Datasheet H11D4, H11D2, H11D1, 4N38 Datasheet (Fairchild Semiconductor)

Parameter Symbol Value Units

TOTAL DEVICE

T

STG

-55 to +150 °C

Storage Temperature
Operating Temperature T

OPR

-55 to +100 °C

Lead Solder Temperature T

SOL

260 for 10 sec °C

Total Device Power Dissipation @ TA= 25°C

P

D

260 mW

Derate above 25°C 3.5 mW/°C

EMITTER

I

F

80 mA

*Forward DC Current
*Reverse Input Voltage V

R

6.0 V
*Forward Current - Peak (1µs pulse, 300pps) IF(pk) 3.0 A
*LED Power Dissipation @ TA= 25°C

P

D

150 mW

Derate above 25°C 1.41 mW/°C

FEATURES

• High Voltage

- H11D1, H11D2, BV

CER

= 300 V

- H11D3, H11D4, BV

CER

= 200 V

• High isolation voltage

- 5300 VAC RMS - 1 minute

- 7500 VAC PEAK - 1 minute

• Underwriters Laboratory (UL) recognized File# E90700

DESCRIPTION

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

8/9/00 200046A

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1
H11D2
H11D3
H11D4

4N38

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls

ABSOLUTE MAXIMUM RATINGS

ANODE

1

BASE

6

CATHODE

2

COLLECTOR

5

N/C

3

4

EMITTER

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

Notes

* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T

A

= 25°C

ELECTRICAL CHARACTERISTICS

(TA= 25°CUnless otherwise specified.)

Characteristic Test Conditions Symbol Device Min Typ** Max Unit

EMITTER

(I

F

= 10 mA) V

F

ALL 1.15 1.5 V

*Forward Voltage

Forward Voltage Temp. !V

F

ALL -1.8 mV/°C

Coefficient !T

A

Reverse Breakdown Voltage (IR= 10 µA) BV

R

ALL 6 25 V

Junction Capacitance

(V

F

= 0 V, f = 1 MHz)

C

J

ALL 50 pF

(VF= 1 V, f = 1 MHz) ALL 65 pF

*Reverse Leakage Current (VR= 6 V) I

R

ALL 0.05 10 µA

DETECTOR (RBE= 1 M")

BV

CER

H11D1/2 300

*Breakdown Voltage (IC= 1.0 mA, IF= 0) H11D3/4 200

Collector to Emitter (No RBE) (IC= 1.0 mA) BV

CEO

4N38 80

H11D1/2 300

V

*Collector to Base (IC= 100 µA, IF= 0) BV

CBO

H11D3/4 200

4N38 80

Emitter to Base

(I

E

= 100 µA , IF= 0)

BV

EBO

4N38 7

Emitter to Collector BV

ECO

ALL 7 10

(VCE= 200 V, IF= 0, TA= 25°C)

H11D1/2

100 nA

*Leakage Current (VCE= 200 V, IF= 0, TA= 100°C)

I

CER

250 µA

Collector to Emitter (VCE= 100 V, IF= 0, TA= 25°C)

H11D3/4

100 nA

(RBE= 1 M")(V

CE

= 100 V, IF= 0, TA= 100°C) 250 µA

(No RBE) (VCE= 60 V, IF= 0, TA= 25°C) I

CEO

4N38 50 nA

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Symbol Value Units

DETECTOR

300 mW

*Power Dissipation @ T

A

= 25°CP

D

Derate linearly above 25°C 4.0 mW/°C

H11D1 - H11D2 300

*Collector to Emitter Voltage H11D3 - H11D4 V

CER

200

4N38 80

H11D1 - H11D2 300

V

*Collector Base Voltage H11D3 - H11D4 V

CBO

200

4N38 80

*Emitter to Collector Voltage

H11D1 - H11D2

V

ECO

7

H11D3 - H11D4

Collector Current (Continuous) 100 mA

ABSOLUTE MAXIMUM RATINGS (Cont.)

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit

EMITTER H11D1

Current Transfer Ratio

(I

F

= 10 mA, VCE= 10 V) H11D2 2 (20)

Collector to Emitter

(R

BE

= 1 M") CTR H11D3 mA (%)

H11D4 1 (10)

(I

F

= 10 mA, VCE= 10 V) 4N38 2 (20)

(IF= 10 mA, IC= 0.5 mA)

H11D1/2/3/4 0.1 0.40

*Saturation Voltage (R

BE

= 1 M")V

CE (SAT)

V

(IF= 20 mA, IC= 4 mA) 4N38 1.0

TRANSFER CHARACTERISTICS

Characteristic Test Conditions Symbol Device Min Typ** Max Unit

SWITCHING TIMES

(V

CE

=10 V, ICE= 2 mA) t

on

ALL 5

Non-Saturated Turn-on Time µs
Turn-off Time (RL= 100 ") t

off

ALL 5

TRANSFER CHARACTERISTICS

Characteristic Test Conditions Symbol Device Min Typ** Max Unit

Isolation Voltage (I

I-O

#$1 µA, 1 min.) V

ISO

ALL

5300 (V

AC

RMS)

7500 (V

AC

PEAK)

Isolation Resistance (V

I-O

= 500 VDC) R

ISO

ALL 10

11

"

Isolation Capacitance (f = 1 MHz) C

ISO

ALL 0.5 pF

ISOLATION CHARACTERISTICS

Notes

* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at TA= 25°C

Fig.1 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

- FORWARD VOLTAGE (V)

F

1.2

V

1.1

1.0
1 10 100

IF - LED FORWARDCURRENT (mA)

TA = 55˚C

TA = 25˚C

TA = 100˚C

Fig.2 Normalized Output Characteristics

10

1

- OUTPUT CURRENT

CER

0.1

0.01

NORMALIZED I

0.1 1 10 100

Normalized to:
V

= 10 V

CE

= 10 mA

I

F

= 106 Ω

R

BE

= 25˚C

T

IF = 50 mA

IF = 10 mA

IF = 5 mA

VCE - COLLECTOR VOLTAGE (V)

A

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

Fig.3 Normalized Output Current vs. LED Input Current

10

Normalized to:

= 10 V

V

CE

I

= 10 mA

F

= 106 Ω

R

BE

= 25˚C

T

A

1

- OUTPUT CURRENT

CER

0.1

NORMALIZED I

0.01

110

IF - LED INPUT CURRENT (mA)

Fig.5 Normalized Dark Current vs. Ambient Temperature

Normalized to:

= 100 V

10000

1000

- DARK CURRENT

CER

NORMALIZED I

V

CE

= 106 Ω

R

BE

= 25˚C

T

A

VCE = 300 V

100

10

1

0.1

VCE = 100 V

VCE = 50 V

10 20 30 40 50 60 70 80 90 100 110

TA - AMBIENT TEMPERATURE (˚C)

Fig.4 Normalized Output Current vs. Temperature

Normalized to:

= 10 V

V

CE

= 10 mA

I

F

= 106 Ω

R

BE

T

A

= 25˚C

1

- OUTPUT CURRENT

CER

IF = 20 mA

IF = 10 mA

IF = 5 mA

NORMALIZED I

0.1

-60 -40 -20 0 20 40 60 80 100

TA - AMBIENT TEMPERATURE (˚C)

Normalized Collector-Base Current vs. Temperature

10

9

8

IF = 50 mA

7

6

5

4

- COLLECTOR-BASE CURRENT

3

CBO

IF = 10 mA

2

1

IF = 5 mA

0

-60 -40 -20 0 20 40 60 80 100

NORMALIZED I

TA - AMBIENT TEMPERATURE (˚C)

Normalized to:

= 10 V

V

CE

= 10 mA

I

F

= 106 Ω

R

BE

= 25˚C

T

A

Lead Coplanarity : 0.004 (0.10) MAX

0.270 (6.86)

0.240 (6.10)

0.350 (8.89)

0.330 (8.38)

0.300 (7.62)
TYP

0.405 (10.30)
MAX

0.315 (8.00)
MIN

0.016 (0.40) MIN

2

5

PIN 1
ID.

0.016 (0.41)

0.008 (0.20)

0.100 (2.54)
TYP

0.022 (0.56)

0.016 (0.41)

0.070 (1.78)

0.045 (1.14)

0.200 (5.08)

0.165 (4.18)

4

3

0.020 (0.51)

MIN

1

6

0.100 (2.54)
TYP

0.020 (0.51)
MIN

0.350 (8.89)

0.330 (8.38)

0.270 (6.86)

0.240 (6.10)

PIN 1

ID.

0.022 (0.56)

0.016 (0.41)

0.070 (1.78)

0.045 (1.14)

0.200 (5.08)

0.135 (3.43)

0.300 (7.62)
TYP

0° to 15°

0.154 (3.90)

0.100 (2.54)

SEATING PLANE

0.016 (0.40)

0.008 (0.20)

321

456

SEATING PLANE

0.016 (0.40)

0.008 (0.20)

0.070 (1.78)

0.045 (1.14)

0.350 (8.89)

0.330 (8.38)

0.154 (3.90)

0.100 (2.54)

0.200 (5.08)

0.135 (3.43)

0.004 (0.10)
MIN

0.270 (6.86)

0.240 (6.10)

0.400 (10.16)
TYP

0° to 15°

0.022 (0.56)

0.016 (0.41)

0.100 (2.54) TYP

3

PIN 1
ID.

21

456

NOTE

All dimensions are in inches (millimeters)

0.070 (1.78)

0.060 (1.52)

0.030 (0.76)

0.100 (2.54)

0.295 (7.49)

0.415 (10.54)

Package Dimensions (Surface Mount)Package Dimensions (Through Hole)

Package Dimensions (0.4”Lead Spacing) Recommended Pad Layout for

Surface Mount Leadform

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

S .S Surface Mount Lead Bend
SD .SD Surface Mount; Tape and reel
W .W 0.4” Lead Spacing
300 .300 VDE 0884
300W .300W VDE 0884, 0.4” Lead Spacing
3S .3S VDE 0884, Surface Mount
3SD .3SD VDE 0884, Surface Mount, Tape & Reel

Option

Order Entry Identifier

Description

4.0 ± 0.1

Ø1.55 ± 0.05

User Direction of Feed

4.0 ± 0.1

1.75 ± 0.10

7.5 ± 0.1

16.0 ± 0.3

12.0 ± 0.1

0.30 ± 0.05

13.2 ± 0.2

4.85 ± 0.20

0.1 MAX

10.30 ± 0.20

9.55 ± 0.20

Ø1.6 ± 0.1

QT Carrier Tape Specifications (“D” Taping Orientation)

ORDERING INFORMATION

NOTE

All dimensions are in millimeters

8/9/00 200046A

H11D1, H11D2, H11D3, H11D4, 4N38

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

8/9/00 200046A

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com © 2000 Fairchild Semiconductor Corporation