Bend

SD .SD Surface Mount; Tape and Reel

W .W 0.4" Lead Spacing

300 .300 VDE 0884

300W .300W VDE 0884, 0.4" Lead Spacing

3S .3S VDE 0884, Surface Mount

3SD .3SD VDE 0884, Surface Mount, Tape and Reel

Carrier Tape Specifications

4.85 ± 0.20

0.30 ± 0.05

13.2 ± 0.2

0.1 MAX

User Direction of Feed

NOTE

All dimensions are in inches (millimeters)

Tape and reel quantity is 1,000 units per reel

4.0 ± 0.1

10.30 ± 0.20

12.0 ± 0.1

4.0 ± 0.1

1.55 ± 0.05

Ø

1.75 ± 0.10

7.5 ± 0.1

9.55 ± 0.20

Ø

1.6 ± 0.1

16.0 ± 0.3

© 2002 Fairchild Semiconductor Corporation

Page 8 of 9

6/24/02

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

© 2002 Fairchild Semiconductor Corporation

Page 9 of 9

6/24/02