Datasheet H11D3M Specification

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

December 2014

4N38M, H11D1M, H11D3M, MOC8204M 6-Pin DIP High Voltage Phototransistor Optocouplers

Features

High Voltage:

■

– MOC8204M, BV – H11D1M, BV – H11D3M, BV Safety and Regulatory Approvals:

■

– UL1577, 4,170 VAC DIN-EN/IEC60747-5-5, 850 V Peak Working

■

Insulation Voltage

CEO

= 400 V

CEO

= 300 V = 200 V

RMS

for 1 Minute

Description

The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Applications

■

Power Supply Regulators

■

Digital Logic Inputs Microprocessor Inputs

■

Appliance Sensor Systems Industrial Controls

■

Schematic Package Outlines

ANODE

CATHODE

1

2

3

N/C

Figure 1. Schematic

BASE

6

COLLECTOR

5

4

EMITTER

Figure 2. Package Outlines

≥

Safety and Insulation Ratings

As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Parameter Characteristics

Installation Classiﬁcations per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage

< 150 V

< 300 V

RMS

Climatic Classiﬁcation 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

Input-to-Output Test Voltage, Method A, V

V

PR

IORM

IOTM

Type and Sample Test with t

Input-to-Output Test Voltage, Method B, V 100% Production Test with t

Maximum Working Insulation Voltage 850 V

Highest Allowable Over-Voltage 6000 V

= 10 s, Partial Discharge < 5 pC

m

= 1 s, Partial Discharge < 5 pC

m

External Creepage

External Clearance

External Clearance (for Option TV, 0.4" Lead Spacing)

DTI Distance Through Insulation (Insulation Thickness)

(1)

S

, V

= 500 V

IO

T

S

I

S,INPUT

P

S,OUTPUT

R

IO

Case Temperature

Input Current

Output Power

Insulation Resistance at T

Note:

1. Safety limit values – maximum values allowed in the event of a failure.

IORM

(1)

x 1.6 = V

PR

x 1.875 = V

,

PR

1360 V

,

1594 V

> 10

I–IV

peak

7mm

10 mm

0.5 mm

175 °C

350 mA

800 mW

9

Ω

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Device Value Unit

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

D

EMITTER

I

F

V

R

I

(pk)

F

P

D

DETECTOR

P

D

V

CEO

V

CBO

V

ECO

I

C

Note:

2. Parameters meet or exceed JEDEC registered data (for 4N38M only).

Storage Temperature All -40 to +125 °C

Operating Temperature All -40 to +100 °C

Junction Temperature All -40 to +125 ºC

J

Lead Solder Temperature All 260 for 10 seconds °C

Total Device Power Dissipation @ T

= 25°C

A

All

420 mW

Derate Above 25°C 3.5 mW/°C

Forward DC Current

Reverse Input Voltage

Forward Current – Peak (1 µs pulse, 300pps)

LED Power Dissipation @ T

(2)

= 25°C

A

(2)

Derate Above 25°C 1.41 mW/°C

Power Dissipation @ T

= 25°C

A

Derate linearly above 25°C 4.0 mW/°C

All 80 mA

All 6.0 V

All 3.0 A

All

120 mW

300 mW

MOC8204M 400 V

Collector to Emitter Voltage

(2)

H11D1M 300 V

H11D3M 200 V

4N38M 80 V

MOC8204M 400 V

Collector Base Voltage

(2)

H11D1M 300 V

H11D3M 200 V

4N38M 80 V

H11D1M, H11D3M,

7V

Emitter to Collector Voltage

(2)

MOC8204M

Collector Current (Continuous) All 100 mA

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Δ

Electrical Characteristics

T

= 25°C unless otherwise specified.

A

Individual Component Characteristics

Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit

EMITTER

V

BV

C

I

Forward Voltage

F

V

Forward Voltage

F

Temperature Coefﬁcient

T

A

Reverse Breakdown Voltage I

R

Junction Capacitance

J

Reverse Leakage Current

R

DETECTOR

BV

Breakdown Voltage

CEO

Collector-to-Emitter

Collector to Base

CBO

Emitter to Base I

EBO

Emitter to Collector I

ECO

Leakage Current

I

CEO

Collector to Emitter (R

= 1 M Ω )

BE

Note:

3. Parameters meet or exceed JEDEC registered data (for 4N38M only).

(3)

I

= 10 mA All 1.15 1.50 V

F

All -1.8 mV/°C

= 10 µA All 6 25 V

R

= 0 V, f = 1 MHz

V

F

V

= 1 V, f = 1 MHz 65 pF

F

(3)

V

= 6 V All 0.05 10 µA

R

All

50 pF

MOC8204M 400 V

R

= 1 M Ω ,

BE

I

= 1.0 mA, I

C

No RBE, I

= 0

F

= 1.0 mA 4N38M 80

C

H11D1M 300

H11D3M 200

MOC8204M 400 V

I

= 100 µA, I

C

F

= 0

H11D1M 300

H11D3M 200 V

4N38M 80 V

= 100 µA, I

E

= 100 µA, I

E

V

= 300 V, I

CE

T

= 25°C

A

V

= 300 V, I

CE

T

= 100°C

A

V

= 200V, I

CE

T

= 25°C

A

= 200 V, IF = 0,

V

CE

T

= 100°C

A

= 100 V, IF = 0,

V

CE

T

= 25°C

A

= 100 V, IF = 0,

V

CE

T

= 100°C

A

No R

BE

I

= 0, TA = 25°C

F

= 0 4N38M 7 V

F

= 0 All 7 10 V

F

= 0,

F

= 0,

F

= 0,

F

MOC8204M

H11D1M

H11D3M

, VCE = 60 V,

4N38M 50 nA

100 nA

250 µA

100 nA

250 µA

100 nA

250 µA

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

V

Electrical Characteristics (Continued)

= 25°C unless otherwise specified.

T

A

Transfer Characteristics

Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit

EMITTER

I

= 10 mA, VCE = 10 V,

F

R

= 1 MΩ

BE

= 10 mA, VCE = 10 V 4N38M 2 (20) mA (%)

I

F

CTR

Current Transfer Ratio, Collector-to-Emitter

IF = 10 mA, IC = 0.5 mA,

(4)

R

V

CE(SAT)

Saturation Voltage

= 1 MΩ

BE

= 20 mA, IC = 4 mA 4N38M 1.0 V

I

F

SWITCHING TIMES

t

OFF

Non-Saturated

ON

Turn-on Time

Turn-off Time All 5 µs

V

= 10 V, IC = 2 mA,

CE

= 100 Ω

R

L

Note:

4. Parameters meet or exceed JEDEC registered data (for 4N38M only).

H11D1M, H11D3M,

MOC8204M

H11D1M, H11D3M,

MOC8204M

All 5 µs

2 (20) mA (%)

0.1 0.4 V

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Isolation Characteristics

Symbol Characteristic Test Conditions Min. Typ. Max. Unit

V

C

R

Input-Output Isolation Voltage t = 1 Minute 4170 VAC

ISO

Isolation Capacitance V

ISO

Isolation Resistance V

ISO

= 0 V, f = 1 MHz 0.2 pF

I-O

= ±500 VDC, TA = 25°C 10

I-O

11

RMS

Ω

Typical Performance Curves

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

1.8

1.7

1.6

1.5

1.4

1.3

– FORWARD VOLTAGE (V)

F

1.2

V

1.1

1.0 1 10 100

T

A

T

A

T

A

= -55˚C

= 25˚C

= 100˚C

IF – LED FORWARDCURRENT (mA)

Figure 3. LED Forward Voltage

vs. Forward Current

10

Normalized to: V

= 10 V

RENT

– OUTPUT CUR

C

CE

= 10 mA

I

F

R

= 106 Ω

BE

T

= 25˚C

A

1

0.1

Normalized to: V

= 10 V

CE

I

= 10 mA

F

= 106 Ω

10

1

– OUTPUT CURRENT

C

0.1

NORMALIZED I

0.01

0.1 1 10 100

IF = 50 mA

I

= 10 mA

F

IF = 5 mA

R T

BE

= 25˚C

A

VCE – COLLECTOR VOLTAGE (V)

Figure 4. Normalized Output Characteristics

I

= 20 mA

F

I

= 10 mA

1

– OUTPUT CURRENT

C

F

I

F

= 5 mA

Normalized to: V

= 10 V

CE

I

= 10 mA

F

R

= 106 Ω

BE

= 25˚C

T

A

NORMALIZED I

0.01 110

IF – LED INPUT CURRENT (mA)

Figure 5. Normalized Output Current

vs. LED Input Current

Normalized to: V

= 100 V

100

CE

R

= 106 Ω

BE

= 25˚C

T

A

= 100 V

V

CE

10

V

= 50 V

1

CE

V

= 300 V

CE

10000

1000

– DARK CURRENT

CEO

NORMALIZED I

0.1 10 20 30 40 50 60 70 80 90 100 110

TA – AMBIENT TEMPERATURE (˚C)

Figure 7. Normalized Dark Current

vs. Ambient Temperature

NORMALIZED I

0.1

-60 -40 -20 0 20 40 60 80 100

TA – AMBIENT TEMPERATURE (˚C)

Figure 6. Normalized Output Current

vs. Temperature

10

9

8

I

= 50 mA

F

7

6

5

4

– COLLECTOR-BASE CURRENT

3

CBO

2

1

0

-60 -40 -20 0 20 40 60 80 100

NORMALIZED I

= 5 mA

I

F

I

= 10 mA

F

TA – AMBIENT TEMPERATURE (˚C)

Normalized to:

= 10 V

V

CE

I

= 10 mA

F

R

= 106 Ω

BE

T

= 25˚C

A

Figure 8. Normalized Collector-Base Current

vs. Temperature

Reflow Profile

°C

300

280

260

240

220

200

180

160

140

120

100

80

60

40

20

0

0 60 180120 270

1.822°C/s Ramp-up rate

33 s

260°C

Time above

183°C = 90 s

Time (s)

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

> 245°C = 42 s

360

Figure 9. Reﬂow Proﬁle

Ordering Information

Part Number Package Packing Method

H11D1M DIP 6-Pin Tube (50 Units)

H11D1SM SMT 6-Pin (Lead Bend) Tube (50 Units)

H11D1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)

H11D1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)

H11D1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)

H11D1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)

H11D1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)

Note:

2. The product orderable part number system listed in this table also applies to the 4N38M, H11D3M, and MOC8204M devices.

Marking Information

1

4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers

Table 1. Top Mark Deﬁnitions

1 Fairchild Logo

2 Device Number

3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)

4 One-Digit Year Code, e.g., “4”

5 Digit Work Week, Ranging from “01” to “53”

6 Assembly Package Code

H11D1

V X YY Q

43

Figure 10. 12. Top Mark

5

2

6

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I77

Mouser Electronics

Authorized Distributor

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